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EP-4738128-A1 - STORAGE DEVICE, OPERATION METHOD THEREOF AND COMPUTING SYSTEM INCLUDING THE STORAGE DEVICE

EP4738128A1EP 4738128 A1EP4738128 A1EP 4738128A1EP-4738128-A1

Abstract

A storage device includes a nonvolatile memory device configured to store data, a storage interface connected to a host device, and a storage controller configured to receive a command from the host device through the storage interface and to control the nonvolatile memory device in response to the command. When the storage controller receives a command sequence from the host device more than a reference number of times and command sequence includes a first write command instructing a first write operation, a second write command instructing a second write operation, and a flush command instructing a flush operation sequentially, the storage controller executes the first write command by sequential write to store first write data in a first memory region of the nonvolatile memory device, and executes the second write command by random write to store second write data in the second memory region of the nonvolatile memory device.

Inventors

  • LEE, Sanggeol
  • LEE, SEULKI

Assignees

  • Samsung Electronics Co., Ltd.

Dates

Publication Date
20260506
Application Date
20250627

Claims (15)

  1. A storage device, comprising: a nonvolatile memory device (123) configured to store data; a storage interface (125) configured to be connected to an external host device (110); and a storage controller (121) configured to receive a command from the external host device (110) through the storage interface (125) and to control the nonvolatile memory device (123) in response to the command, wherein, the storage device is configured such that, when the storage controller (121) receives a command sequence from the external host device (110) more than a reference number of times and the command sequence includes a first write command instructing a first write operation, a second write command instructing a second write operation, and a flush command instructing a flush operation: the storage controller (121) executes the first write command by sequential write to store first write data in a first memory region of the nonvolatile memory device, and executes the second write command by random write to store second write data in a second memory region of the nonvolatile memory device.
  2. The storage device of claim 1, wherein capacity of the first write data is greater than capacity of the second write data.
  3. The storage device of claim 1 or claim 2, wherein the first write data is snapshot data generated by a recall function activated in an operating system installed in the nonvolatile memory device (123) and loaded into the external host device (110), and wherein the second write data is metadata.
  4. The storage device of claim 3, wherein the nonvolatile memory device (123) is configured to provide a recall space including the first memory region and the second memory region, and wherein the recall space is defined in a system partition in which the operating system of the external host device (110) is installed.
  5. The storage device of claim 4, wherein, the storage device is configured such that, when the remaining capacity of the system partition is less than a predetermined minimum free capacity: the storage controller (121) stores the first write data and the second write data in a buffer region of the nonvolatile memory device different from the first memory region and the second memory region, in response to the command sequence received from the external host device (110).
  6. The storage device of claim 5, wherein the storage controller (121) is configured to write 1 bit of each of the first write data and the second write data in each of a plurality of memory cells included in the buffer region.
  7. The storage device of claim 6, wherein the storage controller (121) is configured to move the first write data and the second write data written in the buffer region to a data region of the nonvolatile memory device (123) different from the buffer region in accordance with a predetermined migration policy.
  8. The storage device of any preceding claim, wherein the storage controller (121) is configured to store 2 or more bits of data in each of a plurality of first memory cells included in the first memory region, and store 1 bit of data in each of a plurality of second memory cells included in the second memory region.
  9. The storage device of any preceding claim, further comprising: a random access memory, RAM device (227), wherein the flush operation is an operation of moving data stored in the RAM device (227) to the nonvolatile memory device (123).
  10. An operation method of a storage device, the operation method comprising: receiving (S21) a command sequence including a first write command, a second write command, and a flush command from an external host device; comparing (S23) the number of times the command sequence is received with a reference number; comparing (S31) the remaining capacity of a system partition in which an operating system is installed in a memory device included in the storage device with a reference free capacity when the number of times receiving the command sequence is equal to or greater than the reference number; and when the remaining capacity is greater than or equal to the reference free capacity, storing (S25) first write data in a first memory region of the memory device by sequential write in response to the first write command, and storing (S26) second write data in a second memory region of the memory device by random write in response to the second write command.
  11. The operation method of claim 10, further comprising: when the number of times the command sequence is received is less than the reference number, storing (S28) the first write data and the second write data in a buffer region different from the first memory region and the second memory region.
  12. The operation method of claim 10 or claim 11, further comprising: prohibiting migration of the second write data stored in the second memory region by random write.
  13. The operation method of any of claims 10-12, wherein the first memory region includes at least one of a multilevel cell, a triple level cell, and a quad level cell, and wherein the second memory region includes a single level cell.
  14. The operation method of any of claims 10-13, further comprising: when the remaining capacity is less than the minimum free capacity, storing (S37) the first write data and the second write data in a buffer region different from the first memory region and the second memory region.
  15. The operation method of any of claims 10-14, further comprising: when the number of times the command sequence is received is equal to or greater than the reference number and the remaining capacity is greater than or equal to the reference free capacity, determining whether (S34) a first logical address of the first write command points to the first memory region, and whether (S35) a second logical address of the second write command points to the second memory region.

Description

BACKGROUND Example embodiments of the present disclosure relate to a storage device, an operation method thereof and a computing system including the storage device. A storage device may be connected to a host device, may store data transmitted from the host device, and may transmit the stored data to the host device. The storage device may include a memory device and a storage controller, and the storage controller may be connected to the host device through a predetermined interface. The host device connected to the storage device may provide a recall function of generating snapshot data by capturing data of a running screen and storing the generated data in the storage device in order to improve user convenience. By storing the snapshot data generated from the host device in the storage device, a work history may be provided to a user. However, in the process of storing the snapshot data in the storage device, a write amplification factor (WAF) of the storage device may increase, such that lifespan may be shortened or reliability of the storage device may be deteriorated. Therefore, it is desirable to reduce the WAF of the storage device even when the process of storing the snapshot data is performed. SUMMARY Example embodiments of the present disclosure are to provide a storage device which may reduce an increase in WAF and may improve lifespan and reliability by storing snapshot data generated by activating a recall function by a host device as sequential write rather than random write, an operation method thereof and a computing system including the storage device. According to an example embodiment of the present disclosure, a storage device includes a nonvolatile memory device configured to store data, a storage interface connected to an external host device, and a storage controller configured to receive a command from the external host device through the storage interface and to control the nonvolatile memory device in response to the command. When the storage controller receives a command sequence from the external host device more than a reference number of times and the command sequence includes a first write command instructing a first write operation, a second write command instructing a second write operation, and a flush command instructing a flush operation sequentially, the storage controller executes the first write command by sequential write to store first write data in a first memory region of the nonvolatile memory device, and executes the second write command by random write to store second write data in the second memory region of the nonvolatile memory device. According to an example embodiment of the present disclosure, an operation method of a storage device includes receiving a command sequence including a first write command, a second write command, and a flush command from an external host device, comparing the number of times the command sequence is received with a reference number, comparing the remaining capacity of a system partition in which an operating system is installed in a memory device included in the storage device with a reference free capacity when the number of times receiving the command sequence is equal to or greater than the reference number, and when the remaining capacity is greater than or equal to the reference free capacity, storing first write data in a first memory region of the memory device by sequential write in response to the first write command, and storing second write data in a second memory region of the memory device by random write in response to the second write command. According to an example embodiment of the present disclosure, a computing system includes a storage device and a host device. The storage device includes a memory device, a storage interface, and a storage controller. The host device includes a processor and a host interface connected to the storage interface. The processor executes a boot process by loading an operating system installed in a system partition of the memory device, activates a recall function of generating snapshot data and metadata obtained by capturing a screen displayed by an application executing on the host device, and transmits to the storage device a command sequence including a first write command instructing writing of the snapshot data, and a second write command instructing writing of the metadata to the storage device. The storage controller stores the snapshot data in a first memory region of the system partition by sequential write, stores the metadata in a second memory region of the system partition by random write, and prohibits migration of the metadata written in the second memory region. At least some of the above and other features of the invention are set out in the claims. BRIEF DESCRIPTION OF DRAWINGS The above and other aspects, features, and advantages of the present disclosure will be more clearly understood from the following detailed description, taken in combination with the