EP-4740241-A1 - HEAT-SINKED POWER SEMICONDUCTOR WITH FOLDED FIN HEATSINK

Abstract

A heat-sinked power semiconductor assembly includes a semiconductor die; a plurality of pin terminals electrically coupled to the semiconductor die; an encapsulant body at least partially enclosing the semiconductor die and the plurality of pin terminals; and a heat sink, coupled to the assembly, comprising a fin set having a plurality of fin members configured to receive a cooling fluid.

Inventors

• DOWNS, JAMES P.
• VALENTE, PAUL J.
• RONNING, JEFFREY J.
• CRECELIUS, DAVID R.
• STUART, CHARLES G.

Assignees

• American Axle & Manufacturing, Inc.

Dates

Publication Date

20260513

Application Date

20240815

Claims (20)

1. 1 . A heat-sinked power semiconductor assembly, comprising: a semiconductor die; a plurality of pin terminals electrically coupled to the semiconductor die; an encapsulant body at least partially enclosing the semiconductor die and the plurality of pin terminals; and a heat sink, coupled to the assembly, comprising a fin set having a plurality of fin members configured to receive a cooling fluid.
2. 2. The heat-sinked power semiconductor assembly recited in claim 1 , further comprising a sealing pad coupled to the fin set.
3. 3. The heat-sinked power semiconductor assembly recited in claim 2, wherein the sealing pad is a compressible material creating a fluid-resistant seal between the sealing pad and the fin set.
4. 4. The heat-sinked power semiconductor assembly recited in claim 2, wherein the sealing pad is configured to abut a first side of a cavity having a surface that is non-parallel to a second side of the cavity that opposes the first side of the cavity.
5. 5. The heat-sinked power semiconductor assembly recited in claim 1 , wherein the fin set is configured to receive fluid at one end and communicate the fluid to another end of the fin set.
6. 6. The heat-sinked power semiconductor assembly recited in claim 1 , wherein the fin set includes a plurality of crests coupling the fin members.
7. 7. The heat-sinked power semiconductor assembly recited in claim 1 , the fin set comprising a folded planar sheet.
8. 8. The heat-sinked power semiconductor assembly recited in claim 1 , the fin set further comprising a plurality of perforations.
9. 9. The heat-sinked power semiconductor assembly recited in claim 1 , the fin set further comprising one or more notches at a crest of the plurality of fin members.
10. 10. The heat-sinked power semiconductor assembly recited in claim 1 , the fin set further comprising a reduced thickness section in between a face surface of one of the plurality of fin members and an opposite one of the plurality of fin members.
11. 11. A heat-sinked power semiconductor assembly, comprising: a semiconductor die; a plurality of pin terminals electrically coupled to the semiconductor die; an encapsulant body at least partially enclosing the semiconductor die and the plurality of pin terminals; a heat sink comprising a fin set having a plurality of fin members configured to receive a cooling fluid; and a heat sink base, having a pair of first walls and a pair of second walls, wherein the fin set is received within the pair of first walls and the pair of second walls.
12. 12. The heat-sinked power semiconductor assembly recited in claim 11 , wherein the pair of first walls and the pair of second walls are substantially parallel to each other.
13. 13. The heat-sinked power semiconductor assembly recited in claim 11 , wherein the fin set is configured to receive fluid at one end and communicate the fluid to another end of the fin set.
14. 14. The heat-sinked power semiconductor assembly recited in claim 11 , wherein the fin set includes a plurality of crests coupling the fin members.
15. 15. The heat-sinked power semiconductor assembly recited in claim 14, wherein at least some of the plurality of crests are fixedly attached to the heat sink base.
16. 16. The heat-sinked power semiconductor assembly recited in claim 11 , the fin set comprising a folded planar sheet.
17. 17. A heat-sinked power semiconductor assembly, comprising: a semiconductor die; a plurality of pin terminals electrically coupled to the semiconductor die; an encapsulant body at least partially enclosing the semiconductor die and the plurality of pin terminals; a heat sink, coupled to the assembly, comprising a fin set having a plurality of fin members configured to receive a cooling fluid; a sealing pad, coupled to the fin set, formed from a compressible material; and an inverter mount having a plurality of cavities shaped to receive heatsinked power semiconductors, the plurality of cavities each having a first side that is non-parallel to a second side opposite the first side, such that the first side engages a surface of the sealing pad and biases the sealing pad into engagement with the fin set.
18. 18. The heat-sinked power semiconductor assembly recited in claim 16, wherein a fluid-resistant seal exists between the sealing pad and the fin set.
19. 19. The heat-sinked power semiconductor assembly recited in claim 16, wherein the sealing pad is closed-cell foam.
20. 20. The heat-sinked power semiconductor assembly recited in claim 16, wherein the first side of the cavity is angled relative to the second side of the cavity between 10 degrees and 20 degrees.

Description

HEAT-SINKED POWER SEMICONDUCTOR WITH FOLDED FIN HEATSINK FIELD [0001] The present disclosure relates to a heat-sinked power semiconductor with a folded fin heatsink. BACKGROUND [0002] The present disclosure relates to power semiconductors used with rotating electrical machines. The power semiconductors can be used in a variety of applications, such as to invert direct current (DC) electrical power to angularly displace a rotor assembly with relative to a stator assembly of the rotating electrical machine. Inverting DC electrical power can generate significant amounts of heat, which may reduce the operating efficiency of the rotating electrical machine. It would be helpful to cool the power semiconductors. SUMMARY [0003] In one embodiment of the present disclosure, a heat-sinked power semiconductor assembly includes a semiconductor die; a plurality of pin terminals electrically coupled to the semiconductor die; an encapsulant body at least partially enclosing the semiconductor die and the plurality of pin terminals; and a heat sink, coupled to the assembly, comprising a fin set having a plurality of fin members configured to receive a cooling fluid. [0004] In one embodiment of the present disclosure, a heat-sinked power semiconductor assembly includes a semiconductor die; a plurality of pin terminals electrically coupled to the semiconductor die; an encapsulant body at least partially enclosing the semiconductor die and the plurality of pin terminals; a heat sink comprising a fin set having a plurality of fin members configured to receive a cooling fluid; and a heat sink base, having a pair of first walls and a pair of second walls, wherein the fin set is received within the pair of first walls and the pair of second walls. [0005] In one embodiment of the present disclosure, a heat-sinked power semiconductor assembly including a semiconductor die; a plurality of pin terminals electrically coupled to the semiconductor die; an encapsulant body at least partially enclosing the semiconductor die and the plurality of pin terminals; a heat sink, coupled to the assembly, comprising a fin set having a plurality of fin members configured to receive a cooling fluid; a sealing pad, coupled to the fin set, formed from a compressible material; and an inverter mount having a plurality of cavities shaped to receive heat-sinked power semiconductors, the plurality of cavities each having a first side that is non-parallel to a second side opposite the first side, such that the first side engages a surface of the sealing pad and biases the sealing pad into engagement with the fin set. DRAWINGS [0006] The drawings described herein are for illustrative purposes only of selected embodiments and not all possible implementations, and are not intended to limit the scope of the present disclosure. [0007] Figure 1 is a perspective view of a heat-sinked power semiconductor constructed in accordance with the teachings of the present disclosure; [0003] Figure 2 is a side elevation view of the heat-sinked power semiconductor of Figure 1 ; [0009] Figure 3 is a front elevation view of the heat-sinked power semiconductor of Figure 1 ; [0010] Figure 4 is a perspective view of a portion of the heat-sinked power semiconductor of Figure 1 , illustrating the construction of a power semiconductor in more detail; [0011] Figure 5 is a perspective view of a portion of the heat-sinked power semiconductor of Figure 1 , illustrating the heat sink in more detail; [0012] Figure 6 is a side elevation view of the heat sink; [0013] Figure 7 is a bottom plan views of the heat sink; [0014] Figure 8 is a perspective view of a portion of an inverter that employs a plurality of the heat-sinked power semiconductors of Figure 1 ; [0015] Figure 9 is a perspective view of a portion of an inverter that employs a plurality of the heat-sinked power semiconductors of Figure 1 ; [0016] Figure 10 is an enlarged portion of Figure 9; [0017] Figure 11 is a perspective view of an implementation of a heat-sinked power semiconductor; [0018] Figure 12 is a perspective view of an implementation of a portion of a heat-sinked power semiconductor; [0019] Figure 13 is a perspective view of an implementation of a heat-sinked power semiconductor; [0020] Figure 14 is a perspective view of an implementation of a heat-sinked power semiconductor; [0021] Figure 15 is a perspective view of an implementation of a heat-sinked power semiconductor; [0022] Figure 16 is a perspective view of an implementation of a heat-sinked power semiconductor; and [0023] Figure 17 is a cross-sectional view of an implementation of a heat- sinked power semiconductor. [0024] Corresponding reference numerals indicate corresponding parts throughout the several views of the drawings. DETAILED DESCRIPTION [0025] With reference to Figures 1 through 3, an exemplary heat-sinked power semiconductor is generally indicated by reference numeral 10. The heat- sinked power semiconductor 10 can include a power semiconductor