EP-4736220-A1 - SEMICONDUCTOR MANUFACTURING SOURCE PRECURSOR DELIVERY SYSTEM

Abstract

A delivery system for delivering a vaporized source precursor in ion implantation, including: an assembly including: a vessel having an interior volume and configured to produce the vaporized source precursor; a first heater to heat the vessel; and a manifold configured to control the output of the vaporized source precursor to an ion implantation device, wherein the assembly is configured to be disposed upstream of the source inlet flange.

Inventors

• GUAN, Weihang
• BAROLLI, Sanado
• TANG, YING
• JONES, EDWARD E.
• MURTHI, Kavita R.
• KAY, Sharona R.

Assignees

• Entegris, Inc.

Dates

Publication Date

20260506

Application Date

20240625

Claims (20)

1. 1. A delivery system for delivering a vaporized source precursor in ion implantation, comprising: an assembly comprising: a vessel having an interior volume and configured to produce the vaporized source precursor; a first heater to heat the vessel; and a manifold configured to control the output of the vaporized source precursor to an ion implantation device, wherein the assembly is configured to be disposed upstream of the source inlet flange.
2. 2. The delivery system of claim 1, wherein the first heater is configured to provide sufficient energy to the interior volume of the vessel to vaporize the source precursor.
3. 3. The delivery system of claim 1, wherein the manifold is heated.
4. 4. The delivery system of claim 1, wherein the source precursor comprises liquid or solid-phase metal halides, organometallic solids, or combinations thereof.
5. 5. The delivery system of claim 1, wherein the manifold includes a housing, wherein the housing is a block of material including one or more channels formed therein.
6. 6. The delivery system of claim 5, wherein the housing comprises: a flow control device; and a pressure sensing device, and wherein the flow control device and the pressure sensing device are configured to provide a flow rate of the vaporized source precursor from the manifold.
7. 7. The delivery system of claim 6, further comprising: a thermal control system connected in electronic communication with the flow control device, and/or the pressure sensing device, wherein the thermal control system is configured to adjust output of the heating component.
8. 8. The delivery system of claim 1, further comprising a first conduit fluidly connecting the vessel and the manifold and a second conduit configured to be fluidly connected to the ion implantation device.
9. 9. The delivery system of claim 8, further comprising a second heater applied to the first conduit and a third heater applied to the second conduit.
10. 10. The delivery system of claim 1, wherein the delivery system is disposed within a gas box.
11. 11. The delivery system of claim 1, wherein the vessel further comprises a valve, wherein the valve is configured to be controlled to operate between a flow enabled state and a flow disabled state.
12. 12. The delivery system of claim 1, further comprising of an additional vessel connected to the manifold to allow the delivery of precursor material from the additional vessel.
13. 13. The delivery system of claim 12, configured to automatically switch over to the additional vessel.
14. 14. The delivery system of claim 12, configured to deliver a different precursor through the same manifold.
15. 15. The delivery system of claim 1, wherein the vessel further comprises an identifying component and the delivery system further comprises an identifier for the identifying component.
16. 16. An ion implantation system comprising: an ion implantation device; a gas box connected in fluid communication with the ion implantation device, the gas box configured to deliver a vaporized source precursor to the ion implantation device; a delivery system disposed in the gas box, wherein the delivery system is configured to provide the vaporized source precursor to the ion implantation device, comprising: an assembly comprising: a vessel having an interior volume and configured to produce the vaporized source precursor; a first heater to heat the vessel; and a manifold configured to control the output of the vaporized source precursor to an ion implantation device, wherein the assembly is configured to be disposed upstream of the source inlet flange.
17. 17. The ion implantation system of claim 16, wherein the source precursor is aluminum trichloride (AICI3).
18. 18. The ion implantation system of claim 16, wherein the ion implantation system further comprises a valve, wherein the valve is configured to be controlled to operate between a flow enabled state and a flow disabled state.
19. 19. The ion implantation system of claim 16, wherein the manifold includes a housing, wherein the temperature of the housing is controlled to achieve the vapor pressure required to obtain a desired flowrate.
20. 20. The ion implantation system of claim 19, wherein the housing further comprises: a flow control device a pressure sensing device and wherein the flow control device and the pressure sensing device are configured to provide a flow rate of the vaporized source precursor from the manifold.

Description

SEMICONDUCTOR MANUFACTURING SOURCE PRECURSOR DEEIVERY SYSTEM FIELD [0001] This disclosure relates generally to semiconductor manufacturing. More particularly, this disclosure relates to delivery of a liquid or solid precursor for semiconductor manufacturing equipment such as an ion implantation device. CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This application claims the benefit under 35 USC 119 of U.S. Provisional Patent Application No. 63/523,638, filed Jun. 27, 2023, the disclosure of which is hereby incorporated herein by reference in its entirety. BACKGROUND [0003] Vaporizers for liquid or solid precursors generally leverage conductive heating from metallic vessel surfaces to the liquid or solid precursor. To disperse heat through the liquid or solid precursor, an internal structure can be utilized to provide thermal pathways for the heat. SUMMARY [0004] In some embodiments, a delivery system includes a vessel. In some embodiments, the vessel includes an interior volume. In some embodiments, the vessel is configured to hold a source precursor. In some embodiments, a thermal control system surrounds the vessel and is configured to heat or cool the vessel. In some embodiments, the delivery system includes a manifold. In some embodiments, the manifold is configured to be heated or cooled. In some embodiments, the manifold is configured to output a vaporized source precursor. [0005] In some embodiments, a delivery system for delivering a vaporized source precursor in ion implantation includes an assembly. In some embodiments, the assembly includes a vessel having an interior volume and configured to produce the vaporized source precursor. In some embodiments, the assembly includes a thermal control system surrounding at least a portion of the vessel. In some embodiments, the assembly includes a manifold configured to control output of the vaporized source precursor to an ion implantation device. In some embodiments, the assembly is dimensioned to be disposed in a gas box connected to the ion implantation device. [0006] In some embodiments, the thermal control system is configured to provide sufficient energy to the interior volume of the vessel to vaporize the source precursor. In one embodiment, the thermal control system includes a controller and a heater. In some embodiments, the thermal control system includes a controller and a plurality of heaters. The thermal control system may include multiple controllers and multiple heaters. The thermal control system may include a cooler to cool components of the system. [0007] In some embodiments, the delivery system includes the source precursor. In some embodiments, the source precursor includes solid or liquid-phase metal halides, organometallic compounds, or combinations thereof, or other metal containing compounds. [0008] In some embodiments, the manifold includes a housing. In some embodiments, the housing includes: a plurality of remotely controllable valves; a flow control device; and a pressure transducer. In some embodiments, the flow control device and the pressure transducer are configured to control the plurality of remotely controllable valves to provide a set flow rate of the vaporized source precursor from the manifold. In some embodiments, the flow control device includes a valve. In some embodiments, the flow control device includes a mass flow controller. In various embodiments, pressure sensing devices include a pressure sensor, a temperature sensor, a pressure transducer, etc. [0009] In some embodiments, the delivery system includes a thermal control system connected in electronic communication with a flow control device e.g., a Mass Flow Controller, and the pressure transducer. In some embodiments, the thermal control system is configured to adjust an output of the heating components based on a value received from a mass flow controller or a pressure transducer. [0010] In some embodiments, the delivery system includes a conduit fluidly connecting the vessel and the manifold. In some embodiments, the conduit is heated with a heater. The heater may be a heating jacket, fire rods, a heat pad, a radiation heater, an oven, heat tape, etc. [0011] In some embodiments, the delivery system is configured to be disposed upstream of the source inlet flange, such as in the high voltage terminal and/or gas box. [0012] In some embodiments, the vessel further includes a pneumatic valve. In some embodiments, the pneumatic valve is configured to be remotely controlled to operate between a flow enabled state and a flow disabled state. [0013] In some embodiments, a system includes a delivery system. In some embodiments, the delivery system includes a vessel. In some embodiments, the vessel includes an interior volume. In some embodiments, the vessel is configured to hold a source precursor. In some embodiments, a heater surrounds the vessel and is configured to heat the vessel. In some embodiments, a manifold is configured to be heated. In some embod