EP-4739040-A1 - REFLECTIVE OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Abstract

A reflection type optical semiconductor device includes a light-emitting element chip (2), a light-receiving element chip (1), and a mounting part (3), in which the light-receiving element chip (1) is mounted to the mounting part (3) by means of an insulating member (12), the light-emitting element chip (2) is mounted to a mounting part electrode (13C) disposed inside a through hole (14) of the light-receiving element chip (1) by means of a conductive member (11), and the conductive member (11) is covered by the insulating member (12); and a method of manufacturing a reflection type optical semiconductor device includes applying an insulating member (12) to a mounting part (3) to which a light-emitting element chip (2) is connected and mounted by means of a conductive member (11), placing a light-receiving element chip (1) onto the insulating member (12), pressing the light-receiving element chip (1), and covering the conductive member (11) by means of the pushed-out insulating member (12).

Inventors

• OHNO, FUMIAKI
• FUJII, YOSHIO
• KATO, MASAYUKI
• TANAKA, RYOSUKE

Assignees

• Nisshinbo Micro Devices Inc.

Dates

Publication Date

20260506

Application Date

20230627

Claims (6)

1. A reflection type optical semiconductor device comprising: a light-emitting element chip comprising a light-emitting element and a light-emitting element electrode; a light-receiving element chip comprising a light-receiving element, a light-receiving element electrode, a light-emitting element wiring connected to the light-emitting element electrode, and a through hole in which the light-emitting element chip is disposed; and a mounting part in which a mounting part electrode to be connected to any of the light-emitting element electrode, the light-receiving element electrode, and the light-emitting element wiring is disposed, wherein the light-receiving element chip, in which the light-receiving element electrode and the light-emitting element wiring are disposed on a light-receiving surface, is mounted on the mounting part by means of an insulating member; wherein the light-emitting element chip, in which the light-emitting element electrode is disposed on each of a light-emitting surface and a mounting surface, is mounted on the mounting part by connecting the light-emitting element electrode on the mounting surface to the mounting part electrode disposed inside the through hole by means of a conductive member, wherein the conductive member is covered by the insulating member mounting the light-receiving element chip on the mounting part; wherein the light-emitting element electrode on the light-emitting surface in the light-emitting element chip is connected to the light-emitting element wiring by means of a metal wire; and wherein the light-receiving element electrode and the light-emitting element wiring are each connected to the mounting part electrode by means of a metal wire.
2. The reflection type optical semiconductor device of claim 1, wherein the conductive member contains silver, and the insulating member is composed of a material impermeable to a sulfurizing gas.
3. A method of manufacturing a reflection type optical semiconductor device, the method comprising: a first step of mounting a light-emitting element chip comprising a light-emitting element and, on a light-emitting surface and a mounting surface, a light-emitting element electrode to a mounting part by connecting the light-emitting element electrode disposed on the mounting surface to a mounting part electrode of the mounting part by means of a conductive member; a second step of applying an insulating member to an area in the mounting part where a light-receiving element chip is disposed; a third step of placing the light-receiving element chip comprising a light-receiving element, a light-receiving element electrode, a light-emitting element wiring to be connected to the light-emitting element electrode, and a through hole to the mounting part with the insulating member applied thereto, in a manner that the light-emitting element chip is disposed inside the through hole; a fourth step of pressing the insulating member by means of the light-receiving element chip, pushing out the insulating member from between the light-receiving element chip and the mounting part, and covering the conductive member exposed to the inside of the through hole by means of the pushed-out insulating member; a fifth step of curing the insulating member to mount the light-receiving element chip to the mounting part; and a sixth step of connecting, by means of a metal wire, the light-emitting element electrode disposed on the light-emitting surface of the light-emitting element chip and the light-emitting element wiring disposed on the light-receiving surface of the light-receiving element chip, as well as the light-receiving element electrode disposed on the light-receiving surface of the light-receiving element chip and the light-emitting element wiring to the mounting part electrode, respectively.
4. The method of manufacturing a reflection type optical semiconductor device of claim 3, wherein the conductive member contains silver, and the insulating member is composed of a material impermeable to a sulfurizing gas.
5. The method of manufacturing a reflection type optical semiconductor device of claim 3 or 4, wherein the pressing on the insulating member by the light-receiving element chip in the fourth step is performed until a position in a height direction of an upper surface of the light-receiving element chip becomes equal to a position in a height direction of an upper surface of the light-emitting element chip.
6. The method of manufacturing a reflection type optical semiconductor device of claim 3 or 4, wherein the metal wire connecting the light-emitting element electrode and the light-emitting element wiring in the sixth step is disposed so as not to block light emitted from the light-emitting element.

Description

TECHNICAL FIELD The present invention relates to a reflection type optical semiconductor device composed of a light-emitting element chip comprising a light-emitting element and a light-receiving element chip comprising a light-receiving element, and a manufacturing method thereof. BACKGROUND ART A reflection type optical sensor used in a reflection type encoder is made to have a configuration in which a light emitted from a light-emitting element provided to a reflection type optical semiconductor device is reflected by a reflector disposed so as to face the reflection type optical semiconductor device, and the light incidents to a light-receiving element, so that a detection signal can be obtained. Generally, in the case where a reflection type optical semiconductor device is mounted on a mounting part, a configuration is made in a manner that a light-emitting element chip is stacked on a light-receiving element chip and the light-receiving element chip is mounted to the mounting part (Patent Document 1, for example), or alternatively, a configuration is made in a manner that a light-receiving element chip comprising a through hole and a light-emitting element chip disposed inside the through hole are mounted to the mounting part (Patent Document 2, for example). PRIOR ART DOCUMENT Patent Document Patent Document 1: JP 2009-182028 APatent Document 2: JP 2005-121593 A SUMMARY OF THE INVENTION PROBLEM TO BE SOLVED BY THE INVENTION FIG. 8 is an explanation view showing an example of a reflection type optical semiconductor device having a configuration in which a light-emitting element chip 2 is stacked on a light-receiving element chip 1A and the light-receiving element chip 1A is mounted to a mounting part 3A. On the light-receiving element chip 1A, a light-receiving element array 5 composed of a plurality of light-receiving elements 4 is disposed. The light-receiving element 4 can be composed of a photodiode, for example. A cathode or an anode of a photodiode is connected to a light-receiving element electrode 6 disposed on an upper surface (light-receiving surface) of a light-receiving element chip 1A by means of a wiring or the like (not shown), respectively. A light-emitting element is disposed on the light-emitting element chip 2. The light-emitting element can be composed of a light-emitting diode, for example. On an upper surface (light-emitting surface) of the light-emitting element chip 2, a light-emitting portion 7 from which a light is emitted and a light-emitting element electrode 8 connected to a cathode of the light-emitting diode are disposed, and on the lower surface (mounting surface) of the light-emitting element chip 2, a light-emitting element electrode 8A connected to an anode of the light-emitting diode is disposed. The light-emitting element electrode 8 is connected to a light-emitting element wiring 9 disposed on the light-receiving surface of the light-receiving element chip 1A by means of a metal wire 10, the light-emitting element electrode 8A is connected to a light-emitting element wiring 9A disposed on the light-receiving surface of the light-receiving element chip 1A by means of a conductive member 11 composed of a silver paste or the like, for example, and the light-emitting element chip 2 is stacked on the light-receiving element chip 1A. The light-receiving element chip 1A on which the light-emitting element chip 2 is stacked is glued and mounted to a mounting part 3A composed of an organic substrate or the like, for example, by means of an insulating member 12 that becomes an adhesive. On the mounting part 3A, mounting part electrodes 13, 13A are disposed, in which each mounting part electrode 13 is connected to any of the light-receiving element electrode 6 and the light-emitting element wiring 9 disposed on the light-receiving surface of the light-receiving element chip 1A, and the mounting part electrode 13A is connected to the light-emitting element wiring 9A, by means of the metal wire 10. FIG. 9 is an explanation view showing another example of the reflection type optical semiconductor device having a configuration in which a light-receiving element chip 1B comprising a through hole 14 and a light-emitting element chip 2 disposed inside the through hole 14 are mounted to a mounting part 3B. On the light-receiving element chip 1B, as similar to the light-receiving element chip 1A shown in FIG. 8, a light-receiving element array 5 composed of a plurality of light-receiving elements 4, a light-receiving element electrode 6, and a light-emitting element wiring 9 are disposed. Further, unlike the light-receiving element chip 1A, the light-receiving element chip 1B is made to have a configuration in which a light-emitting element wiring 9A is not disposed and the through hole 14 is disposed at the center thereof. The light-emitting element chip 2 is made to have a similar configuration to the light-emitting element chip 2 shown in FIG. 8. As shown in FIG. 9, the light-emit