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EP-4741529-A1 - SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROGRAM AND SUBSTRATE PROCESSING APPARATUS

EP4741529A1EP 4741529 A1EP4741529 A1EP 4741529A1EP-4741529-A1

Abstract

It is possible to improve a film forming rate. There is provided a technique that includes: (a) supplying a first gas containing a primary element constituting a film and a halogen element to a substrate; (b) supplying a first reducing gas containing hydrogen to the substrate; (c) supplying a second reducing gas containing hydrogen to the substrate, wherein a material of the second reducing gas is different from that of the first reducing gas; (d) performing (a) and (b) in parallel, wherein a supply amount of the first reducing gas is decreased compared to that of when a supply of the first reducing gas is started while performing (a) and (b) in parallel; and (e) performing (d) and (c) a predetermined number of times to form the film on the substrate.

Inventors

  • MATSUNO, YUTAKA

Assignees

  • Kokusai Electric Corp.

Dates

Publication Date
20260513
Application Date
20250929

Claims (15)

  1. A substrate processing method comprising: (a) supplying a first gas containing a primary element constituting a film and a halogen element to a substrate; (b) supplying a first reducing gas containing hydrogen to the substrate; (c) supplying a second reducing gas containing hydrogen to the substrate, wherein a material of the second reducing gas is different from that of the first reducing gas; (d) performing (a) and (b) in parallel, wherein a supply amount of the first reducing gas is decreased compared to that of when a supply of the first reducing gas is started while performing (a) and (b) in parallel; and (e) performing (d) and (c) a predetermined number of times to form the film on the substrate.
  2. The substrate processing method of claim 1, wherein the supply amount of the first reducing gas is decreased in (d) in a step-wise manner, or wherein the supply amount of the first reducing gas is decreased continuously in (d).
  3. The substrate processing method of claim 1 and/or 2, wherein a reduction rate in the supply amount of the first reducing gas in (d) is adjusted based on a temperature of when performing (e).
  4. The substrate processing method of claim 3, wherein the reduction rate is increased to be greater than a predetermined value when the temperature is higher than a predetermined temperature, or wherein the reduction rate is decreased to be less than the predetermined value when the temperature is lower than the predetermined temperature.
  5. The substrate processing method of any one or more of claims 1 to 4, further comprising (f) continuously supplying the first reducing gas after (d).
  6. The substrate processing method of claim 5, wherein the supply amount of the first reducing gas is maintained constant in (f), or wherein the supply amount of the first reducing gas in (f) is decreased subsequent to (d).
  7. The substrate processing method of any one or more of claims 1 to 6, wherein, in (d), the supply amount of the first reducing gas is decreased relative to a supply amount of the first gas.
  8. The substrate processing method of claim 7, wherein, in (d), the supply amount of the first reducing gas is decreased relative to the supply amount of the first gas by increasing the supply amount of the first gas.
  9. The substrate processing method of claim 8, wherein, in (d), the supply amount of the first gas is increased after the supply of the first reducing gas is started.
  10. The substrate processing method of any one or more of claims 1 to 9, wherein a supply amount of the first gas is increased in (d).
  11. The substrate processing method of any one or more of claims 8 to 10, wherein the supply amount of the first gas is increased in (d) in a step-wise manner, or wherein, in (d), the supply amount of the first gas is increased continuously.
  12. The substrate processing method of any one or more of claims 1 to 11, further comprising (g) performing (a) and (b) in parallel after (d) separately from (d), wherein, while (a) and (b) are performed in parallel in (g), a supply amount of the first reducing gas in (g) is decreased compared to the supply amount of the first reducing gas in (d).
  13. A method of manufacturing a semiconductor device, comprising the method of any one or more of claims 1 to 12.
  14. A program that causes a substrate processing apparatus, by a computer, to perform: (a) supplying a first gas containing a primary element constituting a film and a halogen element to a substrate; (b) supplying a first reducing gas containing hydrogen to the substrate; (c) supplying a second reducing gas containing hydrogen to the substrate, wherein a material of the second reducing gas is different from that of the first reducing gas; (d) performing (a) and (b) in parallel, wherein a supply amount of the first reducing gas is decreased compared to that of when a supply of the first reducing gas is started while performing (a) and (b) in parallel; and (e) performing (d) and (c) a predetermined number of times to form the film on the substrate.
  15. A substrate processing apparatus comprising: a first gas supplier configured to supply a first gas containing a primary element constituting a film and a halogen element to a substrate; a second gas supplier configured to supply a first reducing gas containing hydrogen to the substrate; a third gas supplier configured to supply a second reducing gas containing hydrogen to the substrate, wherein a material of the second reducing gas is different from that of the first reducing gas; and a controller configured to be capable of controlling the first gas supplier, the second gas supplier and the third gas supplier to perform: (a) supplying the first gas to the substrate; (b) supplying the first reducing gas to the substrate; (c) supplying the second reducing gas to the substrate; (d) performing (a) and (b) in parallel, wherein a supply amount of the first reducing gas is decreased compared to that of when a supply of the first reducing gas is started while performing (a) and (b) in parallel; and (e) performing (d) and (c) a predetermined number of times to form the film on the substrate.

Description

[Technical Field] The present disclosure relates to a substrate processing method, a method of manufacturing a semiconductor device, a program and a substrate processing apparatus [Related Art] As a part of a manufacturing process of a semiconductor device, a step of forming a film on a surface of a substrate may be performed (for example, see Patent Document 1). [Related Art Document] [Patent Document] Patent Document 1: Japanese Patent Laid-Open No. 2011-006783 [Disclosure] [Technical Problem] In a step of forming a film, a film forming speed (film forming rate) may decrease. According to the present disclosure, there is provided a technique capable of improving the film forming rate. [Technical Solution] According to an embodiment of the present disclosure, there is provided a technique that includes: (a) supplying a first gas containing a primary element constituting a film and a halogen element to a substrate; (b) supplying a first reducing gas containing hydrogen to the substrate; (c) supplying a second reducing gas containing hydrogen to the substrate, wherein a material of the second reducing gas is different from that of the first reducing gas; (d) performing (a) and (b) in parallel, wherein a supply amount of the first reducing gas is decreased compared to that of when a supply of the first reducing gas is started while performing (a) and (b) in parallel; and (e) performing (d) and (c) a predetermined number of times to form the film on the substrate. [Advantageous Effects] According to some embodiments of the present disclosure, it is possible to improve a film forming rate. [Brief Description of Drawings] FIG. 1 is a diagram schematically illustrating a vertical cross-section of a substrate processing apparatus according to one or more embodiments of the present disclosure.FIG. 2 is a diagram schematically illustrating a horizontal cross-section taken along a line A - A of the substrate processing apparatus shown in FIG. 1.FIG. 3 is a block diagram schematically illustrating a configuration of a controller and its related components of the substrate processing apparatus.FIG. 4 is a flow chart schematically illustrating a series of steps including a substrate processing step.FIG. 5 is a diagram schematically illustrating gas supply timings in the substrate processing step.FIG. 6 is a diagram schematically illustrating patterns of supplying a first gas and a second gas.FIG. 7 is a diagram schematically illustrating patterns of supplying the first gas and the second gas.FIG. 8 is a diagram schematically illustrating patterns of supplying the first gas and the second gas.FIG. 9 is a diagram schematically illustrating patterns of supplying the first gas and the second gas.FIG. 10 is a diagram schematically illustrating an example of table data indicating a relationship between a process temperature and a reduction rate of the second gas. [Detailed Description] <Embodiments> Hereinafter, one or more embodiments (hereinafter, also simply referred to as "embodiments") according to the present disclosure will be described with reference to FIGS. 1 to 10. For example, the drawings used in the following descriptions are all schematic, and a relationship between dimensions of each component and a ratio of each component shown in the drawing may not always match the actual ones. In addition, even between the drawings, the relationship between the dimensions of each component and the ratio of each component may not always match. (1) Configuration of Substrate Processing Apparatus A substrate processing apparatus 10 according to the present embodiments includes a process furnace 202 provided with a heater 207 serving as a heating structure (which is a heating apparatus or a heating system). The heater 207 is of a cylindrical shape, and is vertically installed while being supported by a heater base (not shown) serving as a support plate. An outer tube 203 constituting a process vessel is provided in an inner side of the heater 207 to be aligned in a manner concentric with the heater 207. For example, the outer tube 203 is made of a heat resistant material such as quartz and silicon carbide (SiC). For example, the outer tube 203 is of a cylindrical shape with a closed upper end and an open lower end. A manifold 209 (hereinafter, also referred to as an "MF 209") is provided under the outer tube 203 to be aligned in a manner concentric with the outer tube 203. For example, the MF 209 is made of a metal such as stainless steel. For example, the MF 209 is of a cylindrical shape with open upper and lower ends. An O-ring 220a serving as a seal is provided between an upper end portion of the MF 209 and the outer tube 203. As the MF 209 is supported by the heater base, the outer tube 203 is installed vertically. An inner tube 204 constituting the process vessel is provided in an inner side of the outer tube 203. For example, the inner tube 204 is made of a heat resistant material such as quartz and silicon carbide (SiC)