EP-4730951-A3 - TUNGSTEN GATES FOR NON-PLANAR TRANSISTORS
EP4730951A3EP 4730951 A3EP4730951 A3EP 4730951A3EP-4730951-A3
Abstract
The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium -containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.
Inventors
- PRADHAN, Sameer S.
- BERGSTROM, DANIEL B.
- CHUN, Jin-Sung
- CHIU, Julia
Assignees
- Sony Group Corporation
Dates
- Publication Date
- 20260506
- Application Date
- 20110930