EP-4738426-A1 - SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

EP4738426A1EP 4738426 A1EP4738426 A1EP 4738426A1EP-4738426-A1

Abstract

Provided is a technique capable of reducing a collapse rate of a pattern of a peripheral edge portion of a substrate. A substrate processing method includes a holding step, a liquid processing step, and a drying step. In the holding step, a substrate is held. In the liquid processing step, a processing liquid is supplied to a first main surface (Wa) of a substrate (W). In a drying liquid supply step, after the liquid processing step, while the substrate (W) is rotated and a second main surface (Wb) of the substrate (W) is heated, a drying liquid having a surface tension lower than that of the processing liquid is supplied to the first main surface (Wa) of the substrate (W). During at least a part of the drying liquid supply step, the drying liquid is dispensed from a first dispense port (3ia) of a dispenser (3) to land at a central portion of the first main surface (Wa) of the substrate (W), while the drying liquid is dispensed from a second dispense port (3ib) of the dispenser (3) to land at a peripheral edge portion of the first main surface (Wa) of the substrate (W). In the drying step, after the drying liquid supply step, the drying liquid on the first main surface (Wa) of the substrate (W) is evaporated to dry the substrate (W).

Inventors

TAKEMATSU, YUSUKE
KATO, MASAHIKO
ISHIZU, TAKAAKI
NAKANO, AKIYOSHI
MIZUKAMI, Daijo
IWAKAWA, YUTAKA
SHIRAO, TAKASHI

Assignees

SCREEN Holdings Co., Ltd.

Dates

Publication Date: 20260506
Application Date: 20240625

Claims (12)

A substrate processing method comprising: a holding step of holding a substrate having a first main surface on which a pattern is formed and a second main surface on a side opposite to said first main surface; a liquid processing step of supplying a processing liquid to said first main surface of said substrate; a drying liquid supply step of supplying a drying liquid having a surface tension lower than that of said processing liquid to said first main surface of said substrate while rotating said substrate and heating said second main surface of said substrate after said liquid processing step; and a drying step of drying said substrate by evaporating said drying liquid on said first main surface of said substrate after said drying liquid supply step, wherein during at least a part of said drying liquid supply step, said drying liquid is dispensed from a first dispense port of a dispenser to land at a central portion of said first main surface of said substrate while said drying liquid is dispensed from a second dispense port of said dispenser to land at a peripheral edge portion of said first main surface of said substrate.
The substrate processing method according to claim 1, wherein in said drying step, a middle region located between said central portion and said peripheral edge portion of said first main surface of said substrate is dried before said central portion.
The substrate processing method according to claim 1 or 2, wherein in said drying liquid supply step, said drying liquid heated is dispensed from said first dispense port and said second dispense port.
The substrate processing method according to claim 1 or 2, wherein in said drying liquid supply step, a central flow rate of said drying liquid dispensed from said first dispense port is lower than a peripheral flow rate of said drying liquid dispensed from said second dispense port during at least a latter time period of a drying liquid supply time during which said drying liquid is supplied to said first main surface of said substrate.
The substrate processing method according to claim 1 or 2, wherein in said drying liquid supply step, a central flow rate of said drying liquid from said first dispense port is higher than a peripheral flow rate of said drying liquid from said second dispense port during a former time period of a drying liquid supply time during which said drying liquid is supplied to said first main surface of said substrate, and said peripheral flow rate during a latter time period after said former time period is higher than said peripheral flow rate during said former time period.
The substrate processing method according to claim 5, wherein said central flow rate during said latter time period is lower than said central flow rate during said former time period.
The substrate processing method according to claim 5, wherein said latter time period is shorter than said former time period.
The substrate processing method according to claim 1 or 2, wherein in said drying liquid supply step, a heat medium is supplied to a central portion of said second main surface of said substrate to heat said substrate.
The substrate processing method according to claim 1 or 2, wherein in said drying step, a heated inert gas is supplied to a central portion of said first main surface of said substrate.
The substrate processing method according to claim 1 or 2, wherein in said drying liquid supply step, said second main surface of said substrate is heated so that a temperature of at least a portion of said second main surface of said substrate is equal to or higher than a boiling point of said drying liquid while said drying liquid is supplied to said first main surface of said substrate at a flow rate at which the temperature of said first main surface of said substrate is lower than said boiling point.
The substrate processing method according to claim 1 or 2, wherein in said drying liquid supply step, said second main surface of said substrate is heated only during a latter time period of a drying liquid supply time during which said drying liquid is supplied.
A substrate processing apparatus comprising: a substrate holder that rotates a substrate having a first main surface on which a pattern is formed and a second main surface on a side opposite to said first main surface while holding said substrate; a dispenser that dispenses a processing liquid to said first main surface of said substrate held by said substrate holder; and a substrate heater that heats said second main surface of said substrate held by said substrate holder, wherein said dispenser includes a first dispense port that dispenses a drying liquid toward a central portion of said first main surface of said substrate held by said substrate holder, and a second dispense port that dispenses said drying liquid toward a peripheral edge portion of said first main surface of said substrate held by said substrate holder.

Description

TECHNICAL FIELD The present disclosure relates to a substrate processing method and a substrate processing apparatus. BACKGROUND ART Conventionally, a single wafer type substrate processing apparatus for processing a substrate has been disclosed (for example, Patent Document 1). In Patent Document 1, a substrate processing apparatus supplies a rinse liquid to a substrate, then supplies isopropyl alcohol having a surface tension lower than that of the rinse liquid to the substrate, and then dries the substrate. As a result, collapse of patterns of the substrate during drying is suppressed. PRIOR ART DOCUMENT PATENT DOCUMENT Patent Document 1: Japanese Patent Application Laid-Open No. 2015-23182 SUMMARY PROBLEM TO BE SOLVED BY THE INVENTION However, with the technique of Patent Document 1, a collapse rate of the pattern of a peripheral edge portion of the substrate was still high. Therefore, an object of the present disclosure is to provide a technique capable of reducing the collapse rate of the pattern of the peripheral edge portion of the substrate. MEANS TO SOLVE THE PROBLEM A first aspect is a substrate processing method including: a holding step of holding a substrate having a first main surface on which a pattern is formed and a second main surface on a side opposite to the first main surface; a liquid processing step of supplying a processing liquid to the first main surface of the substrate; a drying liquid supply step of supplying a drying liquid having a surface tension lower than that of the processing liquid to the first main surface of the substrate while rotating the substrate and heating the second main surface of the substrate after the liquid processing step; and a drying step of drying the substrate by evaporating the drying liquid on the first main surface of the substrate after the drying liquid supply step, in which during at least a part of the drying liquid supply step, the drying liquid is dispensed from a first dispense port of a dispenser to land at a central portion of the first main surface of the substrate while the drying liquid is dispensed from a second dispense port of the dispenser to land at a peripheral edge portion of the first main surface of the substrate. A second aspect is the substrate processing method according to the first aspect, in which in the drying step, a middle region located between the central portion and the peripheral edge portion of the first main surface of the substrate is dried before the central portion. A third aspect is the substrate processing method according to the first or second aspect, in which in the drying liquid supply step, the drying liquid heated is dispensed from the first dispense port and the second dispense port. A fourth aspect is the substrate processing method according to any one of the first to third aspects, in which in the drying liquid supply step, a central flow rate of the drying liquid dispensed from the first dispense port is lower than a peripheral flow rate of the drying liquid dispensed from the second dispense port during at least a latter time period of a drying liquid supply time during which the drying liquid is supplied to the first main surface of the substrate. A fifth aspect is the substrate processing method according to any one of the first to fourth aspects, in which in the drying liquid supply step, a central flow rate of the drying liquid from the first dispense port is higher than a peripheral flow rate of the drying liquid from the second dispense port during a former time period of a drying liquid supply time during which the drying liquid is supplied to the first main surface of the substrate, and the peripheral flow rate during a latter time period after the former time period is higher than the peripheral flow rate during the former time period. A sixth aspect is the substrate processing method according to the fifth aspect, in which the central flow rate during the latter time period is lower than the central flow rate during the former time period. A seventh aspect is the substrate processing method according to the fifth or sixth aspect, in which the latter time period is shorter than the former time period. An eighth aspect is the substrate processing method according to any one of the first to seventh aspects, in which in the drying liquid supply step, a heat medium is supplied to a central portion of the second main surface of the substrate to heat the substrate. A ninth aspect is the substrate processing method according to any one of the first to eighth aspects, in which in the drying step, a heated inert gas is supplied to a central portion of the first main surface of the substrate. A tenth aspect is the substrate processing method according to any one of the first to ninth aspects, in which in the drying liquid supply step, the second main surface of the substrate is heated so that a temperature of at least a portion of the second main surface of the substrate is equal to or higher than