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EP-4740242-A1 - SEMICONDUCTOR DEVICE PACKAGE WITH IMPROVED COOLING

EP4740242A1EP 4740242 A1EP4740242 A1EP 4740242A1EP-4740242-A1

Abstract

The present disclosure relates to a semiconductor package. The semiconductor package includes a semiconductor die having a first side and a second side, the second side being opposite to the first side, a lead frame one the first side of the semiconductor die, and a heat spreader on the second side of the semiconductor die. The lead frame is embedded in a molding material. The heat spreader has a thickness greater than a thickness of the lead frame to dissipate heat associated with a power surge through the heat spreader.

Inventors

  • CHI, WILLIAM THOMAS
  • YURUKER, Sevket
  • Singh, Akshay

Assignees

  • Tesla, Inc.

Dates

Publication Date
20260513
Application Date
20240701

Claims (20)

  1. WHAT IS CLAIMED IS: 1. A packaged integrated circuit device with power surge heat dissipation, comprising: a semiconductor die having a first side and a second side, the second side being opposite to the first side; a lead frame on the first side of the semiconductor die, the lead frame being embedded in a molding material; and a heat spreader on the second side of the semiconductor die, the heat spreader having a thickness of at least 2.5 millimeters.
  2. 2. The packaged integrated circuit device of claim 1, wherein the heat spreader and the lead frame are configured to maintain the semiconductor die at a temperature of less than 200 degrees Celsius when subjected to a surge load of up to 160 Watts for 1 second from a steady state.
  3. 3. The packaged integrated circuit device of claim 1 or claim 2, wherein the thickness of the heat spreader is at least four times a thickness of the semiconductor die, wherein an area of the heat spreader is greater than an area of the semiconductor die, and wherein the heat spreader extends beyond the semiconductor die.
  4. 4. The packaged integrated circuit device of claim 3, wherein the thickness of the heat spreader is between four and twenty times the thickness of the semiconductor die. 5. The packaged integrated circuit device of claim 1, wherein the thickness of the heat spreader is at least 2.
  5. 5 times a thickness of the lead frame.
  6. 6. The packaged integrated circuit device of any of claims 1-5, wherein the packaged integrated circuit device has a recess in the molding material on a side of the packaged integrated circuit device that is opposite to the heat spreader.
  7. 7. The packaged integrated circuit device of any of claims 1-6, wherein the lead frame and the heat spreader are both joined to the semiconductor die.
  8. 8. The packaged integrated circuit device of any of claims 1-7, wherein the semiconductor die comprises a field effect transistor.
  9. 9. The packaged integrated circuit device of claim 8, wherein the field effect transistor is a gallium nitride field effect transistor.
  10. 10. The packaged integrated circuit device of any of claims 1-9, wherein the lead frame comprises a main frame and a plurality of leads extending from the main frame, and wherein each lead of the plurality of leads is flat outside of the molding material.
  11. 11. The packaged integrated circuit device of claim 10, wherein each lead of the plurality of leads comprises a wettable flank.
  12. 12. The packaged integrated circuit device of any of claims 1-11, wherein the heat spreader is a solid layer comprising copper.
  13. 13. The packaged integrated circuit device of any of claims 1-11, wherein the heat spreader is a multi-layer structure comprising a first metal layer, a second metal layer, and ceramic layer positioned between the first metal layer and the second metal layer.
  14. 14. An integrated circuit assembly with power surge heat dissipation, comprising: a printed circuit board; a packaged integrated circuit device on the printed circuit board, the packaged integrated circuit device comprising a semiconductor die, a lead frame positioned between the semiconductor die and the printed circuit board, and a heat spreader positioned on an opposite side of the semiconductor die than the lead frame, the heat spreader having a thickness of at least 2.5 millimeters; and a cooling structure in thermal contact with the heat spreader.
  15. 15. The integrated circuit assembly of claim 14, wherein the packaged integrated circuit device comprises molding material or other separator to provide electrical and/or thermal insulation between the printed circuit board and the lead frame.
  16. 16. The integrated circuit assembly of claim 15, wherein the packaged integrated circuit device has a recess in the molding material on a side facing the printed circuit board.
  17. 17. The integrated circuit assembly of claim 14, further comprising a second packaged integrated circuit device on the printed circuit board, the second packaged integrated circuit device comprising a second heat spreader in thermal contact with the cooling structure.
  18. 18. The integrated circuit assembly of any of claims 14-17, wherein the cooling structure comprises a heatsink and/or a cold plate.
  19. 19. A packaged integrated circuit device with power surge heat dissipation, comprising: a semiconductor die having a first side and a second side, the second side being opposite to the first side, the semiconductor die comprising a field effect transistor; a lead frame on the first side of the semiconductor die, the lead frame being embedded in a molding material; and a cooling structure on the second side of the semiconductor die, the cooling structure comprising two metal layers and a ceramic layer positioned between the two metal layers, wherein a thickness of the cooling structure is greater than 2.5 millimeters.
  20. 20. The packaged integrated circuit device of claim 19, wherein the thickness of the cooling structure is at least 2.5 times a thickness of the lead frame.

Description

TSLA.773WO PATENT SEMICONDUCTOR DEVICE PACKAGE WITH IMPROVED COOLING [0001] This application claims the benefit of U.S. Provisional Patent Application No. 63/511,826, entitled “SEMICONDUCTOR DEVICE PACKAGE WITH IMPROVED COOLING,” filed on July 3, 2023, the disclosure of which is hereby incorporated by reference in its entirety and for all purposes. BACKGROUND Technical Field [0002] This application relates to semiconductor device packages. In particular, some embodiments relate to a semiconductor package with a cooling structure on one side of a semiconductor die and a molding material filled within the semiconductor package. Description of Related Technology [0003] Semiconductor devices are used in a wide variety of applications. In some applications, semiconductor devices can experience high electrical loads that can result in significant heating of the semiconductor device. There may be technical problems associated with high electrical loads, such as detrimental heating of the semiconductor device from the high load. In addition, such significant heating generated from the semiconductor die can cause thermal stress on a carrier, such as a printed circuit board, which integrates the semiconductor device. SUMMARY [0004] The innovations described in the claims each have several aspects, no single one of which is solely responsible for its desirable attributes. Without limiting the scope of the claims, some prominent features of this disclosure will now be briefly described. [0005] One aspect of the present disclosure is a packaged integrated circuit device with power surge heat dissipation. The packaged integrated circuit device includes a semiconductor die having a first side and a second side that the second side is being opposite to the first side, a lead frame on the first side of the semiconductor die that the lead frame is embedded in a molding material, and a heat spreader on the second side of the semiconductor die that the heat spreader has a thickness of at least 2.5 millimeters. [0006] In one embodiment, the heat spreader and the lead frame can be configured to maintain the semiconductor die at a temperature of less than 200 degrees Celsius when subjected to a surge load of up to 160 Watts for 1 second from a steady state. [0007] In one embodiment, the thickness of the heat spreader can be at least four times a thickness of the semiconductor die. An area of the heat spreader can be greater than an area of the semiconductor die, and the heat spreader can be extended beyond the semiconductor die. In addition, the thickness of the heat spreader can be between four and twenty times the thickness of the semiconductor die. [0008] In one embodiment, the thickness of the heat spreader can be at least 2.5 times a thickness of the lead frame. [0009] In one embodiment, the packaged integrated circuit device can have a recess in the molding material on a side of the packaged integrated circuit device that is opposite to the heat spreader. [0010] In one embodiment, the lead frame and the heat spreader can both be joined to the semiconductor die. [0011] In one embodiment, the semiconductor die can include a field effect transistor. In addition, the field effect transistor can be a gallium nitride field effect transistor. [0012] In one embodiment, the lead frame can include a main frame, and a plurality of leads can be extended from the main frame. In addition, each lead of the plurality of leads can be flat outside of the molding material. In addition, each lead of the plurality of leads can include a wettable flank. [0013] In one embodiment, the heat spreader can be a solid layer that can include a copper. [0014] In one embodiment, the heat spreader can be a multi-layer structure that can include a first metal layer, a second metal layer, and a ceramic layer positioned between the first metal layer and the second metal layer. [0015] Another aspect of the present disclosure is an integrated circuit assembly with power surge heat dissipation. The integrated circuit assembly includes a printed circuit board, a packaged integrated circuit device on the printed circuit board that includes a semiconductor die, a lead frame positioned between the semiconductor die and the printed circuit board, and a heat spreader positioned on an opposite side of the semiconductor die than the lead frame, and a cooling structure in thermal contact with the heat spreader. The heat spreader has a thickness of at least 2.5 millimeters. [0016] In one embodiment, the packaged integrated circuit device can include molding material or other separator to provide electrical and/or thermal insulation between the printed circuit board and the lead frame. In addition, the packaged integrated circuit device can have a recess in the molding material on a side facing the printed circuit board. [0017] In one embodiment, the packaged integrated circuit device can further include a second packaged integrated circuit device on the printed circui