EP-4735951-A1 - TUNING AND CONTROL OF CRYSTAL DEFECT EMISSIONS
Abstract
An optoelectronic device, comprises: a substrate; an optical waveguide on the substrate; a pair of Bragg reflectors formed in the waveguide to define a resonant cavity between the reflectors; a piezoelectric material on the substrate in proximity to the waveguide; and electrodes configured to apply an electric field to the piezoelectric material so as to tune a wavelength of light emitted from the cavity. A quantum computing device, comprises: a crystalline material comprising a crystal defect; one or more doped layers in the crystalline material over the defect in proximity to the defect; a surface carrier donor material on a surface of the crystalline material over the one or more doped layers in proximity to the defect; an electrode over the surface carrier donor material in proximity to the defect; and control circuitry, which is configured to apply a voltage to the electrode to control a state of the defect.
Inventors
- TORDJMAN, MOSHE
- SHERMAN, ALEXANDER
- BAYN, IGAL
Assignees
- Quantum Transistors Technology Ltd.
Dates
- Publication Date
- 20260506
- Application Date
- 20240204
Claims (20)
- 1. An optoelectronic device, comprising: a substrate; an optical waveguide disposed on the substrate; a pair of Bragg reflectors formed in the optical waveguide to define a resonant cavity between the Bragg reflectors; a piezoelectric material disposed on the substrate in proximity to the optical waveguide; and electrodes configured to apply an electric field to the piezoelectric material so as to tune a wavelength of light emitted from the resonant cavity.
- 2. The device according to claim 1, wherein the optical waveguide comprises a crystalline material containing a crystal defect, and wherein application of the electric field to the piezoelectric material tunes the wavelength of the light emitted from the crystal defect due to a phonon strain modification.
- 3. The device according to claim 2, wherein the crystalline material comprises diamond, and wherein the crystal defect comprises a nitrogen vacancy (NV) defect.
- 4. The device according to any of claims 1-3, wherein the piezoelectric material is configured as a membrane, which extends across the resonant cavity.
- 5. The device according to claim 4, wherein the piezoelectric material comprises a ferroelectric perovskite.
- 6. The device according to claim 5, wherein the optical waveguide comprises diamond, and the piezoelectric material comprises barium titanate (BTO).
- 7. The device according to any of claims 1-3, wherein the piezoelectric material is embedded in the optical waveguide.
- 8. The device according to claim 7, wherein the piezoelectric material is embedded within the cavity.
- 9. The device according to claim 7, wherein the piezoelectric material is interleaved within at least one of the Bragg reflectors.
- 10. The device according to claim 7, wherein the piezoelectric material and the optical waveguide comprise crystalline materials.
- 11. The device according to claim 10, wherein the piezoelectric material comprises a ferroelectric perovskite.
- 12. The device according to claim 11, wherein the optical waveguide comprises diamond, and the piezoelectric material comprises barium titanate (BTO).
- 13. A method for optical control, comprising: forming an optical waveguide on a substrate including a pair of Bragg reflectors formed in the optical waveguide to define a resonant cavity between the Bragg reflectors; depositing a piezoelectric material on the substrate in proximity to the optical waveguide; and applying an electric field to the piezoelectric material so as to tune a wavelength of light emitted from the resonant cavity.
- 14. The method according to claim 13, wherein the optical waveguide comprises a crystalline material containing a crystal defect, and wherein applying the electric field comprises tuning the wavelength of the light emitted from the crystal defect using a phonon strain modification.
- 15. The method according to claim 14, wherein the crystalline material comprises diamond, and wherein the crystal defect comprises a nitrogen vacancy (NV) defect.
- 16. The method according to any of claims 13-15, wherein depositing the piezoelectric material comprises forming a membrane, which extends across the resonant cavity.
- 17. The method according to claim 16, wherein the piezoelectric material comprises a ferroelectric perovskite.
- 18. The method according to claim 17, wherein the optical waveguide comprises diamond, and the piezoelectric material comprises barium titanate (BTO).
- 19. The method according to any of claims 13-15, wherein depositing the piezoelectric material comprises embedding the piezoelectric material in the optical waveguide.
- 20. The method according to claim 19, wherein embedding the piezoelectric material comprises depositing the piezoelectric material within the cavity.
Description
TUNING AND CONTROL OF CRYSTAL DEFECT EMISSIONS FIELD The present invention relates generally to integrated photonic devices, and particularly to photonic devices for use in quantum computing. BACKGROUND Ferroelectric perovskites are a family of crystalline materials exhibiting ABO3 structure. They have various useful properties, including strong dielectric, ferroelectric, piezoelectric, and electro-optic effects. Members of the family include strontium titanate (SrTiOs), barium titanate (BaTiOs, also referred to as BTO), lead titanate (PbTiOs), barium strontium titanate (BST), lead zirconate titanate (PZT), potassium niobate (KNbOs), and lithium niobate (LiNbOa). The terms “light” and “optical radiation” are used herein synonymously to refer to electromagnetic radiation in any of the visible, ultraviolet, and infrared spectral ranges. SUMMARY Embodiments of the present invention that are described hereinbelow provide integrated photonic devices and methods for their use. There is therefore provided, in accordance with an embodiment of the invention, an optoelectronic device, including a substrate and an optical waveguide disposed on the substrate. A pair of Bragg reflectors is formed in the optical waveguide to define a resonant cavity between the Bragg reflectors. A piezoelectric material is disposed on the substrate in proximity to the optical waveguide. Electrodes are configured to apply an electric field to the piezoelectric material so as to tune a wavelength of light emitted from the resonant cavity. In some embodiments, the optical waveguide includes a crystalline material containing a crystal defect, and application of the electric field to the piezoelectric material tunes the wavelength of the light emitted from the crystal defect due to a phonon strain modification. In a disclosed embodiment, the crystalline material includes diamond, and wherein the crystal defect includes a nitrogen vacancy (NV) defect. Additionally or alternatively, the piezoelectric material is configured as a membrane, which extends across the resonant cavity. In some embodiments, the piezoelectric material includes a ferroelectric perovskite. In one embodiment, the optical waveguide includes diamond, and the piezoelectric material includes barium titanate (BTO). In other embodiments, the piezoelectric material is embedded in the optical waveguide. In one embodiment, the piezoelectric material is embedded within the cavity. Alternatively or additionally, the piezoelectric material is interleaved within at least one of the Bragg reflectors. In some embodiments, the piezoelectric material and the optical waveguide include crystalline materials, such as a ferroelectric perovskite. In a disclosed embodiment, the optical waveguide includes diamond, and the piezoelectric material includes barium titanate (BTO). There is also provided, in accordance with an embodiment of the invention, a method for optical control, which includes forming an optical waveguide on a substrate including a pair of Bragg reflectors formed in the optical waveguide to define a resonant cavity between the Bragg reflectors. A piezoelectric material is deposited on the substrate in proximity to the optical waveguide. An electric field is applied to the piezoelectric material so as to tune a wavelength of light emitted from the resonant cavity. There is additionally provided, in accordance with an embodiment of the invention, a quantum computing device, which includes a crystalline material including a crystal defect and one or more doped layers in the crystalline material over the crystal defect in proximity to the crystal defect. A surface carrier donor material is disposed on a surface of the crystalline material over the one or more doped layers in proximity to the crystal defect, and an electrode is disposed over the surface carrier donor material in proximity to the crystal defect. Control circuitry is configured to apply a voltage to the electrode to control a state of the crystal defect. In some embodiments, the one or more doped layers include a P-type layer and may further include an N-type layer disposed over the P-type layer. In a disclosed embodiment, the surface carrier donor material includes an electron acceptor material, such as barium titanate (BTO). The crystalline material may include diamond. Additionally or alternatively, the control circuitry is configured to apply the voltage so as to switch the crystal defect between a ground state and an excited state. In a disclosed embodiment, the crystalline material includes diamond, and the crystal defect includes a nitrogen vacancy (NV) defect. In some embodiments, the surface carrier donor material includes barium titanate (BTO). In a disclosed embodiment, application of the voltage causes the BTO to create a two-dimensional hole gas over the crystal defect. There is further provided, in accordance with an embodiment of the invention, a method for quantum computing, which includes providing a