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EP-4740245-A1 - POWER MODULE

EP4740245A1EP 4740245 A1EP4740245 A1EP 4740245A1EP-4740245-A1

Abstract

The invention relates to a power module (1), comprising: • a substrate (3) • a first conductor (C+) comprising a connection portion (P+), at least one terminal (B+), and at least one coupling portion (PL+); • a second conductor (C-) comprising a connection portion (P-) and a terminal (B-); • a third conductor (C~) comprising a first connection portion (P1~) and a second connection portion (P2~), at least one terminal (B~), and at least one coupling portion (PL~); characterised in that at least one coupling portion (PL+) of the first conductor (C+) spans across a connection portion (P~) of the third conductor (C~), or in that at least one coupling portion (PL~) of the third conductor (C~) spans across a connection portion (P+) of the first conductor (C+).

Inventors

  • MASSOL, Laurent
  • KOPP, Gabriel
  • DRIDI, Raouaa
  • HOUARD, Jean Luc
  • LEJUIF, Arnaud
  • VERGER, BENOIT
  • MORELLE, JEAN MICHEL

Assignees

  • Valeo eAutomotive Germany GmbH

Dates

Publication Date
20260513
Application Date
20240703

Claims (16)

  1. [Claim 1] Power module (1) comprising: • A substrate (3) • a first conductor (C+) comprising a connection portion (P+), at least one terminal (B+), and at least one connection portion (PL+); • a second conductor (C-) comprising a connection portion (P-) and a terminal (B-); • a third conductor (C~) comprising first (P1~) and second connection portions (P2~), at least one terminal (B~), and at least one connection portion (PL~); Characterized in that at least one connection portion (PL+) of the first conductor (C+) spans a connection portion (P~) of the third conductor (C~), or that at least one connection portion (PL~) of the third conductor (C~) spans a connection portion (P+) of the first conductor (C+).
  2. [Claim 2] Power module (1) according to claim 1, wherein the connection portions (P+, P-, P1~, P2~) of the conductors (C+, C-, C~) of the power module follow one another in a first direction (D1) in the order: the connection portion (P-) of the second conductor (C-), the first connection portion (P1~) of the third conductor (C~), the connection portion (P+) of the first conductor (C+) and the second connection portion (P2~) of the third conductor (C~);
  3. [Claim 3] Power module (1) according to one of the preceding claims, comprising: • a first switch formed of first aligned transistors (LS), the first transistors being pressed against the first connection portion (P1~) of the third conductor (C~) and electrically connected to the connection portion (P-) of the second conductor (C-); • a second switch formed of second aligned transistors (THS), the second transistors being pressed against the connection portion (P+) of the first conductor (C+) and electrically connected to the second connection portion (P2~) of the third conductor (C~); • and between the first transistors (TLS) and the second transistors (THS), a transistor control circuit (2).
  4. [Claim 4] Power module (1) according to claim 3, in which the transistors (TLS, THS) of a switch are spaced apart by a distance (Dt) greater than 2 mm.
  5. [Claim 5] Power module according to one of the preceding claims, in which the flat connection portions (P+, P-, P1~, P2~) of the conductors (C+, C-, C~) extend parallel to each other, and parallel to the plane of the substrate (3).
  6. [Claim 6] Power module (1) according to one of the preceding claims, in which the connecting portions (PL+, PL~) of the conductors (C+, C-, C~) comprise a conductive bar (4) comprising a flat face parallel to the plane of the substrate (3).
  7. [Claim 7] Power module (1) according to claim 6, in which the flat faces of the conductive bars (4) of the first conductor are coplanar and define a connection plane of the first conductor (C+).
  8. [Claim 8] Power module (1) according to one of claims 6 to 7, in which the flat faces of the conductive bars (4) of the third conductor (C~) are coplanar and define a connection plane of the third conductor.
  9. [Claim 9] Power module (1) according to claims 6 to 8, wherein the connection planes of the first conductor (C+) and the third conductor (C~) are placed higher than the flat faces of the flat connection portions (P+, P-, P1~, P2~) of the conductors (C+, C-, C~).
  10. [Claim 10] Power module (1) according to one of the preceding claims, in which the connection portions (PL+, PL~) of the first conductor (C+) and of the third conductor (C~) each comprise at least one conductive pad (6), electrically connected to a conductive bar (4) of the connection portion (PL+, PL~) of the conductor on the one hand, and to a connection portion (P+, P~) of the conductor on the other hand and in which the second conductor (C-) comprises at least one conductive pad (6) arranged between the terminal (B-) of the second conductor and the connection portion (P-) and in which the third conductor (C~) comprises at least one conductive pad (6) arranged between the second connection portion (P2~) and the terminal (B~) of the third conductor.
  11. [Claim 11] Power module (1) according to claim 10, in which the conductive pads (6) are welded, in particular by laser welding, on the conductive bars (4) of the connecting portions (PL+, PL~) of the conductors (C+, C~).
  12. [Claim 12] Power module (1) according to one of claims 10 to 11, in which the conductive pads (6) are welded, brazed or sintered on the connection portions (P+, P1~, P2~) of the conductors (C+, C~).
  13. [Claim 13] Power module (1) according to one of claims 10 to 12, in which at least one of the conductive bars (4) of the first conductor (C+) and of the third conductor (C~) has a (9), that is to say a portion of lesser thickness.
  14. [Claim 14] Power module (1) according to one of claims 10 to 13, in which at least one conductive bar (4) of the connecting portions (PL+, PL~) of the conductors (C+, C~) comprises at least one welding zone (7), and at least one holding zone (8) arranged to allow the conductive bar to be locked in position. (4) when assembling the conductive bar on the conductive pad (6) of the connecting portion, in particular when welding the conductive bar on the conductive pad.
  15. [Claim 15] Power module (1) according to one of claims 10 to 14, in which at least one conductive bar (4) comprises two peripheral holding zones (8) arranged on either side of the central welding zone (7).
  16. [Claim 16] Power module (1) according to one of claims 10 to 14, in which at least one conductive bar (4) comprises two peripheral welding zones (7) arranged to be welded to two adjacent conductive pads (6), and located on either side of a central holding zone (8).

Description

DESCRIPTION Title: Power module Technical field of the invention [1] The present invention relates to a power module. Technological background [2] It is known to use a power module implementing a switching arm with a high-side switch formed of several transistors, called high-side, and a low-side switch also formed of several transistors, called low-side. Generally, the transistors on each side are distributed on two parallel rows deposited on a substrate. The power module further comprises a control circuit with two parts, spaced apart from each other, for controlling respectively the high-side transistors and the low-side transistors. Each of the two parts comprises pins projecting upwards or downwards to be connected to drivers. [3] On these power modules, the connection between the rows of transistors and the terminals of the power module is made using conductive tracks on the substrate. [4] However, using bonding tracks on the substrate has several drawbacks. [5] Since the space on the substrate is limited, there are strong constraints on the size and path of the conductive traces. Some traces have a long path and a small cross-section, therefore a high impedance. This is particularly problematic when all the traces have very different impedances, which can harm the performance of the power module. [6] In addition, the space occupied by the connection tracks requires the transistors to be brought closer together on the substrate. Typically, a maximum distance of 1 mm to 1.6 mm is obtained between two transistors. This small distance induces thermal coupling between the different components, and increases the thermal impedance of the entire power module. [7] Then, the use of connection tracks placed on the same plane as the transistors requires separating a switch formed by several transistors into two groups of transistors in order to allow the passage of connection tracks. This Separation into groups of transistors implies an imbalance in the current passing through these groups of transistors, which harms the efficiency of the power module. [8] It may therefore be desirable to provide a power module which makes it possible to overcome at least some of the aforementioned problems and constraints. [9] The invention relates to a power module comprising: • a substrate • a first conductor comprising a connection portion, at least one terminal, and at least one link portion; • a second conductor comprising a connection portion and a terminal; • a third conductor comprising first and second connection portions, at least one terminal, and at least one connecting portion; • a flat substrate on which the various conductors are placed. Characterized in that at least one connecting portion of the first conductor spans a connecting portion of the third conductor, or at least one connecting portion of the third conductor spans a connecting portion of the first conductor. [10] According to one aspect of the invention, the power module is for example an inverter, or an on-board charger (OBC). [11] According to one aspect of the invention, the portions of the conductors of the power module follow one another in a first direction in the order: the connection portion of the second conductor, the first connection portion of the third conductor, the connection portion of the first conductor and the second connection portion of the third conductor; [12] According to one aspect of the invention, the power module comprises: • a first switch formed from aligned first transistors, the first transistors being pressed against the first connection portion of the third conductor and electrically connected to the connection portion of the second conductor; • a second switch formed of aligned second transistors, the second transistors being pressed against the connection portion of the first conductor and electrically connected to the second connection portion of the third conductor; and • between the first transistors and the second transistors, a transistor control circuit. [13] According to one aspect of the invention, the transistors of a switch are spaced apart by a distance Dt greater than 2 mm, in particular greater than 3 mm, in particular equal to 4 mm. [14] According to one aspect of the invention, this substrate is flat, and defines a reference plane. A Z axis is also defined, normal to the plane of the substrate, and directed from the substrate towards the conductors. This Z axis makes it possible to define a height: a plane A will be higher than a plane B if it is further away from the substrate along this vertical Z axis. The distance from a plane to the reference plane is called height. [15] Furthermore, an element C will be said to be “above” an element D if this element C is placed higher than the element D and the projections of the elements C and D on the reference plane overlap. [16] When referring to a connecting portion of a conductor spanning the connecting portion of another conductor, it is meant that at