EP-4739637-A1 - APPARATUS AND METHOD FOR THERMALLY TREATING A BODY TO BE THERMALLY TREATED

Abstract

The invention relates to an apparatus (100) for thermally treating a body (101, 102, 103) to be thermally treated, in particular for thermally connecting a first partial body (101) to a second partial body (102) at a boundary surface (104) formed between the first partial body (101) and the second partial body (102) to form a composite body (103). The apparatus (100) also comprises a casing body (105), a temperature-controllable chamber (108) inside a temperature-control unit (106), and a heating element (109), the casing body (105) being designed to contactlessly surround the body (101, 102, 103) to be thermally treated prior to, during and after the thermal treatment. The invention also relates to a method for thermally treating a body (101, 102, 103) to be thermally treated, and in particular for the high-temperature bonding of a first partial body (101) to a second partial body (102) to form a composite body (103) by means of the apparatus (100). The invention also relates to an optical element (609), in particular a reflective optical element, more particularly for reflecting EUV radiation (610), more particularly an optical element (609) which is temperature controlled via a channel (208) through which a media flows, in particular a temperature-controlled reflective optical element (609). The invention also relates to a semiconductor-technology system (700) having at least one optical element (609), in particular having a temperature-controlled optical element (609), more particularly having a temperature-controlled reflective optical element (609) which is temperature controlled via a channel (208) by means of one of the temperature-control devices (723-733).

Inventors

• SCHELLHORN, UWE

Assignees

• Carl Zeiss SMT GmbH

Dates

Publication Date

20260513

Application Date

20240610

Claims (1)

1. patent claims 1 ) Device (100) for thermally treating a body to be thermally treated (101, 102, 103), wherein the body to be thermally treated (101, 102, 103) is designed as - a monolithic body, - or a composite body (103), - or an arrangement of a first partial body (101) and a second partial body (102) contacting each other at an interface (104), wherein the device (100) further comprises - a casing body (105), - a temperature-controlled space (108) within a temperature control unit (106), - one or more heating elements (109), characterized in that - the casing body (105) encloses the body to be thermally treated (101, 102, 103) without contact both before, during and after the thermal treatment and - the casing body (105) consists of the same material as the body to be thermally treated (101, 102, 103). 2) Device (100) according to claim 1, characterized in that the casing body (105) takes on the outside the shape of a cylinder with an elliptical shape in the cross section of the cylinder with a numerical eccentricity in the range 0-0.1. 3) Device (100) according to one of the preceding claims, characterized in that each surface (107) of the casing body (105) has a distance of at least 0.1 mm and a distance of at most 30 mm from a surface (112, 113, 114) of the body to be thermally treated (101, 102, 103). 4) Device (100) according to one of the preceding claims, characterized in that the body to be thermally treated comprises an amorphous silicon-containing glass and/or a partially crystalline ceramic. 5) Device according to one of the preceding claims, characterized in that the body to be thermally treated comprises a titanium-doped quartz glass. 6) Method for thermally treating a body to be thermally treated (101, 102, 103), by means of the device (100) according to one of claims 1-5, comprising: - providing the body to be thermally treated (101, 102, 103), - arranging the body to be thermally treated (101, 102, 103) and a jacket body (105) in the temperature-controlled space (108) such that the jacket body (105) encloses the body to be thermally treated (101, 102, 103) without contact, - Thermally treating the body to be thermally treated (101, 102, 103), as well as the jacket body (105) arranged on the body to be thermally treated in the temperature-controlled space (108). 7) Method according to claim 7, characterized in that a thermal treatment comprises - a tempering process and/or - a high-temperature bonding process or stack sealing. 8) Method according to one of claims 7 or 8, characterized in that the body to be thermally treated (101, 102, 103) is formed from amorphous silicon-containing glass and/or from a partially crystalline ceramic. 9) Method according to one of claims 7 to 9, characterized in that the body to be thermally treated (101, 102, 103) is made of titanium-doped quartz glass. 10) Method according to claim 7 - 10, characterized in that after providing the body to be thermally treated (101, 102, 103), the body to be thermally treated (101, 102, 103) is processed on a surface by a physical and/or chemical processing method. 11 ) Method according to claim 7 - 11 , characterized in that an interface (104) between a first partial body (101 ) and a second partial body (102) is formed as - planar interface, - concave or convex interface, - as a freeform surface. 12)Procedure according to claim 12, characterized in that - a first structure (206) consisting of a groove (209) and a web (210) is formed in a first surface (204) of the first partial body (101) by physical and/or chemical processing and/or - a second structure (207) consisting of a groove (212) and a web (213) is formed in a second surface (205) of the second partial body (102) by physical and/or chemical processing, and - during thermal bonding of the first partial body (101) and the second partial body (102) to form a composite body (103) from the structure (206) located in the first surface (204) and/or the structure (207) located in the second surface (205), at least one continuous channel (208) is formed in the interior of the composite body (103). 13) Method according to one of claims 12 or 13, characterized in that a plurality of partial bodies (200) are joined together to form the composite body (103) using the stack sealing method, wherein the first partial body (101) and the second partial body (102) from the plurality of partial bodies (200) contact each other at the interface (104). 14)Procedure according to one of claims 7-14, characterized in that within the body to be thermally treated (101, 102, 103) - a first local temperature (301) of any first infinitesimal surface element (302) within any first cutting plane of a first constant height (305) and a second local temperature (303) of any second infinitesimal surface element (304) within the same arbitrary first cutting plane of a first constant height (305) differ by no more than 1 K, and - the first local temperature (301) and a third local temperature (307) of any third infinitesimal surface element (308) within any second cutting plane of a second constant height (306) have a temperature difference other than zero. 15)Procedure according to claim 15, characterized in that within the body to be thermally treated (101, 102, 103) - starting from the arbitrary first infinitesimal surface element (302) with the first local temperature (301) within the arbitrary first cutting plane of the first constant height (305) along a first normal (310) of the arbitrary first cutting plane of the first constant height (305) to the arbitrary third infinitesimal surface element (308) with the third local temperature (307) within the arbitrary second cutting plane of the second constant height (306), a gradient of a first local temperature profile (311) at an arbitrary height differs by a maximum of 5% from an averaged temperature gradient which is calculated over a corresponding temperature profile (311) over the entire height, and - starting from the arbitrary second infinitesimal surface element (304) with the second local temperature (303) within the arbitrary first cutting plane of the first constant height (305) along a second normal (312) of the arbitrary first cutting plane of the first constant height (305) to an arbitrary fourth infinitesimal surface element (314) with a fourth local temperature (309) within the arbitrary second cutting plane of the second constant height (306), a gradient of a second local temperature profile (313) at any height differs by a maximum of 5% from an average temperature gradient which is calculated over a corresponding temperature profile (313) over the entire height, wherein - the temperature gradient averaged over the first local temperature profile (311) and the temperature gradient averaged over the second local temperature profile (313) do not differ by more than 5%. 16)Procedure according to one of claims 7-16, characterized in that the method for thermally treating the body to be thermally treated (101, 102, 103) comprises the following temperature progression phases: - a heating phase (401) starting from a first temperature (402) to a second temperature (403), in which the body to be thermally treated (101, 102, 103) is heated with a temporal temperature ramp for heating (404), - a holding phase (405), in which the body to be thermally treated (101, 102, 103) is tempered with the approximately time-constant second temperature (403), and - a cooling phase (406) starting from the second temperature (403) to the first temperature (402), in which the body to be thermally treated (101, 102, 103) is cooled with a temporal temperature ramp for cooling (407). 17)Procedure according to claim 17, characterized in that during the heating phase (401) and/or the holding phase (405) and/or the cooling phase (406) the first partial body (101) and the second partial body (102) by means of high-temperature bonding or stack sealing. )Procedure according to claim 17 or 18, characterized in that in the body to be thermally treated (101, 102, 103) and the casing body (105), the temperature ramp for cooling (407) is run with a temporally non-linear course. )Procedure according to one of claims 17-19, characterized in that the temperature ramp for cooling (407) comprises a superposition of the following components: - a first component (506) with a continuously decreasing temperature profile starting from a first temperature (504) to a second temperature (505), and - a second component (509) with a periodic temperature change starting from a third temperature (507) to a fourth temperature (508) with an amplitude, a period, a phase, as well as an attenuation and/or an amplification. )Method according to claim 20, characterized in that within the arbitrary first cutting plane of a first constant height (305) of the temperature ramp for cooling (407) at least once generates a first spatial temperature profile (512) at any first point in time (513), and at least once generates a second spatial temperature profile (514) at any second point in time (515), wherein at any one of the first point in time (513) or at any one of the second point in time (515), the first local temperature (301) at the first infinitesimal surface element (302) is greater than the second local temperature (303) at the second infinitesimal surface element (304), wherein the first infinitesimal surface element (302) has a smaller distance from the surface (114) than the second infinitesimal surface element (304). 21) Substrate (611) produced by a method according to any one of claims 7-21. 22)Optical element (609), in particular reflective optical element (609) for reflecting EUV radiation (610), comprising: - a substrate (611) according to claim 22 made from a body (101, 102, 103) to be thermally treated, and - a reflective coating (613), in particular reflecting EUV radiation, applied to the substrate (611) on a surface (612). 23)Optical element (609) according to claim 23, further comprising at least one continuous channel (208) within the substrate (611) for actively tempering the substrate (611) by means of liquid, vaporous and/or gaseous media. 24)Optical element (609) according to claim 23 or 24, characterized in that along a spatial direction, in particular along an axis of symmetry of the element (609), further in particular along the gravitational axis of action, a constant density gradient, which extends over the extent of the element (609) along the spatial direction, in particular along the axis of symmetry of the element (509) by not more than 5%. 25)Semiconductor technology system (700), comprising at least one optical element (609), in particular a reflective optical element (609) according to one of claims 23 - 25. There follow 13 pages of drawings.

Description

Device and method for thermally treating a body to be thermally treated Description Background of the invention The invention relates to a device for thermally treating a body to be thermally treated, in particular for thermally joining a first partial body to a second partial body to form a composite body, furthermore in particular for high-temperature bonding. The invention also relates to a method for thermally treating a body to be thermally treated, in particular for thermally joining a first partial body to a second partial body to form a composite body, furthermore in particular for high-temperature bonding, at an interface formed between the first partial body and the second partial body. The invention also relates to an optical element, in particular a reflective optical element for reflecting EUV radiation, furthermore in particular an element tempered via a channel through which a medium flows, in particular an element tempered via a channel through which a medium flows, furthermore in particular an optical element tempered via a channel through which a medium flows, furthermore in particular a reflective optical element tempered via a channel through which a medium flows. Furthermore, the invention relates to a semiconductor technology system with at least one optical element, more particularly a reflective optical element, which is tempered via a channel by means of one of the tempering devices, more particularly a projection exposure system for EUV semiconductor lithography or a mask inspection system, or a wafer inspection system. In microlithography, micro- and nano-structured elements are produced, for example, as integrated circuits, whereby the structuring properties are defined by irradiating a substrate with a directed radiation source, which uses light, for example. For this purpose, projection exposure systems are used in particular, which include, among other things, a radiation source, an illumination system, a photomask (a so-called reticle), and a projection system. Such subsystems of a Projection exposure systems are each made up of separate optical units which first direct the radiation used for lithography from a radiation source via an illumination system onto a photomask and from there generate a corresponding image of the photomask on a photosensitive layer of a substrate using the projection system. The photosensitive layer can be a photoresist and the substrate can be a silicon wafer. In order to be able to produce the smallest possible structures on a substrate using microlithography in projection exposure systems, devices have been used for several years which use particularly short-wave light from the so-called extreme ultraviolet (EUV) wavelength range with wavelengths between 0.1 nm and 30 nm, in particular 13.5 nm. Due to the inherent radiation absorption of matter in this wavelength range, no transmission optics can be used for this type of radiation in a beam path of a projection exposure system consisting of several units. Therefore, in the case of EUV radiation, only reflection optics are used, for example mirrors. In order to continuously reduce the structure size of integrated circuits, projection exposure systems have recently been proposed or manufactured which use optical elements with a large numerical aperture (high-NA) or with a very large numerical aperture (hyper-NA). As the numerical aperture increases, the surface of an optical element required and used to reflect the radiation becomes correspondingly larger. Elements, in particular optical elements, further in particular reflective optical elements, for use in EUV semiconductor lithography in a projection exposure system, e.g. EUV mirrors, must withstand high thermal loads, since the EUV radiation sources in the projection exposure systems for EUV semiconductor lithography emit EUV radiation with high radiant power and part of this radiant power is absorbed by the reflective coating of the optical element. The thermal energy is transferred accordingly to all elements directly or indirectly connected to the optical element. This effect leads to heating of all elements directly or indirectly in contact with the optical element. Elements which in turn can lead to deformations of the optical elements within a projection exposure system for EUV semiconductor lithography. In the beam path of a projection exposure system for EUV semiconductor lithography, there must be no time-varying and uncontrollable change in the shape of the optical elements or other elements, since such an effect leads to corresponding wavefront changes in the EUV radiation reflected by the optical elements. In order to counteract an operational change in the temperature of the optical elements within a semiconductor lithography system, tempered optical elements are proposed for use in such areas of application. On the one hand, tempering is heating, for example to ensure a defined operating temperature before irradiating a wafer, a