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EP-4742862-A1 - PEROVSKITE SOLAR CELL

EP4742862A1EP 4742862 A1EP4742862 A1EP 4742862A1EP-4742862-A1

Abstract

An embodiment of the disclosure provides a perovskite solar cell comprising: a lower electrode; a hole transport layer formed on the lower electrode; a perovskite layer formed on the hole transport layer; a passivation layer formed on the perovskite layer; an electron transport layer formed on the passivation layer; and an upper electrode formed on the electron transport layer, wherein the passivation layer includes a halide organic material.

Inventors

  • KIM, JUN YOUNG
  • HAN, SUNG HOON
  • CHOI, IN TAEK
  • KIM, MYOUNG
  • YUN, DA EUN

Assignees

  • Hanwha Solutions Corporation

Dates

Publication Date
20260513
Application Date
20240726

Claims (15)

  1. A perovskite solar cell comprising: a lower electrode; a hole transport layer formed on the lower electrode; a perovskite layer formed on the hole transport layer; a passivation layer formed on the perovskite layer; an electron transport layer formed on the passivation layer; and an upper electrode formed on the electron transport layer, wherein the passivation layer includes a compound represented by Formula 1: wherein, in Formula 1, R 1 is hydrogen or C 1-10 alkyl; R 2 is F, Cl, Br, or I; and L is hydrogen or C 1-10 alkylene.
  2. The perovskite solar cell of claim 1, wherein R 1 is hydrogen or C 1-5 alkyl; R 2 is Br; and L is hydrogen or C 1-5 alkylene.
  3. The perovskite solar cell of claim 1, wherein a concentration of the compound of Formula 1 in the passivation layer is 0.1 to 1 mM.
  4. The perovskite solar cell of claim 1, wherein the lower electrode and the upper electrode are each a trans parent electrode or a metal electrode.
  5. The perovskite solar cell of claim 4, wherein the transparent electrode includes ITO, IZO, AZO, or FTO, and the metal electrode includes Ag, Au, Al, Cu, SnPb, SnAgBi, or SnAgCu.
  6. The perovskite solar cell of claim 1, wherein the hole transport layer includes a material selected from the group consisting of Spiro-OMeTAD, PEDOT:PSS, G-PEDOT, PANI:PSS, PANI:CSA, PDBT, P3HT, PCPDTBT, PCDTBT, PTAA, 2PACz, Me-4PACz, MoO 3 , V 2 O 5 , NiO, WO 3 , CuI, CuSCN, and combinations thereof.
  7. The perovskite solar cell of claim 1, wherein the perovskite layer includes a perovskite material of Formula 2: [Formula 2] ABX 3 wherein, in Formula 2, A is an alkali metal or a substituted or unsubstituted C 1-25 alkyl group; when A is substituted, a substituent thereof is an amino group, a hydroxyl group, a cyano group, a halogen group, a nitro group or a methoxy group; B includes a cation of metal selected from the group consisting of Pb, Sn, Ge, Cu, Ni, Co, Fe, Mn, Cr, Pd, Cd, Yb, and combinations thereof; and X includes a halide anion or a chalcogenide anion.
  8. The perovskite solar cell of claim 1, wherein the electron transport layer includes a material selected from the group consisting of BaSnO 3 , TiO 2 , ZrO, Al 2 O 3 , SnO 2 , ZnO, WO 3 , NbOH, Nb 2 O 5 , TiSrO 3 , and combinations thereof.
  9. The perovskite solar cell of claim 1, further comprising: a lower solar cell below the lower electrode.
  10. The perovskite solar cell of claim 9, wherein the lower solar cell is a polycrystalline silicon solar cell, a crystalline silicon solar cell, a perovskite solar cell, a GaAs solar cell, a CdTe solar cell, a CIGS solar cell, a CZTS solar cell, an organic solar cell, a dye-sensitized solar cell, or a group III-V compound solar cell.
  11. The perovskite solar cell of claim 1 or 9, further comprising: a buffer layer between the hole transport layer and the perovskite layer and/or between at least one of the electron transport layer and the passivation layer.
  12. The perovskite solar cell of claim 11, wherein the buffer layer includes at least one of LiF, PEAI, PEABr, 4F-PEAI, octylammonium iodide, oleylamine, 2PACz, 4PACz, Me-4PACz, and MeO-2PACz.
  13. The perovskite solar cell of claim 1, wherein a work function of the perovskite layer is 5 eV or less.
  14. The perovskite solar cell of claim 1, wherein the perovskite solar cell has an open-circuit voltage of 1.000 V or more.
  15. A method of manufacturing a perovskite solar cell, the method comprising: preparing a lower electrode; forming a hole transport layer on the lower electrode; forming a perovskite layer on the hole transport layer; forming a passivation layer on the perovskite layer; forming an electron transport layer on the passivation layer; and forming an upper electrode on the electron transport layer, wherein the passivation layer comprises the compound of claim 1.

Description

Technical Field The disclosure relates to a perovskite solar cell. Background Art Perovskite solar cells are solar cell devices that use a material with a perovskite structure as a light absorber. They have most of the characteristics required for next-generation solar cells, such as high photoelectric conversion efficiency, low manufacturing cost, and the ability to be processed at low temperature and through low-cost solution processes, and are thus attracting attention as next-generation solar cells that will replace silicon solar cells. Perovskite solar cells develop various defects on a surface exposed to the outside during the thin film formation process. In the ABX3 structure, organic substances corresponding to A and halides corresponding to X escape from the ABX3 structure due to factors such as light, heat, pressure, electric field, and magnetic field, thereby forming defects such as vacancies and interstitials. Additionally, in existing methods, there may be cases where the conduction band energy level of the perovskite light-absorbing layer is lower than the conduction band energy level of the electron transport layer. In this case, there is a problem in that an additional energy-level adjustment layer must be inserted between the two layers to match the conduction band energy levels of the two layers. Disclosure Technical Problem The disclosure can provide a perovskite solar cell including a passivation layer containing a halide organic material. Solution to Problem In one aspect, the disclosure provides a perovskite solar cell including: a lower electrode; a hole transport layer formed on the lower electrode; a perovskite layer formed on the hole transport layer; a passivation layer formed on the perovskite layer; an electron transport layer formed on the passivation layer; and an upper electrode formed on the electron transport layer, wherein the passivation layer includes a compound of Formula 1: wherein, in Formula 1, R1 is hydrogen or C1-10 alkyl, R2 is F, Cl, Br, or I, and L is hydrogen or C1-10 alkylene. In an embodiment of the disclosure, R1 may be hydrogen or C1-5 alkyl, R2 may be Br, and L may be hydrogen or C1-5 alkylene. In an embodiment of the disclosure, the concentration of the compound of Formula 1 in the passivation layer may be 0.1 to 1 mM. In an embodiment of the disclosure, the lower electrode and the upper electrode may each be a transparent electrode or a metal electrode. In an embodiment of the disclosure, the transparent electrode may include ITO, IZO, AZO, or FTO, and the metal electrode may include Ag, Au, Al, Cu, SnPb, SnAgBi, or SnAgCu. In an embodiment of the disclosure, the hole transport layer may include a material selected from the group consisting of Spiro-OMeTAD, PEDOT:PSS, G-PEDOT, PANI:PSS, PANI:CSA, PDBT, P3HT, PCPDTBT, PCDTBT, PTAA, 2PACz, Me-4PACz, MoO3, V2O5, NiO, WO3, CuI, CuSCN, and combinations thereof. In an embodiment of the disclosure, the perovskite layer may include a perovskite material of Formula 2:         [Formula 2]     ABX3 wherein, in Formula 2, A is an alkali metal or a substituted or unsubstituted C1-25 alkyl group; when A is substituted, a substituent thereof is an amino group, a hydroxyl group, a cyano group, a halogen group, a nitro group or a methoxy group; B includes a cation of metal selected from the group consisting of Pb, Sn, Ge, Cu, Ni, Co, Fe, Mn, Cr, Pd, Cd, Yb, and combinations thereof, and X includes a halide anion or a chalcogenide anion. In an embodiment of the disclosure, the electron transport layer may include a material selected from the group consisting of BaSnO3, TiO2, ZrO, Al2O3, SnO2, ZnO, WO3, NbOH, Nb2O5, TiSrO3, and combinations thereof. In one embodiment of the disclosure, the perovskite solar cell may further include a lower solar cell below the lower electrode. In an embodiment of the disclosure, the lower solar cell may be a polycrystalline silicon solar cell, a crystalline silicon solar cell, a perovskite solar cell, a GaAs solar cell, a CdTe solar cell, a CIGS solar cell, a CZTS solar cell, an organic solar cell, a dye-sensitized solar cell, or a group III-V compound solar cell. In an embodiment of the disclosure may further include a buffer layer between the hole transport layer and the perovskite layer, and/or between the electron transport layer and the passivation layer. In an embodiment of the disclosure, the buffer layer may include at least one of LiF, PEAI, PEABr, 4F-PEAI, octylammonium iodide, oleylamine, 2PACz, 4PACz, Me-4PACz, and MeO-2PACz. In an embodiment of the disclosure, the work function of the perovskite layer may be 5 eV or less. In an embodiment of the disclosure, the open-circuit voltage of the perovskite solar cell may be 1.000 V or more. In another aspect, the disclosure provides a method of manufacturing a perovskite solar cell, including: preparing a lower electrode; forming a hole transport layer on the lower electrode; forming a perovskite layer on the hole transport layer;