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EP-4738428-A1 - SUBSTRATE PROCESSING METHOD

EP4738428A1EP 4738428 A1EP4738428 A1EP 4738428A1EP-4738428-A1

Abstract

Provided is a technique capable of effectively reducing a collapse rate of a pattern of a substrate. A substrate processing method includes a holding step, a liquid supply step, a drying liquid supply step, and a drying step. In the holding step, a substrate having a first main surface on which a pattern is formed and a second main surface on a side opposite to the first main surface is held. In the liquid supply step, a processing liquid is supplied to the first main surface of the substrate. In the drying liquid supply step, after the liquid supply step, a drying liquid is supplied to the first main surface of the substrate at a flow rate at which a temperature of the first main surface of the substrate is lower than a boiling point (bp) of the drying liquid while at least a portion of the second main surface of the substrate is heated to a temperature equal to or higher than the boiling point (bp) of the drying liquid. In the drying step, the substrate is dried after the drying liquid supply step.

Inventors

  • Takematsu Yusuke
  • KATO MASAHIKO
  • ISHIZU TAKAAKI
  • NAKANO AKIYOSHI
  • SHIRAO TAKASHI

Assignees

  • SCREEN Holdings Co., Ltd.

Dates

Publication Date
20260506
Application Date
20240626

Claims (7)

  1. A substrate processing method comprising: a holding step of holding a substrate having a first main surface on which a pattern is formed and a second main surface on a side opposite to said first main surface; a liquid supply step of supplying a processing liquid to said first main surface of said substrate; a drying liquid supply step of supplying a drying liquid to said first main surface of said substrate at a flow rate at which a temperature of said first main surface of said substrate is lower than a boiling point of said drying liquid while heating at least a portion of said second main surface of said substrate to a temperature equal to or higher than the boiling point of said drying liquid, after said liquid supply step; and a drying step of drying said substrate after said drying liquid supply step.
  2. The substrate processing method according to claim 1, wherein in said drying liquid supply step, a heat medium having a temperature equal to or higher than the boiling point of said drying liquid is supplied to said second main surface of said substrate.
  3. The substrate processing method according to claim 1 or 2, wherein in said drying liquid supply step, a peripheral edge portion of said second main surface of said substrate is heated to a temperature equal to or higher than the boiling point of said drying liquid.
  4. The substrate processing method according to claim 3, wherein in said drying liquid supply step, a central portion of said second main surface of said substrate is heated to a temperature lower than the temperature of said peripheral edge portion of said second main surface.
  5. The substrate processing method according to claim 4, wherein in said drying liquid supply step, a heat medium having a first medium temperature is supplied to said peripheral edge portion of said second main surface of said substrate, and a heat medium having a second medium temperature lower than said first medium temperature is supplied to said central portion of said second main surface of said substrate.
  6. The substrate processing method according to claim 1 or 2, wherein in said drying liquid supply step, said second main surface of said substrate is heated only during a latter time period of a drying liquid supply time during which said drying liquid is supplied.
  7. The substrate processing method according to claim 1 or 2, wherein in said drying liquid supply step, the temperature of said first main surface of said substrate is 60 degrees Celsius or higher and lower than the boiling point of said drying liquid.

Description

TECHNICAL FIELD The present disclosure relates to a substrate processing method. BACKGROUND ART Conventionally, a single wafer type substrate processing apparatus for processing a substrate has been disclosed (for example, Patent Document 1). In Patent Document 1, a substrate processing apparatus supplies a rinse liquid to a substrate, then supplies isopropyl alcohol having a surface tension lower than that of the rinse liquid to the substrate, and then dries the substrate. As a result, collapse of patterns of the substrate during drying is suppressed. PRIOR ART DOCUMENT PATENT DOCUMENT Patent Document 1: Japanese Patent Application Laid-Open No. 2015-23182 SUMMARY PROBLEM TO BE SOLVED BY THE INVENTION However, Patent Document 1 does not consider a temperature of isopropyl alcohol. For this reason, a collapse rate of a pattern cannot be effectively reduced. Therefore, an object of the present disclosure is to provide a technique capable of effectively reducing the collapse rate of the pattern of a substrate. MEANS TO SOLVE THE PROBLEM A first aspect is a substrate processing method including: a holding step of holding a substrate having a first main surface on which a pattern is formed and a second main surface on a side opposite to the first main surface; a liquid supply step of supplying a processing liquid to the first main surface of the substrate; a drying liquid supply step of supplying a drying liquid to the first main surface of the substrate at a flow rate at which a temperature of the first main surface of the substrate is lower than a boiling point of the drying liquid while heating at least a portion of the second main surface of the substrate to a temperature equal to or higher than the boiling point of the drying liquid, after the liquid supply step; and a drying step of drying the substrate after the drying liquid supply step. A second aspect is the substrate processing method according to the first aspect, in which in the drying liquid supply step, a heat medium having a temperature equal to or higher than the boiling point of the drying liquid is supplied to the second main surface of the substrate. A third aspect is the substrate processing method according to the first or second aspect, in which in the drying liquid supply step, a peripheral edge portion of the second main surface of the substrate is heated to a temperature equal to or higher than the boiling point of the drying liquid. A fourth aspect is the substrate processing method according to the third aspect, in which in the drying liquid supply step, a central portion of the second main surface of the substrate is heated to a temperature lower than the temperature of the peripheral edge portion of the second main surface. A fifth aspect is the substrate processing method according to the fourth aspect, in which in the drying liquid supply step, a heat medium having a first medium temperature is supplied to the peripheral edge portion of the second main surface of the substrate, and a heat medium having a second medium temperature lower than the first medium temperature is supplied to the central portion of the second main surface of the substrate. A sixth aspect is the substrate processing method according to any one of the first to fifth aspects, in which in the drying liquid supply step, the second main surface of the substrate is heated only during a latter time period of a drying liquid supply time during which the drying liquid is supplied. A seventh aspect is the substrate processing method according to any one of the first to sixth aspects, in which in the drying liquid supply step, the temperature of the first main surface of the substrate is 60 degrees Celsius or higher and lower than the boiling point of the drying liquid. EFFECTS OF THE INVENTION According to the first aspect, in the drying liquid supply step, while at least a portion of the second main surface of the substrate is heated to a temperature equal to or higher than the boiling point of the drying liquid, the drying liquid is supplied at a flow rate at which the temperature of the first main surface of the substrate is lower than the boiling point. For this reason, boiling of the drying liquid can be more reliably suppressed while the temperature of the first main surface of the substrate is brought closer to the boiling point of the drying liquid, and adhesion of particles can be suppressed. Then, since the temperature of the first main surface is close to the boiling point, the drying liquid can be evaporated in a shorter time in a state where the surface tension is lower in the subsequent drying step. Therefore, the collapse rate of the pattern can be effectively reduced. According to the second aspect, the temperature of at least a portion of the second main surface of the substrate can be made equal to or higher than the boiling point of the drying liquid with a simple configuration. According to the third aspect, the collapse rate of the pattern in th