EP-4739041-A1 - BIFACIAL SOLAR CELL, BATTERY MODULE AND PHOTOVOLTAIC SYSTEM

EP4739041A1EP 4739041 A1EP4739041 A1EP 4739041A1EP-4739041-A1

Abstract

The present application is applicable to the technical field of solar cells. Arranged are a double-sided solar cell (100), a cell assembly (200) and a photovoltaic system (1000). In the double-sided solar cell (100), a silicon substrate (10) has a first surface (11) and a second surface (12) opposite to each other. A first doped layer (20) is located on the first surface (11). The first doped layer (20) has at least one first electrode arrangement region (21). A plurality of first barrier layers (30) are located on the first electrode arrangement regions (21) and is arranged at intervals in a first predetermined direction, so that the first electrode arrangement region (21) includes a first blocked region (212) blocked by the first barrier layer (30) and a first non-blocked region (211) not blocked by the first barrier layer (30). A first passivation film layer (40) covering the first barrier layer (30) and the first doped layer (20). A first finger electrode (50) is arranged in the first electrode arrangement region (21) and located above the first doped layer (20) and the first barrier layer (30). The first finger electrode (50) is made of a burn-through paste. At the first blocked region (212), the first finger electrode (50) penetrates through the first passivation film layer (40) to be in contact with the first barrier layer (30) and to be not in contact with the first doped layer (20); and at the first non-blocked region (211), the first finger electrode (50) penetrates through the first passivation film layer (40) to be in contact with the first doped layer (20).

Inventors

WANG, YONGQIAN
ZHANG, JIANJUN
YANG, Xinqiang
CHEN, GANG

Assignees

Zhejiang Aiko Solar Energy Technology Co., Ltd.

Dates

Publication Date: 20260506
Application Date: 20240416

Claims (20)

A double-sided solar cell, comprising: a silicon substrate, having a first surface and a second surface opposite to each other; a first doped layer located on the first surface, the first doped layer has a plurality of first electrode arrangement regions; a plurality of first barrier layers located on the first electrode arrangement region, wherein the plurality of the first barrier layers are arranged at intervals in a first predetermined direction, so that the first electrode arrangement region comprises a first blocked region blocked by the first barrier layer and a first non-blocked region not blocked by the first barrier layer; a first passivation film layer covering the first barrier layer and the first doped layer; a plurality of first finger electrodes extending in the first predetermined direction, the first finger electrode being arranged in the first electrode arrangement region and located above the first doped layer and the first barrier layer, the first finger electrode being made of a burn-through paste; wherein at the first blocked region, the first finger electrode penetrates through the first passivation film layer to be in contact with the first barrier layer and to be not in contact with the first doped layer; and at the first non-blocked region, the first finger electrode penetrates through the first passivation film layer to be in contact with the first doped layer.
The double-sided solar cell according to claim 1, wherein a first tunneling layer is arranged between the first doped layer and the first surface.
The double-sided solar cell according to claim 1, wherein a dielectric layer is located between the first doped layer and the first barrier layer; the first barrier layer is stacked on the dielectric layer and located between the dielectric layer and the first passivation film layer; and the first barrier layer is insulated from the first doped layer by the dielectric layer.
The double-sided solar cell according to claim 3, wherein the dielectric layer comprises at least one or more combinations of a borosilicate glass film layer, a phosphosilicate glass film layer and a borophosphosilicate glass film layer.
The double-sided solar cell according to claim 1, wherein the first barrier layer comprises at least one of a borosilicate glass film layer, a phosphosilicate glass film layer, a borophosphosilicate glass film layer and a third doped layer, and a polarity of the third doped layer is opposite to that of the first doped layer.
The double-sided solar cell according to claim 1, wherein the first doped layer is a P-type doped layer, and the first barrier layer is an N-type doped layer.
The double-sided solar cell according to claim 1, wherein a bonding tension between the first finger electrode and the first barrier layer is greater than a bonding tension between the first finger electrode and the first doped layer.
The double-sided solar cell according to claim 1, wherein a bonding tension between the first barrier layer and the first passivation film layer is greater than a bonding tension between the first doped layer and the first passivation film layer.
The double-sided solar cell according to claim 8, further comprising a plurality of solder pads connected to the first finger electrode, wherein each of the solder pad is arranged on the first passivation film layer and at least partially located above the first barrier layer.
The double-sided solar cell according to claim 9, wherein at least one of the solder pad penetrates through the first passivation film layer to contact the first barrier layer, and a bonding tension between the each of the solder pad and the first barrier layer is greater than a bonding tension between the each of the solder pad and the first doped layer.
The double-sided solar cell according to claim 9, wherein a projected area of each of the first barrier layer on the silicon substrate is greater than or equal to a projected area of the each of the solder pad on the silicon substrate, and the each of the solder pad is completely located within a projection region of the first barrier layer.
The double-sided solar cell according to claim 1, wherein in the first predetermined direction, a ratio of a length of the first finger electrode being in contact with the first doped layer to a total length of the first finger electrode is 30-80%.
The double-sided solar cell according to claim 12, wherein in the first predetermined direction, the ratio between the length of the first finger electrode being in contact with the first doped layer to the total length of the first finger electrode is 40-60%.
The double-sided solar cell according to claim 1, wherein the first surface has a plurality of first regions and a plurality of second regions which are sequentially and alternately arranged; the first doped layer is arranged on the first region and do not cover the second region; and the plurality of the first barrier layers are arranged above the first doped layer on at least one the first region.
The double-sided solar cell according to claim 14, wherein a ratio of an area of the first region to an area of the first surface is less than 8%.
The double-sided solar cell according to any one of claims 1 to 15, wherein the double-sided solar cell further comprises: a second doped layer arranged on the second surface, the polarity of the second doped layer being opposite to the polarity to the first doped layer, and the second doped layer has a plurality of second electrode arrangement regions; a second passivation film layer arranged on the second doped layer; and a plurality of second finger electrodes arranged in the second electrode arrangement region and located on the second doped layer, the second finger electrode at least partially burns through the second passivation layer to be in contact with the second doped layer.
The double-sided solar cell according to claim 16, wherein the double-sided solar cell further comprises a plurality of second barrier layers located on the second electrode arrangement region, and the plurality of the second barrier layers is stacked on the second doped layer and is arranged at intervals in a second predetermined direction, so that the second electrode arrangement region comprises a second blocked region blocked by the second barrier layer and a second non-blocked region not blocked by the second barrier layer; wherein the second finger electrode extends in the second predetermined direction and is located above the second doped layer and the second barrier layer; at the second blocked region, the second finger electrode penetrates through the second passivation film layer to be in contact with the second barrier layer and to be not in contact with the second doped layer; and at the second non-blocked region, the second finger electrode penetrates through the second passivation film layer to be in contact with the second doped layer.
The double-sided solar cell according to claim 17, wherein the second doped layer is a borosilicate glass film layer or a phosphorosilicate glass film layer.
The double-sided solar cell according to claim 17, wherein a second tunneling layer is arranged between the second doped layer and the second surface.
The double-sided solar cell according to claim 16, wherein the second surface is arranged a plurality of third regions and a plurality of fourth regions which are sequentially and alternately arranged, and the second doped layer is arranged on the third region and do not cover the fourth region.

Description

PRIORITY INFORMATION The present application claims the priority and benefit of patent application 202311780305.4, filed with the China National Intellectual Property Administration on 22 December 2023, which are incorporated in their entireties herein by reference. Technical Field The present application relates to the technical field of solar cells, and in particular, to a double-sided solar cell, a cell assembly, and a photovoltaic system. Background Solar cell power generation is a sustainable source of clean energy, which can convert sunlight into electrical energy using the photovoltaic effect of a semiconductor p-n junction. Currently, in a double-sided solar cell (for example, a Topcon solar cell), a doped layer is formed on the front side of the silicon sheet, and a doped layer of another polarity is formed on the back side, and at the same time, both the front side and the back side are arranged with a passivation film layer and a finger. In the related art, the finger may be made of a non-burn-through paste or a burn-through paste, and when the non-burn-through paste is used, perforation needs to be performed on the passivation film layer, The process thereof is complicated and laser damage is easily generated, and in order to avoid this problem, a through-firing paste is usually used to manufacture the finger, In the process of printing the paste to form an electrode, the paste of the finger penetrates through the passivation film layer and directly contacts the doped layer below. Summary The present application provides a double-sided solar cell, a cell string, a cell assembly and a photovoltaic system. The present application is realized as follows: the double-sided solar cell of the embodiment of the present application includes: a silicon substrate, having a first surface and a second surface opposite to each other;a first doped layer located on the first surface, the first doped layer having a plurality of first electrode arrangement regions;a plurality of first barrier layers located on the first electrode arrangement region, wherein the plurality of the first barrier layers are arranged at intervals in a first predetermined direction, so that the first electrode arrangement region includes a first blocked region blocked by the first barrier layer and a first non-blocked region not blocked by the first barrier layer;a first passivation film layer covering the first barrier layer and the first doped layer;a first finger electrode extending in the first predetermined direction, the first finger electrode being arranged in the first electrode arrangement region and located above the first doped layer and the first barrier layer, the first finger electrode being made of a burn-through paste;wherein at the first blocked region, the first finger electrode penetrates through the first passivation film layer to be in contact with the first barrier layer and to be not in contact with the first doped layer; and at the first non-blocked region, the first finger electrode penetrates through the first passivation film layer to be in contact with the first doped layer. The present application further provides a cell assembly. The cell assembly includes a plurality of described double-sided solar cells. The present application further provides a photovoltaic system. The photovoltaic system includes the described cell assembly. Additional aspects and advantages of some embodiments of the present application will be given in part in the following description, become apparent in part from the following description, or be learned from the practice of some embodiments of the present application. Brief Description of the Drawings Fig. 1 is a schematic structural diagram of a photovoltaic system according to an embodiment of the present application;Fig. 2 is a schematic diagram of a planar structure of a double-sided solar cell according to an embodiment of the present application;Fig. 3 is a schematic cross-sectional diagram of a double-sided solar cell in Fig. 2 along the line III-III;Fig. 4 is a schematic cross-sectional diagram of a double-sided solar cell in Fig. 2 along the line IV-IV;Fig. 5 is another schematic cross-sectional diagram of a double-sided solar cell in Fig. 2 along the line III-III;Fig. 6 is yet another schematic cross-sectional diagram of a double-sided solar cell in Fig. 2 along the line III-III;Fig. 7 is another schematic cross-sectional diagram of a double-sided solar cell in Fig. 2 along the line IV-IV;Fig. 8 is still another schematic cross-sectional diagram of a double-sided solar cell in Fig. 2 along the line III-III;Fig. 9 is still another schematic cross-sectional diagram of a double-sided solar cell in Fig. 2 along the line III-III;Fig. 10 is still another schematic cross-sectional diagram of a double-sided solar cell in Fig. 2 along the line IV-IV. Detailed Description of the Embodiments To make the objectives, technical solutions, and advantages of the present application clear