EP-4739065-A2 - SEMICONDUCTOR DEVICE
Abstract
A semiconductor device includes at least one terminal, and the terminal includes a cylindrical holder having electrical conductivity and a metal pin inserted in the holder. The semiconductor device further includes a terminal support supporting the holder, and a sealing resin covering a part of the holder and covering the terminal support. The sealing resin includes a resin obverse surface facing a first side in a thickness direction. The holder includes a first surface located at one end on the first side in the thickness direction and a first outer side surface extending in the thickness direction. The first surface is located at a position different from the resin obverse surface in the thickness direction. The first outer side surface is in contact with the sealing resin. The metal pin protrudes beyond the resin obverse surface toward the first side in the thickness direction.
Inventors
- TANIKAWA, KOHEI
- IKEDA, Daiki
Assignees
- Rohm Co., Ltd.
Dates
- Publication Date
- 20260506
- Application Date
- 20230413
Claims (11)
- A semiconductor device (A1) comprising: at least one terminal (45) including a cylindrical holder (451) having electrical conductivity and a metal pin (452) inserted in the holder (451); a terminal support (48) including a first insulating layer (481), and a metal layer (482) formed on an upper surface of the first insulating layer (481), the metal layer (482) supporting the holder (451); a support substrate (3) including a second insulating layer (31), a support conductor (32), and a reverse-surface metal layer (33); and a sealing resin (8) covering a part of the holder (451), a part of the support substrate (3), and the terminal support (48), wherein the sealing resin (8) includes a resin obverse surface (81) facing a first side (z1) in a thickness direction (z), the terminal support (48) is interposed between the support substrate (3) and the at least one terminal (45), the holder (451) includes a first surface (454a) located at one end on the first side (z1) in the thickness direction (z) and a first outer side surface (453a) extending in the thickness direction (z), the first surface (454a) is located at a position different from the resin obverse surface (81) in the thickness direction (z), the first outer side surface (453a) is in contact with the sealing resin (8), the metal pin (452) protrudes beyond the resin obverse surface (81) toward the first side (z1) in the thickness direction (z), the holder (451) includes a tubular portion (453) extending in the thickness direction (z) and a first flange portion (454) connected to an end on the first side (z1) in the thickness direction (z) of the tubular portion (453), the first flange portion (454) includes the first surface (454a) facing the first side (z1) in the thickness direction (z) and a second surface (454b) located on a second side (z2) in the thickness direction (z) relative to the first surface (454a) and facing the second side (z2) in the thickness direction (z), the tubular portion (453) includes the first outer side surface (453a), and the first outer side surface (453a) and the second surface (454b) are entirely in contact with the sealing resin (8), the sealing resin (8) includes a first recess (810) that is recessed from the resin obverse surface (81) toward the second side (z2) in the thickness direction (z), the first flange portion (454) is located on the second side (z2) in the thickness direction (z) relative to the resin obverse surface (81), the first recess (810) overlaps with entirety of the tubular portion (453) as viewed in the thickness direction (z), and the first recess (810) includes a recess end edge (813) that is located on the second side (z2) in the thickness direction (z) and in contact with the first surface (454a).
- The semiconductor device (A1) according to claim 1, wherein at least a part of the first surface (454a) is exposed from the sealing resin (8).
- The semiconductor device (A1) according to claim 2, wherein the first surface (454a) is entirely exposed from the sealing resin (8), the first recess (810) includes a recess inner side surface (811) connected to the resin obverse surface (81), and a recess bottom surface (812) connected to an end on the second side (z2) in the thickness direction (z) of the recess inner side surface (811) and facing the first side (z1) in the thickness direction (z), and the recess bottom surface (812) surrounds the first surface (454a) as viewed in the thickness direction (z).
- The semiconductor device (A1) according to claim 1, wherein the first recess (810) includes a tapered inner side surface (815) connected to the recess end edge (813), and the tapered inner side surface (815) is inclined such that an inner diameter thereof increases as it extends toward the first side (z1) in the thickness direction (z).
- The semiconductor device (A1) according to claim 1, wherein an outer periphery of the first flange portion (454) surrounds the first recess (810) as viewed in the thickness direction (z).
- The semiconductor device (A1) according to any one of claims 1 to 5, wherein a first dimension (L1), which is a distance between the resin obverse surface (81) and the first surface (454a) in the thickness direction (z), is smaller than a second dimension (L2), which is a length of the holder (451) in the thickness direction (z).
- The semiconductor device (A1) according to claim 6, wherein a ratio of the first dimension (L1) to the second dimension (L2) is equal to or greater than 1/3.
- The semiconductor device (A1) according to claim 1, further comprising a first resin fill portion (89) loaded in the first recess (810).
- The semiconductor device (A1) according to claim 1, further comprising at least one semiconductor element (10A, 10B) electrically connected to the at least one terminal (45), wherein the at least one semiconductor element (10A, 10B) is supported on the support conductor (32).
- The semiconductor device (A1) according to claim 9, wherein the at least one terminal (45) is a control terminal (45) for controlling the at least one semiconductor element (10A, 10B).
- The semiconductor device (A1) according to claim 10, wherein the support conductor (32) includes a first conductive portion (32A) and a second conductive portion (32B) spaced apart from each other in a first direction (x) orthogonal to the thickness direction (z), the at least one semiconductor element (10A, 10B) includes a first switching element (10A) bonded to the first conductive portion (32A) and a second switching element (10B) bonded to the second conductive portion (32B), the control terminal (45) includes a first control terminal (46A, 46B, 46C, 46D, 46E) for controlling the first switching element (10A) and a second control terminal (47A, 47B, 47C, 47D) for controlling the second switching element (10B).
Description
TECHNICAL FIELD The present disclosure relates to a semiconductor device. BACKGROUND ART Semiconductor devices with power switching elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) or IGBTs (Insulated Gate Bipolar Transistors) are conventionally known. These semiconductor devices are used in a variety of electronic equipment, including industrial equipment, home appliances, information terminals, and automotive equipment. A conventional semiconductor device (power module) is disclosed in Patent Document 1. The semiconductor device disclosed in Patent Document 1 includes a semiconductor element and a support substrate (ceramic substrate). The semiconductor element is, for example, an IGBT made of Si (silicon). The support substrate supports the semiconductor element. The support substrate includes an insulating base and a conductive layer provided on each side of the base. The base is made of, for example, a ceramic material. The conductive layers are made of Cu (copper), for example. The semiconductor element is bonded to one of the conductive layers. PRIOR ART DOCUMENT Patent Document Patent Document 1: JP-A-2021-190505 SUMMARY OF THE INVENTION Problem to be Solved by the Invention In recent years, energy-saving, high-performance and miniaturization have been demanded of electronic equipment. To meet the demand, improved performance and miniaturization of semiconductor modules mounted in the electronic equipment are required. An object of the present disclosure is to provide a semiconductor device that is improved over conventional ones. In particular, in light of the above circumstances, an object of the present disclosure is to provide a semiconductor device suitable for improving the performance and miniaturization. A semiconductor device provided according to a first aspect of the present disclosure includes: at least one terminal including a cylindrical holder having electrical conductivity and a metal pin inserted in the holder; a terminal support supporting the holder; and a sealing resin covering a part of the holder and covering the terminal support. The sealing resin has a resin obverse surface facing a first side in the thickness direction. The holder has a first surface located at one end on the first side in the thickness direction and a first outer side surface extending in the thickness direction. The first surface is located at a position different from the resin obverse surface in the thickness direction. The first outer side surface is in contact with the sealing resin. The metal pin protrudes beyond the resin obverse surface toward the first side in the thickness direction. A semiconductor device provided according to a second aspect of the present disclosure includes: a support substrate including an obverse surface facing a first side in a thickness direction; at least one terminal including a holder disposed on the obverse surface and having electrical conductivity and a metal pin inserted in the holder; and a sealing resin including a resin obverse surface facing the first side in the thickness direction and covering at least a part of the support substrate. The holder of at least one of the at least one terminal is entirely exposed from the sealing resin. The metal pin protrudes beyond the resin obverse surface toward the first side in the thickness direction. Advantages of the Invention With the above-described configuration, a semiconductor device having a configuration favorable for improving the performance and reducing the size is provided. Other features and advantages of the present disclosure will become apparent from the detailed description given below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure.Fig. 2 is a perspective view showing relevant portions of the semiconductor device according to the first embodiment of the present disclosure.Fig. 3 is a perspective view showing relevant portions of the semiconductor device according to the first embodiment of the present disclosure.Fig. 4 is a plan view of the semiconductor device according to the first embodiment of the present disclosure.Fig. 5 is a plan view showing relevant portions of the semiconductor device according to the first embodiment of the present disclosure.Fig. 6 is a side view showing relevant portions of the semiconductor device according to the first embodiment of the present disclosure.Fig. 7 is an enlarged plan view showing relevant portions of the semiconductor device according to the first embodiment of the present disclosure.Fig. 8 is a plan view showing relevant portions of the semiconductor device according to the first embodiment of the present disclosure.Fig. 9 is a plan view showing relevant portions of the semiconductor device according to the first embodiment of the present disclosure.Fig. 10 is a side view showing relevant