EP-4739066-A1 - A SEMICONDUCTOR DEVICE

Abstract

A semiconductor device is proposed, comprising a substrate, at least a first semiconductor die having a first die surface and a second die surface opposite to the first die surface, wherein the at least one semiconductor die is mounted with the first die surface on the substrate, and at least one heat transfer component comprising a spatial configuration composed of a first component face and a second component face spaced apart from each other defining a spatial enclosure comprising a heat transfer medium, wherein the at least one heat transfer component is in heat exchanging contact with the second die surface and the substrate.

Inventors

• GONG, WEI
• Cao, Pulong
• LIU, HUI

Assignees

• Nexperia B.V.

Dates

Publication Date

20260506

Application Date

20251029

Claims (8)

1. A semiconductor device comprising: a substrate; at least one first semiconductor die having a first die surface and a second die surface opposite to the first die surface, wherein the at least one semiconductor die is mounted with the first die surface on the substrate; at least one heat transfer component comprising a spatial configuration composed of a first component face and a second component face spaced apart from each other defining a spatial enclosure comprising a heat transfer medium, wherein the at least one heat transfer component is in heat exchanging contact with the second die surface and the substrate.
2. The semiconductor device according to claim 1, further comprising a further heat transfer component, wherein the further heat transfer component is arranged between the substrate and the first die surface of the at least one semiconductor die, being in heat exchanging contact.
3. The semiconductor device according to claim 2, further comprising at least a further semiconductor die, wherein the further heat transfer component is in heat exchanging contact with the second die surface of the at least further semiconductor die.
4. The semiconductor device according to any of the preceding claims, wherein each heat transfer component further comprises a porous condensing structure contained in the spatial enclosure for the heat exchanging medium.
5. The semiconductor device according to claim 4, wherein the porous condensing structure is mounted to the first component face.
6. The semiconductor device according to claim 4 or 5, wherein each heat transfer component is made of a heat conductive and electrically conductive material.
7. The semiconductor device according to any of the preceding claims, wherein each heat transfer component has a planar shape, wherein a thickness of the planar shape is less than 0.5 mm, preferably less than 0.33mm, most preferably less than 0.21mm.
8. The semiconductor device according to any of the preceding claims, wherein each component face has a thickness of less than 100 µm, preferably less than less than 50 µm, more preferably less than 10 µm.

Description

TECHNICAL FIELD The present disclosure relates to a semiconductor with improved thermal management. BACKGROUND OF THE DISCLOSURE Semiconductor devices are essential building blocks of modern electronics. While they offer incredible computational power or current control, they also generate significant amounts of heat. This heat can have significant consequences on the semiconductor device's reliability or performance. This heating effect is commonly known as resistive heating or Joule heating and is especially bad in semiconductor devices operating at high voltages, large current, or at high switching frequencies. The excessive heat can lead to degradation of the semiconductor device, thereby accelerating its aging and reducing its lifetime. In some cases, the heat can be so excessive that the device's noise increases or even that the materials start to degrade, resulting in catastrophic device failure. Accordingly, it is a goal of the present disclosure to provide an improved semiconductor package, which has an improved thermal management. SUMMARY OF THE DISCLOSURE The disclosure pertains to a semiconductor device comprising a substrate, at least a first semiconductor die having a first die surface and a second die surface opposite to the first die surface, wherein the at least one semiconductor die is mounted with the first die surface on the substrate, and at least one heat transfer component comprising a spatial configuration composed of a first component face 310 and a second component face 320 spaced apart from each other defining a spatial enclosure 350 comprising a heat transfer medium 390, wherein the at least one heat transfer component is in heat exchanging contact with the second die surface and the substrate. A semiconductor according to the disclosure is not only able to transfer current to the semiconductor die by means of the heat transfer component, but can also effectively transfer the heat away from the semiconductor die. Thereby, the semiconductor has an improved thermal management, but does not become bulky with additional heatsink or cooling elements, such that the overall size of the semiconductor die can be maintained. In the view of the current patent application, the wording "mounted" should thus be considered to define "being connected by some means", for instance by heat and/or electrically conductive glue or solder, but even by means of a heat transfer component, which in turn may be directing connected or could be connected by conductive glue or solder. A heat transfer component as defined by the disclosure may also been known in the art as vapor chambers. These elements are two-phase heat transfer devices that efficiently spread heat across a large, flat surface. Typically, they comprise two planar plates sealed around the edges filled with a heat transfer medium 390. The heat transfer component absorbs heat from the semiconductor die causing a portion of the first component face 310 to heat up. The heat transfer medium 390, in liquid state, on the inside of the spatial enclosure 350 at the first component face 310 side will then also heat up and evaporate. Subsequently, the vapors travels through the heat transfer component's enclosure to a cooler portion. There the vapors of the heat transfer medium 390 condensate releasing the absorbed heat, turning back into a liquid state, which liquid is directed back to the hot portion 330 of the heat transfer component. This process is a continuous, self-contained cycle, which efficiently moves heat from one portion of the heat transfer component to another. With the use of such a heat transfer component, the semiconductor device can manage its heat more effectively, such that the semiconductor die does not overheat, causing unwanted effect, like malfunctioning or even breakage. Furthermore, this allows for more efficient use of the entire semiconductor device's size to be coupled to even further heat sinks and such in the application that the semiconductor device may be utilized. To ensure that the size or bulkiness of the semiconductor device does not increase because of this improved heat management with a heat transfer component, the solution is to utilize the electric conductive properties of the heat transfer component as well. This way, both electricity and heat can be conducted, requiring minimal adjustment to the overall design of the semiconductor device, yet having maximum impact. Lastly, positioning an electrical and heat conductive heat transfer component on top of a semiconductor die, being connected to the substrate as well, ensures that the heat transfer component can act as a bond clip even improved thermal performance over standardized bond clips, but also allowing for higher current carrying capacity due to the increased (contact)size, and furthermore, the parasitic inductance may be removed. This all leads to improved reliability of the semiconductor device. In an example, the semiconductor device further comprises