EP-4709088-A3 - SEMICONDUCTOR DEVICE INCLUDING DIFFERENT TYPES OF FIELD-EFFECT TRANSISTOR
EP4709088A3EP 4709088 A3EP4709088 A3EP 4709088A3EP-4709088-A3
Abstract
Provided is a semiconductor device which includes: a 1 st transistor structure including a 1 st n-type field-effect transistor, NFET, and a 1 st p-type field-effect transistor, PFET, vertically thereabove, the 1 st NFET having a greater channel width than the 1 st PFET; and a 2 nd transistor structure including a 2 nd PFET and a 2 nd NFET vertically thereabove, the 2 nd PFET having a greater channel width than the 2 nd NFET.
Inventors
- CHO, EDWARD NAMKYU
- Park, Kibyung
- SEO, JUNHO
- SEO, KANG-ILL
Assignees
- Samsung Electronics Co., Ltd.
Dates
- Publication Date
- 20260513
- Application Date
- 20250825