EP-4738012-A1 - METHOD OF LITHOGRAPHY ON A RECONSTITUTED SUBSTRATE WITH POSITIONAL CORRECTION

EP4738012A1EP 4738012 A1EP4738012 A1EP 4738012A1EP-4738012-A1

Abstract

Disclosed is a method of determining a correction for performing a lithographic exposure on a reconstituted substrate, said reconstituted substrate comprising a base substrate with a plurality of substrate portions bonded thereto, said substrate portions having been diced from one or more pre-diced substrates The method comprises: obtaining positional data describing a position of features in at least an uppermost layer of said one or more pre-diced substrates; and using said positional data to determine said correction for performing the lithographic exposure on the reconstituted substrate.

Inventors

SELEN, Jori
WERKMAN, ROY
HAUPTMANN, MARC

Assignees

ASML Netherlands B.V.

Dates

Publication Date: 20260506
Application Date: 20241101

Claims (15)

A method of determining a correction for performing a lithographic exposure on a reconstituted substrate, said reconstituted substrate comprising a base substrate with a plurality of substrate portions bonded thereto, said substrate portions having been diced from one or more pre-diced substrates; the method comprising: obtaining positional data describing a position of features in at least an uppermost layer of said one or more pre-diced substrates; and using said positional data to determine said correction for performing the lithographic exposure on the reconstituted substrate.
A method as claimed in claim 1, wherein said positional data comprises and/or is derived from overlay data from at least said uppermost layer.
A method as claimed in claim 2, wherein said positional data comprises and/or is derived from alignment data for a reference layer to which said overlay data is referenced.
A method as claimed in claim 3, wherein said positional data comprises a comparison and/or difference of said overlay data and alignment data.
A method as claimed in any preceding claim, wherein said positional data comprises per-substrate portion positional data, describing a position of features individually for each said substrate portion.
A method as claimed in claim 5, comprising tracking each said substrate portion and its corresponding positional data as measured for the substrate portion on the pre-diced substrate prior to dicing.
A method as claimed in claim 5 or 6, comprising optimizing the selection and/or positioning of the individual substrate portions on said base substrate based on the per-substrate portion positional data, so as to optimize a likelihood that features exposed in said lithographic exposure are within specification.
A method as claimed in claim 7, wherein said optimizing the selection and/or positioning of the individual substrate portions comprises minimizing or reducing discontinuities and/or maximizing or increasing smoothness in positional error at least partially described by the positional data across said reconstituted substrate.
A method as claimed in any preceding claim, comprising obtaining reconstituted substrate alignment data measured from the reconstituted substrate, wherein said reconstituted substrate alignment data has been measured from no more than six locations per substrate portion as bonded to said reconstituted substrate.
A method as claimed in claim 9, comprising determining a placement error correction for placement errors in bonding the substrate portions to the base substrate from said reconstituted substrate alignment data; and determining said correction for performing the lithographic exposure on the reconstituted substrate additionally from said placement error correction.
A method as claimed in any preceding claim, comprising determining individual error components of positional errors on the reconstituted substrate attributable to two or more of: a positional error in the position of features in at least the uppermost layer of said one or more pre-diced substrates; variation in location of the substrate portion on the pre-diced substrate from which its diced; placement errors in bonding the substrate portions to the base substrate; and said change of shape of said reconstituted substrate induced from bonding of said substrate portions to said base substrate.
A method as claimed in any preceding claim, further comprising determining an estimate of yield probability based on at least said positional data.
A method as claimed in any preceding claim, comprising exposing each of one or more layers on said reconstituted substrate using said determined correction for performing the lithographic exposure.
A computer program comprising program instructions operable to perform the method of any of claims 1 to 13, when run on a suitable apparatus.
A non-transient computer program carrier the computer program of claim 14.

Description

BACKGROUND Field of the Invention The present invention relates to a method and apparatus for lithography and in particular to lithography on a reconstituted substrate having been the subject of a die-to-wafer bonding process. Background A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g. comprising part of, one, or several dies) on a substrate (e.g. a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at one time, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the "scanning"-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate. Process control methods are used in the manufacture of integrated devices to monitor and control the processes of application of a pattern on a substrate or measurement of such a pattern. Such process control techniques are typically performed to obtain corrections for control of the process. Subsequently, it is sometimes required (for certain devices) to bond substrates together. Bonding processes include die-to-die, die-to-wafer and wafer-to-wafer. In die-to-wafer bonding, individual dies or chiplets are bonded to an acceptor wafer or substrate (i.e., a base patterned substrate). A wafer reconstitution (or wafer reconstruction) may then be performed, comprising one or more processing steps to, for example, fill in gaps between the individual dies. The reconstituted wafer undergoes one or more further lithography processes (patterning steps), e.g., to form connections between patterns on the individual dies and patterns on the reconstituted wafer (and/or other individual dies). It is desirable to improve lithography processes on reconstituted wafers in the manufacture of integrated devices. SUMMARY OF THE INVENTION In a first aspect of the invention, there is provided a method of determining a correction for performing a lithographic exposure on a reconstituted substrate, said reconstituted substrate comprising a base substrate with a plurality of substrate portions bonded thereto, said substrate portions having been diced from one or more pre-diced substrates; the method comprising: obtaining positional data describing a position of features in at least an uppermost layer of said one or more pre-diced substrates; and using said positional data to determine said correction for performing the lithographic exposure on the reconstituted substrate. In other aspects of the invention, there is provided a computer program operable to perform the method the first aspect and a substrate obtained by performing the method of the first aspect. Further aspects, features and advantages of the invention, as well as the structure and operation of various embodiments of the invention, are described in detail below with reference to the accompanying drawings. It is noted that the invention is not limited to the specific embodiments described herein. Such embodiments are presented herein for illustrative purposes only. Additional embodiments will be apparent to persons skilled in the relevant art(s) based on the teachings contained herein. BRIEF DESCRIPTION OF THE DRAWINGS Embodiments of the invention will now be described, by way of example, with reference to the accompanying drawings in which: Figure 1 depicts a lithographic apparatus together with other apparatuses forming a production facility for semiconductor devices;Figure 2 illustrates a die-to-wafer bonding process; andFigure 3(a) illustrates a step of a feed-forward positional data method usable in a die-to-wafer bonding according to concepts disclosed herein;Figure 3(b) illustrates an alignment metrology strategy for measuring bonded dies on a reconstituted wafer according to concepts disclosed herein; andFigure 3(c) illustrates an in-plane deformation determination step for a reconstituted wafer according to concepts disclosed herein. DETAILED DESCRIPTION Before describing embodiments of the invention in detail, it is instructive to present an example environment in which embodiments of the pres