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EP-4741538-A1 - SURFACE-TREATED ALUMINUM MATERIAL, METHOD FOR PRODUCING SAME, AND MEMBER FOR SEMICONDUCTOR PRODUCTION DEVICE

EP4741538A1EP 4741538 A1EP4741538 A1EP 4741538A1EP-4741538-A1

Abstract

A surface-treated aluminum material (1) comprises: a base material (2), which is composed of aluminum or an aluminum alloy in which the Cu content is 0 mass% or more and 1.8 mass% or less; and a protective film (3), which is formed on the base material. The protective film (3) comprises: an oxide layer (31), which is composed of an oxide or oxides of aluminum and covers the base material (2); and a hydrated oxide layer (32), which contains a hydrated oxide or hydrated oxides of aluminum and covers the oxide layer (31). In the situation in which cathodic polarization measurements are performed, using a prescribed measurement solution, on the base material (2) and on the surface-treated aluminum material (1) after it had been heated for 4 hours at a temperature of 200°C, the ratio J1/J2 of the current density J1 of the surface-treated aluminum material (1) to the current density J2 of the base material (2) is 150 × 10 -5 or less.

Inventors

  • NAKAJIMA, DAIKI
  • MURATA, TAKUYA

Assignees

  • UACJ Corporation

Dates

Publication Date
20260513
Application Date
20240606

Claims (9)

  1. A surface-treated aluminum material having a base material, which is composed of aluminum or an aluminum alloy in which the Cu content is 0 mass% or more and 1.8 mass% or less, and a protective film, which is formed on the base material, wherein: the protective film comprises: an oxide layer, which is composed of an oxide or oxides of aluminum and covers the base material; and a hydrated oxide layer, which contains a hydrated oxide or hydrated oxides of aluminum and covers the oxide layer; and in the situation in which cathodic polarization measurements are performed-using a measurement solution obtained by mixing a solution of NaCl having a concentration of 5 mass% and acetic acid having a concentration of 99.7% such that the volumetric ratio of the NaCl solution to the acetic acid = 1000:1-on the base material and the surface-treated aluminum material after it had been heated at a temperature of 200°C for 4 hours, and the current density at the electric potential at the center of an electric-potential region of the base material that exhibits the diffusion-limited current of hydrogen ions was measured, the ratio J1/J2 of the current density J1 of the surface-treated aluminum material to the current density J2 of the base material is 150 × 10 -5 or less.
  2. A surface-treated aluminum material having a base material, which is composed of aluminum or an aluminum alloy in which the Cu content is 0 mass% or more and 1.8 mass% or less, and a protective film, which is formed on the base material, wherein: the protective film comprises: an oxide layer, which is composed of an oxide or oxides of aluminum and covers the base material; and a hydrated oxide layer, which contains a hydrated oxide or hydrated oxides of aluminum and covers the oxide layer; and a sample having the protective film on one surface of the base material was prepared from the surface-treated aluminum material and measured in a state in which a strain gauge is mounted on the sample on a rear surface of the protective film, the difference ε1 - ε2 between the amount ε1 of strain of the sample at a temperature of 200°C and the amount ε2 of strain of the base material at a temperature of 200°C is 100 × 10 -6 or less.
  3. The surface-treated aluminum material according to claim 1 or 2, wherein the mass loss per unit of area is 0.3 g/dm 2 or less in the situation in which a sealing test has been performed using a method stipulated in JIS H8683-2:2013.
  4. A material for a semiconductor-manufacturing apparatus composed of the surface-treated aluminum material according to any one of claims 1-3.
  5. A method of manufacturing the surface-treated aluminum material according to any one of claims 1-3, comprising: forming the oxide layer, which has pores, on the base material by performing an anodizing treatment on the base material; thereafter, heating the base material and the oxide layer at a temperature of 50°C or higher and 350°C or lower; and thereafter, contacting the oxide layer with a sealing agent, and forming the hydrated oxide layer on the oxide layer while sealing the pores.
  6. The method of manufacturing the surface-treated aluminum material according to claim 5, wherein, during the heating, the heating time from the start of heating the oxide layer to the end of heating is 1 min or more and less than 12 hours.
  7. The method of manufacturing the surface-treated aluminum material according to claim 5 or 6, wherein the sealing agent is hot water.
  8. The method of manufacturing the surface-treated aluminum material according to any one of claims 5-7, wherein, during the sealing, the oxide layer is contacted with hot water as the sealing agent that is 95°C or higher for 10 min or more and less than 120 min.
  9. The method of manufacturing the surface-treated aluminum material according to any one of claims 5-8, wherein the electrolyte solution employed in the anodizing treatment contains an inorganic electrolyte composed of an inorganic cation and one or two or more anions selected from the group consisting of a sulfate ion, a phosphate ion, an ammonium ion, and a borate ion.

Description

[TECHNICAL FIELD] The present invention relates to a surface-treated aluminum material, a method of manufacturing the same, and a material for a semiconductor-manufacturing apparatus. [BACKGROUND ART] Aluminum materials composed of aluminum or an aluminum alloy are utilized in various applications. An anodic oxide film can be provided on the surface(s) of these aluminum materials for purposes such as surface protection. For example, a component for a substrate-processing apparatus that performs plasma treatment on a substrate is disclosed in Patent Document 1, characterized by having a film that has been formed on a surface of the component by an anodizing treatment, in which the component is connected to an anode of a DC power supply and is immersed in a solution that contains an organic acid as a main component, wherein a semi-sealing process using boiling water is performed on the film. [PRIOR ART LITERATURE] [Patent Documents] [Patent Document 1] Japanese Laid-open Patent Publication 2008-81815 [SUMMARY OF THE INVENTION] [PROBLEMS TO BE SOLVED BY THE INVENTION] However, the component of Patent Document 1 has the problem that, because pores in the anodic oxide film are not completely closed up, durability with respect to corrosive gases and plasma is low. Meanwhile, a method that completely closes up the pores in the anodic oxide film on the component of Patent Document 1 is conceivable in order to increase durability with respect to corrosive gases and plasma. However, in this situation, cracks are more likely to form in the anodic oxide film when the temperature rises, and there is a risk that debris composed of small pieces of the anodic oxide film might be formed. To curtail the formation of such debris, there is demand to further increase the heat resistance of aluminum materials comprising anodic oxide films on their surfaces. The present invention was conceived in view of this background, and it is an object is to provide: a surface-treated aluminum material that excels in corrosion resistance with respect to corrosive gases and plasma and is capable of curtailing the formation of cracks even when the temperature rises; a method of manufacturing the same; and a material for a semiconductor-manufacturing apparatus. [MEANS FOR SOLVING THE PROBLEMS] One aspect of the present invention is a surface-treated aluminum material having a base material, which is composed of aluminum or an aluminum alloy in which the Cu (copper) content is 0 mass% or more and 1.8 mass% or less, and a protective film, which is formed on the base material, wherein: the protective film comprises: an oxide layer, which is composed of an oxide or oxides of aluminum and covers the base material; anda hydrated oxide layer, which contains a hydrated oxide or hydrated oxides of aluminum and covers the oxide layer; andin the situation in which cathodic polarization measurements are performed-using a measurement solution obtained by mixing a solution of NaCl having a concentration of 5 mass% and acetic acid having a concentration of 99.7% such that the volumetric ratio of the NaCl solution to the acetic acid = 1000:1-on the base material and on the surface-treated aluminum material after it had been heated at a temperature of 200°C for 4 hours, and the current density at the electric potential at the center of an electric-potential region of the base material that exhibits the diffusion-limited current of hydrogen ions was measured, the ratio J1/J2 of the current density J1 of the surface-treated aluminum material to the current density J2 of the base material is 150 × 10-5 or less. A second aspect of the present invention is a surface-treated aluminum material having a base material, which is composed of aluminum or an aluminum alloy in which the Cu content is 0 mass% or more and 1.8 mass% or less, and a protective film, which is formed on the base material, wherein: the protective film comprises: an oxide layer, which is composed of an oxide or oxides of aluminum and covers the base material; anda hydrated oxide layer, which contains a hydrated oxide or hydrated oxides of aluminum and covers the oxide layer; anda sample having the protective film on one surface of the base material was prepared from the surface-treated aluminum material and measured in a state in which a strain gauge is mounted on the sample on a rear surface of the surface having the protective film, the difference ε1 - ε2 between the amount ε1 of strain of the sample at a temperature of 200°C and the amount ε2 of strain of the base material at a temperature of 200°C is 100 × 10-6 or less. A third aspect of the present invention is a material for a semiconductor-manufacturing apparatus composed of the surface-treated aluminum material according to the above-mentioned aspects. A fourth aspect of the present invention is a method of manufacturing the surface-treated aluminum material according to the aforementioned aspects, comprising: forming the oxide layer, which h