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EP-4737461-A1 - NOVEL COMPOUND, PRECURSOR COMPOSITION COMPRISING SAME, AND METHOD FOR MANUFACTURING THIN FILM USING SAME

EP4737461A1EP 4737461 A1EP4737461 A1EP 4737461A1EP-4737461-A1

Abstract

The present invention relates to a vapor deposition compound capable of depositing a thin film through vapor deposition and, more specifically, to: a novel compound that can be applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and has excellent reactivity, volatility, and thermal stability; a precursor composition comprising the novel compound; and a method for manufacturing a thin film using the precursor composition.

Inventors

  • PARK, CHEOL-WAN
  • KIM, HYUN-KEE
  • SHIN, Ee-Seul
  • PARK, Kwan-Hyun
  • PARK, JUNG-WOO

Assignees

  • Hansol Chemical Co., Ltd

Dates

Publication Date
20260506
Application Date
20240627

Claims (9)

  1. A compound represented by Formula 1 below wherein in Formula 1, M is titanium (Ti), zirconium (Zr), or hafnium (Hf), R 1 to R 4 are each independently hydrogen, or a straight-chain or branched-chain hydrocarbon group having 1 to 6 carbon atoms, and R 5 to R 10 are each independently hydrogen, or a straight-chain or branched-chain hydrocarbon group having 1 to 4 carbon atoms.
  2. The compound of claim 1, wherein R 1 to R 4 are each independently any one selected from the group consisting of hydrogen, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group.
  3. The compound of claim 1, wherein R 5 to R 10 are each independently any one selected from the group consisting of a methyl group, an ethyl group, an n-propyl group, and an isopropyl group.
  4. The compound of claim 1, wherein the compound is represented by Formula 1-1, 1-2, or 1-3 below, wherein in Formulas 1-1, 1-2, and 1-3, M is titanium (Ti), zirconium (Zr), or hafnium (Hf).
  5. A precursor composition for vapor deposition, the precursor composition comprising the compound of any one of claims 1 to 4.
  6. A method of manufacturing a thin film, the method comprising: introducing the precursor composition of claim 5 into a chamber.
  7. The method of claim 6, wherein the method comprises atomic layer deposition (ALD) or chemical vapor deposition (CVD).
  8. The method of claim 6, further comprising: injecting at least one selected from hydrogen (H 2 ), an oxygen (O) atom-containing compound, a nitrogen (N) atom-containing compound, or a silicon (Si) atom-containing compound, as a reaction gas.
  9. The method of claim 8, wherein the reaction gas is at least one selected from hydrogen (H 2 ), water vapor (H 2 O), oxygen (O 2 ), ozone (O 3 ), nitrogen (N 2 ), ammonia (NH 3 ), hydrazine (N 2 H 4 ), or silane.

Description

Technical Field The present disclosure relates to a novel compound capable of thin film deposition through vapor deposition, a precursor composition including the novel compound, and a method of manufacturing a thin film using the precursor composition. Background Art With the increasing integration density and miniaturization of semiconductor devices, the formation of metal and metal oxide thin films having a uniform thickness has become increasingly important for applying such devices to various technologies, including microelectronics, magnetic information storage, and catalysts. To manufacture metal and metal oxide thin films, chemical vapor deposition (CVD) or atomic layer deposition (ALD) is used. In particular, ALD, a method in which reactants are sequentially injected into and removed from a chamber, enables the formation of desired thin films, facilitates control over composition, and allows for the formation of thin films with uniform thickness. In addition, ALD exhibits excellent step coverage and, therefore, is advantageous in that a thin film can be uniformly grown on a complex and sophisticated device. To manufacture a thin film through ALD, a precursor, which plays a key role, is required to have high volatility, high thermal stability, high reactivity in a chamber, and the like. Various ligands have been applied to date to develop precursors, and examples of representative known ligands include halogen, alkoxide, cyclopentadiene, beta-diketonate, amide, and amidinate. However, most of the known precursors are solid compounds, have low volatility or stability, or may cause problems, such as contamination by impurities generated during thin film deposition. Thus, there is a need to develop a novel precursor having excellent properties that can overcome the aforementioned disadvantages. In particular, although silicon dioxide (SiO2) has been used as the gate dielectric material of transistors to date, as the size of recent semiconductor devices has become smaller and smaller, problems such as tunneling current leakage and the resulting increase in power dissipation and heat generation have become serious. Accordingly, there is a growing demand for the development of a novel material having a high dielectric constant to replace the SiO2 dielectric. Group 4 metals, such as hafnium or zirconium, are being widely applied as high-k thin-film materials due to having relatively wide bandgap energy, high Si integration, and high compatibility. However, existing precursor materials used to prepare hafnium thin films or zirconium thin films have limitations in improving the growth rate per cycle, uniformity, flatness, purity, and the like of such thin films. Thus, there is a need for the development of improved precursors. [Documents of related art] [Patent Documents] (Patent Document 1) Korean Patent Application Publication No. 2011-0065383(Patent Document 2) Korean Patent Application Publication No. 2014-0029428 Disclosure Technical Problem The present disclosure aims to provide a novel Group 4 metal element-containing compound applicable to ALD or CVD and a precursor composition including the same. In particular, the present disclosure aims to provide a liquid precursor composition that is purified at low temperatures, has excellent thermal stability and volatility, and is capable of thin film deposition over a wide temperature range. Furthermore, the present disclosure aims to provide a method of manufacturing a thin film using the precursor composition. However, the problems to be solved by the present application are not limited to the aforementioned description, and other problems not mentioned can be clearly understood by those skilled in the art from the following description. Technical Solution One aspect of the present application provides a compound represented by Formula 1 below, wherein in Formula 1,M is titanium (Ti), zirconium (Zr), or hafnium (Hf),R1 to R4 are each independently hydrogen, or a straight-chain or branched-chain hydrocarbon group having 1 to 6 carbon atoms, andR5 to R10 are each independently hydrogen, or a straight-chain or branched-chain hydrocarbon group having 1 to 4 carbon atoms. Another aspect of the present application provides a precursor composition for vapor deposition, the precursor composition including the aforementioned compound. A further aspect of the present application provides a method of manufacturing a thin film, the method including a step of introducing the aforementioned precursor composition for vapor deposition into a chamber. Advantageous Effects A novel compound and a precursor composition including the novel compound, according to the present disclosure, have excellent reactivity, volatility, and thermal stability, are liquid, and enable deposition of a uniform thin film having excellent properties. Accordingly, the thin film can obtain excellent physical properties, thickness, and step coverage. Such physical properties provide a precursor