EP-4722806-A3 - REFLECTIVE MASK BLANK AND METHOD FOR MANUFACTURING REFLECTIVE MASK BLANK
EP4722806A3EP 4722806 A3EP4722806 A3EP 4722806A3EP-4722806-A3
Abstract
A reflective mask blank used in EUV lithography using EUV light as exposure light comprising at least a substrate 10; a multilayer reflective film 50 that is formed on the substrate 10 and reflects exposure light; and a multilayer film 200 containing tantalum (Ta). The multilayer film 200 has a TaN part 210, a TaO part 230, and a Ta part 220 provided between the TaN part 210 and the TaO part 230. A density of the Ta part 220 is higher than densities of the TaN part 210 and the TaO part 230. The density of the Ta part 220 is 13 g/cm 3 or more.
Inventors
- KOSAKA, TAKURO
- INAZUKI, YUKIO
- OGOSE, Taiga
Assignees
- SHIN-ETSU CHEMICAL CO., LTD.
Dates
- Publication Date
- 20260506
- Application Date
- 20251002