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EP-4738429-A1 - PROCESSING METHOD, PROCESSING DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND PROGRAM

EP4738429A1EP 4738429 A1EP4738429 A1EP 4738429A1EP-4738429-A1

Abstract

There is provided a technique capable of improving surface roughness of a film, including: (a) forming a second film, whose etching rate is a second etching rate that is equal to or lower than a first etching rate of a first film when a first gas capable of removing at least a portion of the first film is supplied, on the first film; and (b) supplying the first gas to the first film.

Inventors

  • OGAWA, ARITO

Assignees

  • Kokusai Electric Corporation

Dates

Publication Date
20260506
Application Date
20230629

Claims (19)

  1. A processing method, comprising: (a) forming a second film, whose etching rate is a second etching rate that is equal to or lower than a first etching rate of a first film when a first gas capable of removing at least a portion of the first film is supplied, on the first film; and (b) supplying the first gas to the first film.
  2. The processing method of Claim 1, wherein the second etching rate is lower than the first etching rate.
  3. The processing method of Claim 1, wherein (a) is performed before (b) or after (b).
  4. The processing method of Claim 1, wherein (a) and (b) are performed a predetermined number of times.
  5. The processing method of Claim 1, further comprising removing the first film by supplying the first gas after performing (a) and (b) a predetermined number of times.
  6. The processing method of Claim 1, wherein the first film is a film containing a metal element.
  7. The processing method of Claim 6, wherein the metal element is a transition metal element.
  8. The processing method of Claim 1, wherein the second film contains an element selected from Group 13 elements, Group 14 elements, Group 15 elements, or Group 16 elements.
  9. The processing method of Claim 1, wherein the first film and the second film are formed in a process container.
  10. The processing method of Claim 1, wherein the first film and the second film are formed on a substrate.
  11. The processing method of Claim 1, wherein the first film is a polycrystalline film, and the second film is a film whose crystallinity is lower than the first film.
  12. The processing method of Claim 1, wherein the first film is a polycrystalline film, and the second film is an amorphous film.
  13. The processing method of Claim 1, wherein a thickness of the second film is thinner than a thickness of the first film.
  14. The processing method of Claim 1, wherein, in (a), the second film is formed by supplying a second gas to the first film in a state in which the second gas is decomposed.
  15. The processing method of Claim 14, wherein the state in which the second gas is decomposed includes a temperature equal to or higher than a decomposition temperature of the second gas.
  16. The processing method of Claim 14, wherein the state in which the second gas is decomposed is a state in which the first film is composed of a catalyst for the second gas.
  17. A processing apparatus, comprising: a first gas supply system configured to supply a first gas capable of removing at least a portion of a first film; and a controller configured to be capable of controlling the first gas supply system so as to perform a process comprising: (a) forming a second film, whose etching rate is a second etching rate that is equal to or lower than a first etching rate of the first film when the first gas is supplied, on the first film; and (b) supplying the first gas to the first film.
  18. A method of manufacturing a semiconductor device, comprising: (a) forming a second film, whose etching rate is a second etching rate that is equal to or lower than a first etching rate of a first film when a first gas capable of removing at least a portion of the first film is supplied, on the first film; and (b) supplying the first gas to the first film.
  19. A program that causes, by a computer, a processing apparatus to perform a process comprising: (a) forming a second film, whose etching rate is a second etching rate that is equal to or lower than a first etching rate of a first film when a first gas capable of removing at least a portion of the first film is supplied, on the first film; and (b) supplying the first gas to the first film.

Description

TECHNICAL FIELD The present disclosure relates to a processing method, a processing apparatus, a method of manufacturing a semiconductor device, and a program. BACKGROUND As a process of manufacturing a semiconductor device, a process may be performed in which a crystalline layer separation film is formed on the surface of a metal-containing film or abnormal growth nuclei on the surface of the metal-containing film are removed, thereby forming a plurality of layers of metal-containing films on a substrate (see, for example, Patent Document 1). [Prior Art Documents] [Patent Documents] Patent Document 1: International Laid-Open Publication No. 2021/053761 SUMMARY The present disclosure provides a technique capable of improving the roughness of the surface (hereinafter referred to as "surface roughness") of a film. According to embodiments of the present disclosure, there is provided a technique including: (a) forming a second film, whose etching rate is a second etching rate that is equal to or lower than a first etching rate of a first film when a first gas capable of removing at least a portion of the first film is supplied, on the first film; and (b) supplying the first gas to the first film. According to the present disclosure, it is possible to improve the surface roughness of a film. BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a longitudinal cross-sectional view schematically illustrating a vertical process furnace of a substrate processing apparatus according to embodiments of the present disclosure.FIG. 2 is a schematic transverse cross-sectional view taken along line A-A in FIG. 1.FIG. 3 is a schematic configuration diagram of a controller of a substrate processing apparatus according to embodiments of the present disclosure, in which a control system of the controller is illustrated in a block diagram.FIG. 4 is a diagram illustrating a process flow according to embodiments of the present disclosure.FIG. 5 is a flowchart illustrating first cleaning processing in the process flow of FIG. 4.FIG. 6A is a diagram illustrating the state of a surface inside a reaction tube before cleaning processing is performed, and FIG. 6B is a diagram illustrating the state of the surface inside the reaction tube when the cleaning processing is performed in the state shown in FIG. 6A.FIG. 7A is a diagram illustrating the state of the surface inside the reaction tube before cleaning processing is performed, FIG. 7B is a diagram illustrating the state of the surface inside the reaction tube when treatment processing is performed in the state shown in FIG. 7A, and FIG. 7C is a diagram illustrating the state of the surface inside the reaction tube when the cleaning processing is performed in the state shown in FIG. 7B.FIG. 8 is a flowchart illustrating first cleaning processing according to embodiments of the present disclosure.FIG. 9 is a flowchart illustrating first cleaning processing according to embodiments of the present disclosure. DETAILED DESCRIPTION <Embodiments of Present Disclosure> Hereinafter, embodiments of the present disclosure will be described mainly with reference to FIGS. 1 to 5, 6A, 6B, and 7A to 7C. The drawings used in the following description are schematic, and the dimensional relationship of each element, the ratio of each element, and the like shown in the drawings may not match the actual ones. Further, even among the drawings, the dimensional relationship of each element, the ratio of each element, and the like may not match. (1) Configuration of Substrate Processing Apparatus As illustrated in FIG. 1, a process furnace 202 includes a heater 207 as a temperature adjuster (a heating portion). The heater 207 with a cylindrical shape and is supported by a holding plate to be vertically installed. The heater 207 also functions as an activator (an excitation portion) that thermally activates (excites) a gas. Inside the heater 207, a reaction tube 203 is disposed concentrically with the heater 207. The reaction tube 203 is made of, for example, a heat resistant material such as quartz (SiO2) or silicon carbide (SiC) and with a cylindrical shape, an upper end of which is closed and a lower end of which is opened. A manifold 209 is disposed concentrically with the reaction tube 203 below the reaction tube 203. The manifold 209 is made of, for example, a metal material such as stainless steel (SUS) and with a cylindrical shape, upper and lower ends of which are opened. The upper end of the manifold 209 engages with the lower end of the reaction tube 203 and is configured to support the reaction tube 203. An O-ring 220a as a seal is provided between the manifold 209 and the reaction tube 203. Similar to the heater 207, the reaction tube 203 is vertically installed. A process container (reaction container) is mainly composed of the reaction tube 203 and the manifold 209. A process chamber 201 is formed in a cylindrical hollow portion of the process container. The process chamber 201 is configured to be capabl