EP-4736223-A1 - CONDUCTIVE MATERIALS FOR DIRECT BONDING

Abstract

A structure includes a first substrate including a first layer having at least one electrically conductive first portion and at least one electrically insulative second portion and a second substrate including a second layer having at least one electrically conductive third portion and at least one electrically insulative fourth portion. The structure further includes an interface layer having at least one electrically conductive oxide material between the first layer and the second layer. The at least one electrically conductive oxide material includes at least one first region between and in electrical communication with the at least one electrically conductive first portion and the at least one electrically conductive third portion, and at least one second region between the at least one electrically insulative second portion and the at least one electrically insulative fourth portion.

Inventors

• THEIL, JEREMY, ALFRED
• UZOH, CYPRIAN, EMEKA
• GAO, GUILIAN
• HABA, BELGACEM
• MIRKARIMI, LAURA, WILLS

Assignees

• Adeia Semiconductor Bonding Technologies Inc.

Dates

Publication Date

20260506

Application Date

20240514

Claims (20)

1. 1. A structure comprising: a first substrate comprising a first layer having at least one electrically conductive first portion and at least one electrically insulative second portion; a second substrate comprising a second layer having at least one electrically conductive third portion and at least one electrically insulative fourth portion; and an interface layer between the first layer and the second layer, the interface layer comprising at least one electrically conductive oxide material, the at least one electrically conductive oxide material comprising: at least one first region between and in electrical communication with the at least one electrically conductive first portion and the at least one electrically conductive third portion; and at least one second region between the at least one electrically insulative second portion and the at least one electrically insulative fourth portion, the at least one second region electrically isolated from the at least one first region.
2. 2. The structure of claim 1, wherein the at least one electrically conductive oxide material is optically transparent.
3. 3. The structure of claim 2, wherein the at least one electrically conductive oxide material comprises indium tin oxide or zinc oxide.
4. 4. The structure of claim 1, wherein the at least one electrically conductive oxide material comprises a first electrically conductive oxide material on the first layer and a second electrically conductive oxide material on the second layer, the first electrically conductive oxide material directly bonded to the second electrically conductive oxide material.
5. 5. The structure of claim 1, wherein the at least one electrically conductive first portion and/or the at least one electrically conductive third portion is selected from the group consisting of: copper, tungsten, cobalt, or zinc oxide.
6. 6. The structure of claim 1, wherein the at least one electrically insulative second portion and/or the at least one electrically insulative fourth portion is selected from the group consisting of: silicon oxide, silicon nitride, copper nitride, and titanium nitride.
7. 7. The structure of claim 1 , wherein the at least one first region is electrically isolated from the at least one second region.
8. 8. The structure of claim 7, wherein a portion of the at least one electrically conductive oxide material at a periphery of the first and second substrates hermetically seals a second portion of the at least one electrically conductive oxide material from an ambient environment.
9. 9. The structure of claim 7, further comprising gaps between the at least one first region and the at least one second region.
10. 10. The structure of claim 9, wherein the at least one electrically conductive oxide material is not embedded within the at least one electrically insulative second portion and/or the at least one electrically insulative fourth portion.
11. 11. The structure of claim 7, wherein the interface layer further comprises at least one solid dielectric material between the at least one first region and the at least one second region.
12. 12. The structure of claim 11, wherein the at least one electrically conductive oxide material is embedded within the at least one electrically insulative second portion and/or the at least one electrically insulative fourth portion.
13. 13. The structure of claim 11, wherein the at least one solid dielectric material comprises silicon oxycarbonitride.
14. 14. The structure of claim 11, wherein a portion of the at least one solid dielectric material at a periphery of the first and second substrates hermetically seals the at least one first region and the at least one second region from an ambient environment.
15. 15. The structure of claim 14, wherein the at least one solid dielectric material substantially surrounds the at least one first region and the at least one second region.
16. 16. The structure of claim 11, wherein the at least one electrically conductive oxide material is embedded in the at least one solid dielectric material.
17. 17. A structure comprising: a first substrate having a first conductive feature comprising a first region of a first deposited electrically conductive oxide material; and a second substrate having a second conductive feature directly bonded to the first conductive feature.
18. 18. The structure of claim 17, wherein the first substrate comprises a first layer having at least one electrically conductive first portion and at least one electrically insulative second portion, the first region of the first deposited electrically conductive oxide material over and in electrical communication with the at least one electrically conductive first portion.
19. 19. The structure of claim 18, wherein a second region of the first deposited electrically conductive oxide material is over the at least one electrically insulative second portion.
20. 20. The structure of claim 19, wherein the second region of the first deposited electrically conductive oxide layer is directly bonded to at least a portion of the second deposited electrically conductive oxide material.

Description

CONDUCTIVE MATERIALS FOR DIRECT BONDING BACKGROUND Field [0001] The field relates to systems and methods for wafer-to-wafer, die-to-die, and/or die-to-wafer hybrid bonding for semiconductor devices and optoelectronic devices. Description of the Related Art [0002] Semiconductor elements, such as semiconductor wafers or integrated device dies, can be stacked and directly bonded to one another without an adhesive, thereby forming a bonded structure. Nonconductive (e.g., dielectric; semiconductor) surfaces can be made extremely smooth and treated to enhance direct, covalent bonding, even at room temperature and without application of pressure beyond contact. In some hybrid bonded structures, nonconductive field regions of the elements can be directly bonded to one another, and corresponding conductive contact structures can be directly bonded to one another. [0003] For example, a semiconductor element can be mounted to a carrier, such as a package substrate, an interposer, a reconstituted wafer or element, a flat panel, a glass, etc. A semiconductor element can be stacked on top of the semiconductor element (e.g., a first integrated device die can be stacked on a second integrated device die). Each of the semiconductor elements can have conductive pads for mechanically and electrically bonding the semiconductor elements to one another with the conductive pads mechanically and electrically bonded to one another. SUMMARY [0004] Certain implementations described herein provide a structure comprising a first substrate comprising a first layer having at least one electrically conductive first portion and at least one electrically insulative second portion. The structure further comprises a second substrate comprising a second layer having at least one electrically conductive third portion and at least one electrically insulative fourth portion. The structure further comprises an interface layer between the first layer and the second layer. The interface layer comprises at least one electrically conductive oxide material. The at least one electrically conductive oxide material comprises at least one first region between and in electrical communication with the at least one electrically conductive first portion and the at least one electrically conductive third portion. The at least one electrically conductive oxide material further comprises at least one second region between the at least one electrically insulative second portion and the at least one electrically insulative fourth portion. The at least one second region is electrically isolated from the at least one first region. [0005] Certain implementations described herein provide a structure comprising a first substrate having a first conductive feature comprising a first region of a first deposited electrically conductive oxide material. The structure further comprises a second substrate having a second conductive feature directly bonded to the first conductive feature. [0006] Certain implementations described herein provide a method comprising providing a first substrate and a second substrate each comprising one or more electrically conductive surface portions and one or more electrically insulative surface portions. At least one of the first substrate and the second substrate further comprises an electrically conductive oxide layer having a first region over and in electrical communication with the one or more electrically conductive surface portions and a second region over the one or more electrically insulative surface portions. The second region is electrically isolated from the first region. The method further comprises directly bonding the first substrate and the second substrate with one another without an intervening adhesive. Said directly bonding the first substrate and the second substrate comprises contacting the first substrate and the second substrate with one another with the electrically conductive oxide layer therebetween. [0007] Certain implementations described herein provide a method comprising providing a first substrate having a first patterned conductive contact feature. The first patterned conductive contact feature comprises a first region of a first electrically conductive oxide material. The method further comprises providing a second substrate having a second conductive contact feature. The method further comprises directly bonding the first conductive contact feature to the second conductive contact feature. [0008] Certain implementations described herein provide a method comprising providing a first patterned conductive contact feature in a first substrate. The method further comprises providing a second patterned conductive contact feature in a second substrate. The method further comprises directly bonding the first patterned conductive contact feature to the second patterned conductive contact feature. The first substrate and the second substrate are not activated after the first patterned conductive contact feature is p