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EP-4738401-A1 - CAPACITOR, SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR, METHOD OF FABRICATING THE CAPACITOR

EP4738401A1EP 4738401 A1EP4738401 A1EP 4738401A1EP-4738401-A1

Abstract

Provided are a capacitor, a semiconductor device including the capacitor, and a method of fabricating the capacitor. The capacitor includes a first electrode, a ferroelectric layer on the first electrode, a second electrode on the ferroelectric layer, and an interfacial layer between the first electrode and the ferroelectric layer and/or between the ferroelectric layer and the second electrode.

Inventors

  • Na, Byunghoon
  • KIM, SUNGHYUN
  • KIM, Hyowon
  • LEE, JOOHO

Assignees

  • Samsung Electronics Co., Ltd.

Dates

Publication Date
20260506
Application Date
20251029

Claims (15)

  1. A capacitor comprising: a first electrode; a ferroelectric layer on the first electrode; a second electrode on the ferroelectric layer; and an interfacial layer between the first electrode and the ferroelectric layer and/or between the ferroelectric layer and the second electrode, wherein the interfacial layer comprises a perovskite structure material, the perovskite structure material comprises an oxide of metals, the metals comprising a divalent cation, a tetravalent cation, and a trivalent cation, and the trivalent cation comprises at least one selected from Sc, Y, La, Ce, Pr, Nd, Sm, Dy, Al, Ga, or In.
  2. The capacitor of claim 1, wherein the divalent cation of the interfacial layer comprises at least one selected from La, Sr, Ba, Nd, Pb, Ca, Na, Eu, or Rb.
  3. The capacitor of claim 1 or 2, wherein the tetravalent cation of the interfacial layer comprises at least one selected from Ti, Ta, Zr, Hf, or Sn.
  4. The capacitor of any preceding claim, wherein the first electrode and the second electrode comprise at least one selected from a perovskite structure material or a rock-salt structure material.
  5. The capacitor of claim 4, wherein the first electrode and the second electrode comprise at least one selected from SrRuO 3 , SrIrO 3 , SrFeO 3 , SrCoO 3 , SrMnO 3 , CaRuO 3 , LaMnO 3 , La (x) Sr (1-x) MnO 3 , LaNiO 3 , LaFeO 3 , LaCoO 3 , BN, AIN, GaN, Si 3 N 4 , Ta 3 N 5 , Cu 3 N, InN, Zr 3 N 4 , Hf 3 N 4 , LaN, LuN, TiN, MN, VN, TaN, WN, HfN, NbN, and ZrN.
  6. The capacitor of any preceding claim, wherein the ferroelectric layer comprises at least one selected from a perovskite structure, a fluorite structure, or a wurtzite structure.
  7. The capacitor of claim 6, wherein the ferroelectric layer comprises at least one selected from BaTiO 3 , Ba (x) Sr (1-x) TiO 3 , PbTiO 3 , PbZrO 3 , PbTi (x) Zr (1-x) O 3 , PbMg (x) Nb (1-x) O 3 , PbZn (x) Nb (1-x) O 3 , PbFe (x) Nb (1-x) O 3 , PbNi (x) Nb (1-x) O 3 , PbMg (x) Ta (1-x) O 3 , PbMg (x) W (1-x) O 3 , BiFeO 3 , KNbO 3 , NaNbO 3 , or Sr 2 Bi 2 TaO 9 .
  8. The capacitor of claim 6 or 7, wherein the ferroelectric layer comprises HfO 2 or HfO 2 doped with A, and A comprises at least one selected from Sr, Sc, Y, Al, La, Si, Gd, Zr, N, or Ge.
  9. The capacitor of claim 8, wherein the ferroelectric layer comprises hafnium zirconium oxide (HZO).
  10. The capacitor of claim 6, wherein the ferroelectric layer comprises at least one selected from Sc (x) Al (1-x) N, Y (x) Al (1-x) N, Mg (x) Zr (1-x) N, Ga (x) Sc (1-x) N, Sc (x) Al (1-x-y) Ga (y) N, or Zn (x) Mg (1-x) O.
  11. The capacitor of any preceding claim, wherein the interfacial layer has a negative charge.
  12. A semiconductor device comprising: a substrate; a gate structure on the substrate; a source region and a drain region being apart from each other in the substrate; and a capacitor according to any preceding claim over the substrate.
  13. The semiconductor device of claim 12, wherein the ferroelectric layer has a superlattice structure.
  14. The semiconductor device of claim 12 or 13, wherein the interfacial layer has a negative charge.
  15. A method of fabricating a capacitor, the method comprising: forming a ferroelectric layer on a first electrode; forming a second electrode on the ferroelectric layer; and forming an interfacial layer between the first electrode and the ferroelectric layer and/or between the ferroelectric layer and the second electrode, wherein the interfacial layer has a perovskite structure material, the interfacial layer comprises an oxide of metals, the metals comprise a divalent cation, a tetravalent cation, and a trivalent cation, and the trivalent cation comprises at least one selected from Sc, Y, La, Ce, Pr, Nd, Sm, Dy, Al, Ga, or In.

Description

FIELD OF THE INVENTION This disclosure relates to capacitors, semiconductor devices including the capacitors, and/or methods of fabricating the capacitors. BACKGROUND OF THE INVENTION With the downscaling of integrated circuit devices, the space occupied by capacitors has also decreased. Capacitors consist of a first electrode, a second electrode, and a dielectric layer provided between the first and second electrodes, and the dielectric layer includes a high-k material to enhance capacitance. However, as the size of capacitors decreases, leakage current may flow within the capacitors. Thus, techniques for reducing leakage current flowing within capacitors while suppressing a decrease in the capacitance of the capacitors are needed. SUMMARY OF THE INVENTION Some example embodiments provide capacitors including an interfacial layer that enhances the crystallization of a ferroelectric layer. Some example embodiments provide semiconductor devices including a capacitor with a ferroelectric layer having enhanced ferroelectricity. Some example embodiments provide methods of fabricating a capacitor. Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented example embodiments of the disclosure. According to an example embodiment of the disclosure, a capacitor includes a first electrode, a ferroelectric layer on the first electrode, a second electrode on the ferroelectric layer, and an interfacial layer between the first electrode and the ferroelectric layer and/or between the ferroelectric layer and the second electrode, wherein the interfacial layer includes a perovskite structure material, the perovskite structure material includes an oxide of metals, the metals include a divalent cation, a tetravalent cation, and a trivalent cation, and the trivalent cation includes at least one selected from Sc, Y, La, Ce, Pr, Nd, Sm, Dy, Al, Ga, or In. The divalent cation of the interfacial layer may include at least one selected from La, Sr, Ba, Nd, Pb, Ca, Na, Eu, or Rb. The tetravalent cation of the interfacial layer may include at least one selected from Ti, Ta, Zr, Hf, or Sn. The first electrode and the second electrode may include at least one selected from a perovskite structure material or a rock-salt structure material. The first electrode and the second electrode may include at least one selected from SrRuO3, SrIrO3, SrFeO3, SrCoO3, SrMnO3, CaRuO3, LaMnO3, La(x)Sr(1-x)MnO3, LaNiO3, LaFeO3, LaCoO3, BN, AIN, GaN, Si3N4, Ta3N5, Cu3N, InN, Zr3N4, Hf3N4, LaN, LuN, TiN, MN, VN, TaN, WN, HfN, NbN, or ZrN. The ferroelectric layer may include at least one selected from a perovskite structure, a fluorite structure, or a wurtzite structure. The ferroelectric layer may include at least one selected from BaTiO3, Ba(x)Sr(1-x)TiO3, PbTiO3, PbZrO3, PbTi(x)Zr(1-x)O3, PbMg(x)Nb(1-x)O3, PbZn(x)Nb(1-x)O3, PbFe(x)Nb(1-x)O3, PbNi(x)Nb(1-x)O3, PbMg(x)Ta(1-x)O3, PbMg(x)W(1-x)O3, BiFeO3, KNbO3, NaNbO3, or Sr2Bi2TaO9. The ferroelectric layer may include HfO2 or HfO2 doped with A, and A may include at least one selected from Sr, Sc, Y, Al, La, Si, Gd, Zr, N, or Ge. The ferroelectric layer may include hafnium zirconium oxide (HZO). The ferroelectric layer may include at least one selected from Sc(x)Al(1-x)N, Y(x)Al(1-x)N, Mg(x)Zr(1-x)N, Ga(x)Sc(1-x)N, Sc(x)Al(1-x-y)Ga(y)N, or Zn(x)Mg(1-x)O. The ferroelectric layer may have a superlattice structure. The interfacial layer may have a negative charge. According to another example embodiment of the disclosure, a semiconductor device includes a substrate, a gate structure on the substrate, a source region and a drain region being apart from each other in the substrate, and a capacitor over the substrate. The capacitor includes a first electrode, a ferroelectric layer on the first electrode, a second electrode on the ferroelectric layer, and an interfacial layer between the first electrode and the ferroelectric layer and/or between the ferroelectric layer and the second electrode. The interfacial layer includes a perovskite structure material. The interfacial layer includes an oxide of metals, and the metals include a divalent cation, a tetravalent cation, and a trivalent cation. The trivalent cation includes at least one selected from Sc, Y, La, Ce, Pr, Nd, Sm, Dy, Al, Ga, or In. According to another example embodiment of the disclosure, a method of fabricating a capacitor includes forming a ferroelectric layer on a first electrode, forming a second electrode on the ferroelectric layer, and forming an interfacial layer between the first electrode and the ferroelectric layer and/or between the ferroelectric layer and the second electrode. The interfacial layer has a perovskite structure material. The interfacial layer includes an oxide of metals. The metals include a divalent cation, a tetravalent cation, and a trivalent cation. The trivalent cation includes at least one selected fr