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EP-4740223-A1 - ION TRAP, ION TRAP SYSTEM AND QUANTUM COMPUTING ARRANGEMENT

EP4740223A1EP 4740223 A1EP4740223 A1EP 4740223A1EP-4740223-A1

Abstract

An ion trap (1) is specified, with - at least two first electrodes (2) configured to provide a time-varying electric field, and - at least two second electrodes (4) configured to provide a static electric field, wherein - at least one of the second electrodes (4) comprises a through hole (5), and - the second electrodes (4) each comprise a soft magnetic material configured to enhance an external magnetic field. Further, an ion trap system (11) and a quantum computing arrangement (12) are specified.

Inventors

  • Sriarunothai, Theeraphot
  • Reuschel, Philipp
  • Shornikov, Andrey

Assignees

  • eleQtron GmbH

Dates

Publication Date
20260513
Application Date
20240704

Claims (10)

  1. 1. Ion trap (1) configured to perform quantum computing processes, with - at least two first electrodes (2) configured to provide a time-varying electric field, and - at least two second electrodes (4) configured to provide a static electric field, wherein - at least one of the second electrodes (4) comprises a through hole (5) , and - the second electrodes (4) each comprise a soft magnetic material configured to enhance an external magnetic field.
  2. 2. Ion trap (1) according to claim 1, wherein - each of the second electrodes (4) comprise a through hole (5) .
  3. 3. Ion trap (1) according to one of the claims 1 or 2, wherein - the time-varying electric field and the static electric field are configured to confine at least one ion along a trapping axis (6) .
  4. 4. Ion trap (1) according to one of the claims 1 to 3, wherein - the soft magnetic material is a ferromagnetic material configured to be magnetised by the external magnetic field.
  5. 5. Ion trap (1) according to claim 4, wherein - the through hole (5) has a main extension direction, and - the main extension direction is parallel to the trapping axis ( 6 ) , or - the main extension direction is inclined to the trapping axis (6) by at most 15°.
  6. 6. Ion trap (1) according to one of the claims 1 to 5, wherein - each of the second electrodes (4) has a main extension direction parallel to the trapping axis (6) .
  7. 7. Ion trap (1) according to one of the claims 1 to 5, wherein - each of the second electrodes (4) has a shape tapering towards the other second electrode (4) .
  8. 8. Ion trap (1) according to one of the claims 1 to 7, wherein - each of the second electrodes (4) comprises a first part (7) and a second part (8) , wherein - the first part (7) has the shape of a rotation body , and - the second part (8) has the shape of a tapered rotation body .
  9. 9. Ion trap system (11) , comprising - the ion trap according to one of claims 1 to 8, and - a laser device (9) , wherein - laser light of the laser device (9) is provided through the through hole (5) .
  10. 10. Quantum computing arrangement (12) , comprising - the ion trap system (11) according to claim 9, and - a permanent magnet arrangement (10) configured to establish the external magnetic field.

Description

ION TRAP, ION TRAP SYSTEM AND QUANTUM COMPUTING ARRANGEMENT The present disclosure relates to an ion trap, an ion trap system and a quantum computing arrangement . Typically, end cap electrodes of a conventional ion trap are of a bulk material and do not provide any optical access along a trapping axis . Furthermore , in order to perform quantum computing processes using trapped ions , the trapped ions have to be controllable and addressable individually from one another . An obj ect to be solved is to provide an ion trap, which has an improved optical access as well as an improved controllability . Furthermore , an ion trap system and a quantum computing arrangement comprising such an ion trap are to be provided . The obj ect is solved by the subj ect matter of the independent claims . Advantageous embodiments , implementations and further developments are the subj ect matter of the respective dependent claims . According to at least one embodiment , the ion trap comprises at least two first electrodes configured to provide a timevarying electric field . In particular, the first electrodes are spaced apart from one another . Exemplarily, each of the first electrodes extends along a main extension direction . The main extension directions of the first electrodes are parallel to one another . The first electrodes are , in particular, first blade electrodes of the ion trap . Each first blade electrode extends within a main extension plane along the corresponding main extension direction . For example , each first blade electrode has a cross sectional view along its main extension plane being rectangular or trapezoidal . In particular, each first blade electrode has an edge , wherein the edges of the first electrodes face one another and/or are arranged directly opposite to one another . Additionally, the ion trap comprises at least two further first electrodes configured to provide a static electric field . In particular, the further first electrodes are spaced apart from one another and are spaced apart from the first electrodes . Exemplarily, each of the further first electrodes extends along a main extension direction . The main extension directions of the further first electrodes and the further first electrodes are parallel to one another . The further first electrodes are , in particular, further first blade electrodes of the ion trap . Each further first blade electrode extends within a main extension plane along the corresponding main extension direction . For example , each further first blade electrode has a cross sectional view along its main extension plane being rectangular or trapezoidal . In particular, each further first blade electrode has an edge , wherein the edges of the further first electrodes face one another and/or are arranged directly opposite to one another . The main extension planes of the first electrodes and the further first electrodes , being in particular blade electrodes , cross one another in a region of the trapping axis of the ion trap . The first electrodes and/or the further first electrodes are formed of an electrically conductive material . According to at least one embodiment , the ion trap comprises at least two second electrodes configured to provide a static electric field . In particular, the second electrodes are spaced apart from one another and/or from the first electrodes and/or the further first electrodes . For example , the second electrodes are end cap electrodes of the ion trap . In particular, the ion trap is a Paul trap . According to at least one embodiment of the ion trap, at least one of the second electrodes comprises a through hole . In particular, the through hole completely penetrates the at least one second electrode . According to at least one embodiment of the ion trap, the second electrodes each comprise a soft magnetic material configured to enhance an external magnetic field . For example , the soft magnetic material has a relative permeability being at least 1 . 05 . Exemplarily, the soft magnetic material is magneti zed only once when assembling, in contrast to , for example , a typical yoke in a trans former . Such a soft magnetic material is configured to be magnetised in the external magnetic field particularly well , leading to a magnetic polarisation of the soft magnetic material . The magnetic polarisation of the soft magnetic material is achieved by the external magnetic field . The magnetic polarisation of the soft magnetic material provides a magnetic field component to the external magnetic field in a region of the soft magnetic material which is bigger than a component of the external magnetic field itsel f in the region of the soft magnetic material . Thus , the soft magnetic material enhances the external magnetic field, in particular in the region of the soft magnetic material . It is an idea, inter alia, to form a through hole within at least one of the second electrodes in order to provide an optical access to the t