EP-4738427-A1 - SUBSTRATE PROCESSING METHOD

Abstract

Provided is a technique capable of effectively reducing a collapse ratio of a pattern. A substrate processing method includes a holding step, a liquid supply step, a drying liquid supply step, and a drying step. In the holding step, a substrate having a first main surface on which a pattern is formed and a second main surface on the side opposite to the first main surface is held. In the liquid supply step, process liquid is supplied to the first main surface of the substrate. In the drying liquid supply step, drying liquid is supplied to the first main surface of the substrate after the liquid supply step. In the drying step, the second main surface of the substrate is heated during a predetermined period after the drying liquid supply step, substrate temperature of the first main surface of the substrate is set to be equal to or more than substrate temperature in the drying liquid supply step, and the substrate is dried.

Inventors

• MAKI, YUSUKE
• TAKEMATSU, YUSUKE
• NAKANO, AKIYOSHI
• TAKAGI, Keisuke
• KATO, MASAHIKO
• ISHIZU, TAKAAKI
• IWAKAWA, YUTAKA
• MIZUKAMI, Daijo
• FUJII, SADAMU

Assignees

• SCREEN Holdings Co., Ltd.

Dates

Publication Date

20260506

Application Date

20240626

Claims (13)

1. A substrate processing method comprising: a holding step of holding a substrate having a first main surface on which a pattern is formed and a second main surface on a side opposite to said first main surface; a liquid supply step of supplying process liquid to said first main surface of said substrate; a drying liquid supply step of supplying drying liquid to said first main surface of said substrate after said liquid supply step; and a drying step of heating said second main surface of said substrate in a predetermined period after said drying liquid supply step to set a substrate temperature of said first main surface of said substrate to be equal to or more than said substrate temperature in said drying liquid supply step, and drying said substrate.
2. The substrate processing method according to claim 1, wherein during said predetermined period, said substrate temperature of at least a part of said first main surface of said substrate is equal to or more than a boiling point of said drying liquid.
3. The substrate processing method according to claim 1 or 2, wherein in said drying liquid supply step, said second main surface of said substrate is heated with a first amount of heat per unit time, and during said predetermined period in said drying step, said second main surface of said substrate is heated with a second amount of heat per unit time larger than said first amount of heat.
4. The substrate processing method according to claim 1 or 2, wherein during said predetermined period, a heat medium is supplied to said second main surface of said substrate.
5. The substrate processing method according to claim 3, wherein in said drying liquid supply step, a heat medium obtained by mixing a high-temperature heat medium and a low-temperature heat medium having a temperature lower than a temperature of said high-temperature heat medium is supplied to said second main surface of said substrate, and a mixing ratio of said high-temperature heat medium and said low-temperature heat medium is adjusted to supply said heat medium having a higher temperature than said heat medium in said drying liquid supply step to said second main surface of said substrate at least during said predetermined period in said drying step.
6. The substrate processing method according to claim 4, wherein during said predetermined period, said heat medium having a temperature equal to or more than a boiling point of said drying liquid is supplied to said second main surface of said substrate.
7. The substrate processing method according to claim 4, wherein in said drying liquid supply step, while said heat medium having a temperature equal to or more than a boiling point of said drying liquid is supplied to said second main surface of said substrate, said drying liquid is supplied at a flow rate at which said substrate temperature of said first main surface of said substrate is less than said boiling point.
8. The substrate processing method according to claim 4, wherein said heat medium includes liquid, in said drying liquid supply step, said drying liquid is supplied to said first main surface of said substrate in a state in which a shutoff plate having a facing surface facing said first main surface of said substrate is located at a shutoff processing position, and during said predetermined period in said drying step, in a state where said shutoff plate is moved to a drying position closer to said first main surface than said shutoff processing position, inert gas is supplied from a gas dispense port at a central portion of said shutoff plate toward said first main surface of said substrate.
9. The substrate processing method according to claim 8, wherein during said predetermined period, said heated inert gas is supplied to said first main surface of said substrate.
10. The substrate processing method according to claim 8, wherein in said drying liquid supply step, said inert gas is supplied to said first main surface of said substrate through a gas flow path inside said shutoff plate having an enlarged diameter flow path spreading toward said gas dispense port, and a flow rate of said inert gas is increased while said shutoff plate is moved from said shutoff processing position to said drying position.
11. The substrate processing method according to claim 10, wherein in said drying liquid supply step, said drying liquid is supplied to said first main surface of said substrate in a state where said shutoff plate is located at a first shutoff processing position which is one of said shutoff processing positions, and then said shutoff plate is moved to a second shutoff processing position which is one of said shutoff processing positions and closer to said first main surface of said substrate than said first shutoff processing position while said drying liquid is supplied.
12. The substrate processing method according to claim 1 or 2, wherein during said predetermined period in said drying step, said substrate is rotated at a rotation speed higher than a rotation speed of said substrate in said drying liquid supply step.
13. The substrate processing method according to claim 1 or 2, wherein in said drying liquid supply step, said second main surface of said substrate is heated only in subsequent time during drying liquid supply time for supplying said drying liquid.

Description

TECHNICAL FIELD The present disclosure relates to a substrate processing method. BACKGROUND ART Conventionally, a single wafer type substrate processing apparatus for processing a substrate has been disclosed (for example, Patent Document 1). In Patent Document 1, the substrate processing apparatus supplies rinse liquid to a substrate, then supplies isopropyl alcohol having a surface tension lower than that of the rinse liquid to the substrate, and then dries the substrate. By this, collapse of a pattern of a substrate during drying is suppressed. PRIOR ART DOCUMENT PATENT DOCUMENT Patent Document 1: Japanese Patent Application Laid-Open No. 2015-23182 SUMMARY PROBLEM TO BE SOLVED BY THE INVENTION However, Patent Document 1 does not consider temperature of isopropyl alcohol. For this reason, a pattern collapse ratio cannot be effectively reduced. Therefore, an object of the present disclosure is to provide a technique capable of effectively reducing a pattern collapse ratio. MEANS TO SOLVE THE PROBLEM A first aspect is a substrate processing method including a holding step of holding a substrate having a first main surface on which a pattern is formed and a second main surface on a side opposite to the first main surface, a liquid supply step of supplying process liquid to the first main surface of the substrate, a drying liquid supply step of supplying drying liquid to the first main surface of the substrate after the liquid supply step, and a drying step of heating the second main surface of the substrate in a predetermined period after the drying liquid supply step to set a substrate temperature of the first main surface of the substrate to be equal to or more than the substrate temperature in the drying liquid supply step, and drying the substrate. A second aspect is the substrate processing method according to the first aspect, in which during the predetermined period, the substrate temperature of at least a part of the first main surface of the substrate is equal to or more than a boiling point of the drying liquid. A third aspect is the substrate processing method according to the first or second aspect, in which in the drying liquid supply step, the second main surface of the substrate is heated with a first amount of heat per unit time, and during the predetermined period in the drying step, the second main surface of the substrate is heated with a second amount of heat per unit time larger than the first amount of heat. A fourth aspect is the substrate processing method according to any one of the first to third aspects, in which during the predetermined period, a heat medium is supplied to the second main surface of the substrate. A fifth aspect is the substrate processing method according to the third aspect, in which in the drying liquid supply step, a heat medium obtained by mixing a high-temperature heat medium and a low-temperature heat medium having a temperature lower than a temperature of the high-temperature heat medium is supplied to the second main surface of the substrate, and a mixing ratio of the high-temperature heat medium and the low-temperature heat medium is adjusted to supply the heat medium having a higher temperature than the heat medium in the drying liquid supply step to the second main surface of the substrate at least during the predetermined period in the drying step. A sixth aspect is the substrate processing method according to the fourth or fifth aspect, in which during the predetermined period, the heat medium having a temperature equal to or more than a boiling point of the drying liquid is supplied to the second main surface of the substrate. A seventh aspect is the substrate processing method according to any one of the fourth to sixth aspects, in which in the drying liquid supply step, while the heat medium having a temperature equal to or more than a boiling point of the drying liquid is supplied to the second main surface of the substrate, the drying liquid is supplied at a flow rate at which the substrate temperature of the first main surface of the substrate is less than the boiling point. An eighth aspect is the substrate processing method according to any one of the fourth to seventh aspects, in which the heat medium includes liquid, in the drying liquid supply step, the drying liquid is supplied to the first main surface of the substrate in a state in which a shutoff plate having a facing surface facing the first main surface of the substrate is located at a shutoff processing position, and during the predetermined period in the drying step, in a state where the shutoff plate is moved to a drying position closer to the first main surface than the shutoff processing position, inert gas is supplied from a gas dispense port at a central portion of the shutoff plate toward the first main surface of the substrate. A ninth aspect is the substrate processing method according to the eighth aspect, in which during the predetermined period, the heated inert gas is