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EP-4738010-A1 - NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION COATING FILM, NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION FILM, CURED FILM, AND ELECTRONIC COMPONENT COMPRISING SAME

EP4738010A1EP 4738010 A1EP4738010 A1EP 4738010A1EP-4738010-A1

Abstract

The present invention provides a resin composition which has excellent pattern processability in a thick film and does not generate an organic deposit even when processing is performed on a substrate having an aluminum pad electrode. A negative photosensitive resin composition contains (B) a polymerizable compound and (C) a photopolymerization initiator. The content of fluorine atoms in the total solid content of the negative photosensitive resin composition is characterized to be 0.0% by mass to 1.0% by mass inclusive.

Inventors

  • KOYAMA YUTARO
  • MASUDA YUKI
  • SUGIURA KANTA
  • MATSUMURA KAZUYUKI
  • KATO KEIGO
  • TATEOKA YOSHIKO

Assignees

  • Toray Industries, Inc.

Dates

Publication Date
20260506
Application Date
20240619

Claims (18)

  1. A negative type photosensitive resin composition comprising a polymerizable compound (B) and a photopolymerization initiator (C), wherein the negative type photosensitive resin composition has a fluorine atom content of 0.0 mass% or more and 1.0 mass% or less relative to the total solid content of the negative type photosensitive resin composition.
  2. A negative type photosensitive resin composition as set forth in claim 1, further comprising a polymer compound (A), wherein the polymer compound (A) is at least one polymer compound selected from the group consisting of polyimide, polyamide, and polyamide-imide.
  3. A negative type photosensitive resin composition as set forth in claim 2, wherein the polymer compound (A) is soluble in an alkaline aqueous solution.
  4. A negative type photosensitive resin composition as set forth in either claim 2 or 3, wherein the polymer compound (A) specified above (hereinafter, occasionally referred to as the component (A)) contains at least one type of diamine residue derived from a diamine as represented by any of the general formulae (8) to (12): wherein, in the general formula (8), Z 1 and Z 2 are each independently a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms and free of fluorine atoms; the general formula (9) does not contain a structure as represented by the general formula (8), and Z 3 in the general formula (9) denotes a sulfonyl group, a carbonyl group, an oxygen atom, a divalent organic group having a linear aliphatic group having 2 to 20 carbon atoms and free of fluorine atoms, or a single bond; in the general formula (10), Z 4 and Z 5 are each independently an amide group, a sulfonyl group, a carbonyl group, an oxygen atom, or a single bond; in the general formula (11), Z 6 and Z 7 are each independently a phenylene group or a divalent organic group having 1 to 20 carbon atoms and free of fluorine atoms; and in the general formula (12), Z 8 and Z 9 are each independently a phenylene group or a divalent organic group having 1 to 20 carbon atoms and free of fluorine atoms, and Z 10 and Z 11 are each independently an amide group, a sulfonyl group, a carbonyl group, an oxygen atom, or a single bond.
  5. A negative type photosensitive resin composition as set forth in either claim 2 or 3, wherein the component (A) contains at least one type of diamine residue derived from a diamine as represented by any of the general formulae (3) to (6):
  6. A negative type photosensitive resin composition as set forth in claim 5, wherein diamine residues derived from diamines as represented by any of the general formulae (3) to (6) altogether account for 50 to 100 mol% of the total amount, which accounts for 100 mol%, of all diamine residues present in the component (A).
  7. A negative type photosensitive resin composition as set forth in claim 5, wherein diamine residues derived from diamines as represented by the general formula (3) and diamine residues derived from diamines as represented by the general formula (4) altogether account for 20 to 80 mol% of the total amount, which accounts for 100 mol%, of all diamine residues present in the component (A).
  8. A negative type photosensitive resin composition as set forth in claim 5, wherein diamine residues derived from diamines as represented by the general formula (5) and diamine residues derived from diamines as represented by the general formula (6) altogether account for 20 to 80 mol% of the total amount, which accounts for 100 mol%, of all diamine residues present in the component (A).
  9. A negative type photosensitive resin composition as set forth in claim 5, wherein the ratio a:b is in the range of 20:80 to 80:20 where a (mol%) represents the combined proportion of diamine residues derived from diamines as represented by the general formula (3) and diamine residues derived from diamines as represented by the general formula (4) relative to the total amount, which accounts for 100 mol%, of all diamine residues present in the component (A) while b (mol%) represents the combined proportion of diamine residues derived from diamines as represented by the general formula (5) and diamine residues derived from diamines as represented by the general formula (6) relative thereto.
  10. A negative type photosensitive resin composition as set forth in claim 5, wherein the ratio a(4):a(5) is in the range of 20:80 to 80:20 where a(4) (mol%) represents the proportion of diamine residues derived from diamines as represented by the general formula (4) while a(5) represents the proportion of diamine residues derived from diamines as represented by the general formula (5) relative to the total amount, which accounts for 100 mol%, of all diamine residues present in the component (A).
  11. A negative type photosensitive resin composition as set forth in claim 1, wherein the polymerizable compound (B) is a radically polymerizable compound while the photopolymerization initiator (C) is a photoradical polymerization initiator.
  12. A negative type photosensitive resin composition as set forth in claim 1, wherein the polymerizable compound (B) is a cationically polymerizable compound while the photopolymerization initiator (C) is a photocationic polymerization initiator.
  13. A negative type photosensitive resin composition as set forth in either claim 2 or 3, comprising at least one selected from the group consisting of 4-methyl-γ-butyrolactone, methyl 4-methoxybutanoate, 1,4-dioxane, triethylene glycol dimethyl ether, and 2-butyltetrahydrofuran each in an amount of 0.0001 to 0.05 part by mass relative to 100 parts by mass of the polymer compound (A).
  14. A negative type photosensitive resin composition as set forth in claim 1, designed for use to form a negative type pattern on an aluminum electrode.
  15. A negative type photosensitive resin composition layer formed from a negative type photosensitive resin composition as set forth in claim 1.
  16. A negative type photosensitive resin composition film comprising a negative type photosensitive resin composition layer as set forth in claim 15 and a support.
  17. A cured layer produced by curing a negative type photosensitive resin composition as set forth in claim 1 or by curing a negative type photosensitive resin composition layer as set forth in claim 15.
  18. An electronic component comprising a cured layer as set forth in claim 17.

Description

TECHNICAL FIELD The present invention relates to a negative type photosensitive resin composition, a negative type photosensitive resin composition layer, a negative type photosensitive resin composition film, a cured layer, and electronic components formed thereof. More specifically, it relates to a resin composition that can be suitably used to produce surface protection films or interlaminar insulation film for semiconductor elements and electronic components, structures for MEMS (microelectromechanical systems), or the like. BACKGROUND ART Conventionally, polyimide based materials and polybenzoxazole based materials, which generally have high heat resistance, good electrical insulation properties, and good mechanical properties, have been widely used in surface protection films and interlaminar insulation films of semiconductor elements. In recent years, with the increasing demand for semiconductor devices with higher density and higher performance, photosensitive materials are now required for surface protection films and interlaminar insulating films from the standpoint of ensuring enhanced production efficiency. As such photosensitive materials, those materials produced by imparting photosensitivity to polyimide based materials or polybenzoxazole based materials have been generally used. The use of these materials serves to simplify the pattern formation steps and shorten the complex pattern production steps. As one example of such photosensitive materials, positive type photosensitive polyimide materials have been proposed (for example, see Patent document 1). Patent document 1 describes that the use of a polyimide precursor or a polybenzoxazole precursor resin that are free of fluorine atoms serves to prevent the pad electrode portions from undergoing residue generation and corrosion, making it possible to produce electronic components having organic insulating films with high reliability. However, in general, positive type photosensitive materials have a problem of difficulty in forming thick insulating films due to outgassing from photosensitizers and significant film loss during development. Furthermore, the use of a polyimide precursor or a polybenzoxazole precursor resin leads to a significant shrinkage during curing, which is also a reason for the difficulty in forming a thick insulating film. On the other hand, as a photosensitive material, some documents have disclosed cationically polymerizable negative type photosensitive materials that contain a polymer compound such as polyimide, a cationically polymerizable compound such as epoxy compounds, and a cationic polymerization initiator (for example, see Patent document 2). When a negative type photosensitive material as disclosed in Patent document 2 is used, the influence of curing shrinkage can be reduced as compared to positive type photosensitive materials as proposed in Patent document 1, thereby enabling favorable patterning even in applications that require the formation of thick insulating films. PRIOR ART DOCUMENTS PATENT DOCUMENTS Patent document 1: Japanese Unexamined Patent Publication (Kokai) No. 2009-283711Patent document 2: Japanese Unexamined Patent Publication (Kokai) No. 2021-055055 SUMMARY OF INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION However, as a disadvantage of the use of a cationically polymerizable negative type photosensitive material such as that proposed in Patent document 2, organic deposits are likely to be generated on the aluminum pad electrode portions if patterning is performed on a substrate having aluminum pad electrodes and followed by dry etching processing. In view of such a situation, the present inventors conducted intensive investigations, and as a result, discovered that the use of a negative type photosensitive resin composition including a polymerizable compound and a photopolymerization initiator, wherein the negative type photosensitive resin composition has a fluorine atom content of 0.0 mass% or more and 1.0 mass% or less relative to the total solid content of the negative type photosensitive resin composition, serves to ensure a high patternability even in thick films and also prevent the occurrence of organic deposits even when processing is performed on a substrate having aluminum pad electrodes. MEANS OF SOLVING THE PROBLEMS The present invention, which is designed for solving the above problems, has the features described below. <1> A negative type photosensitive resin composition including a polymerizable compound (B) and a photopolymerization initiator (C), wherein the negative type photosensitive resin composition has a fluorine atom content of 0.0 mass% or more and 1.0 mass% or less relative to the total solid content of the negative type photosensitive resin composition. A negative type photosensitive resin composition as set forth in the paragraph <1>, further comprising a polymer compound (A), wherein the polymer compound (A) is at least one polymer compound selected from the