EP-4742879-A1 - GAS CONTROL SYSTEM FOR SEMICONDUCTOR EQUIPMENT

Abstract

The gas control system for semiconductor equipment of present invention comprises a first process chamber, a first exhaust pipe, a first inlet pipe, an energy dissipating device for dissipating energy of the gas, a sub-pipe, a main pipe, a first energy controller for controlling a first energy of the gas passing through the first inlet pipe, and a second energy controller for controlling a second energy of the gas passing through the sub-pipe, wherein the gas is supplied to the energy dissipating device through the first exhaust pipe and the first inlet pipe, thereafter the gas is discharged to the outside through the sub-pipe and the main pipe, the first energy of the gas in the first inlet pipe is controlled to a constant value by the first energy controller, and the second energy of the gas in the sub-pipe is controlled to a constant value by the second energy controller.

Inventors

• SHIN, Gunho
• OH, SEUNG HWAN

Assignees

• Oh, Seung Hwan

Dates

Publication Date

20260513

Application Date

20240812

Claims (20)

1. A gas control system for semiconductor equipment, comprising: a first process chamber in which a first semiconductor process is performed; a first exhaust pipe connected to the first process chamber and through which gas used in the first semiconductor process is discharged; a first inlet pipe connected to the first exhaust pipe; an energy dissipating device connected to the first inlet pipe to dissipate energy of the gas supplied through the first inlet pipe; a sub-pipe through which the gas having passed through the energy dissipating device is discharged; a main pipe connected to the sub-pipe; a first energy controller disposed in the first inlet pipe to control a first energy of the gas passing through the first inlet pipe; and a second energy controller disposed in the sub-pipe to control a second energy of the gas passing through the sub-pipe, wherein the gas is supplied to the energy dissipating device through the first exhaust pipe and the first inlet pipe, wherein thereafter the gas is discharged to the outside through the sub-pipe and the main pipe, wherein the first energy of the gas in the first inlet pipe is controlled to a constant value by the first energy controller, and wherein the second energy of the gas in the sub-pipe is controlled to a constant value by the second energy controller.
2. The gas control system for semiconductor equipment of claim 1, wherein the first energy comprises a first pressure energy and a first kinetic energy, and wherein the first energy controller controls the first pressure energy of the gas to a constant value.
3. The gas control system for semiconductor equipment of claim 2, wherein the second energy comprises a second pressure energy and a second kinetic energy, and wherein the first kinetic energy of the gas in the first inlet pipe is less than the second kinetic energy of the gas in the sub-pipe.
4. The gas control system for semiconductor equipment of claim 1, wherein a width of the first inlet pipe is greater than a width of the sub-pipe.
5. The gas control system for semiconductor equipment of claim 1, wherein the sub-pipe includes a section whose width gradually decreases from the energy dissipating device toward the main pipe.
6. The gas control system for semiconductor equipment of claim 1, wherein the energy dissipating device comprises a scrubber, the scrubber comprising: a scrubbing chamber defining a scrubbing space for scrubbing impurities contained in the gas; a scrubbing plate disposed in the scrubbing chamber; and a plurality of scrubbing holes penetrating the scrubbing plate, wherein the gas loses energy while passing through the plurality of scrubbing holes.
7. The gas control system for semiconductor equipment of claim 6, further comprising a solution supply nozzle supplying a scrubbing solution onto an upper surface of the scrubbing plate, and wherein at least a portion of the impurities contained in the gas dissolves into the scrubbing solution on the upper surface of the scrubbing plate after the gas ascends through the plurality of scrubbing holes.
8. The gas control system for semiconductor equipment of claim 1, further comprising: a second process chamber different from the first process chamber, in which a second semiconductor process is performed; a second exhaust pipe connected to the second process chamber and through which gas used in the second semiconductor process is discharged; a second inlet pipe having one end connected to the second exhaust pipe and the other end connected to the energy dissipating device; and a third energy controller disposed in the second inlet pipe to control a third energy of the gas passing through the second inlet pipe, wherein the first energy includes a first pressure energy and a first kinetic energy, wherein the third energy includes a third pressure energy and a third kinetic energy, and wherein the first pressure energy and the third pressure energy are equal.
9. The gas control system for semiconductor equipment of claim 8, wherein the second energy includes a second pressure energy and a second kinetic energy, and wherein the third kinetic energy of the gas in the second inlet pipe is less than the second kinetic energy of the gas in the sub-pipe.
10. The gas control system for semiconductor equipment of claim 1, further comprising: a second process chamber different from the first process chamber, in which a second semiconductor process is performed, and a second exhaust pipe having one end connected to the second process chamber and the other end connected to the first inlet pipe, the second exhaust pipe discharging gas used in the second semiconductor process.
11. The gas control system for semiconductor equipment of claim 1, further comprising a first pressure sensor measuring a first pressure of the gas passing through the first inlet pipe, wherein the first energy controller includes a first rotation module capable of rotating, wherein when an absolute value of the first pressure measured by the first pressure sensor is greater than a first pressure set value, a rotation speed of the first rotation module is reduced, and wherein when the absolute value of the first pressure measured by the first pressure sensor is less than the first pressure set value, the rotation speed of the first rotation module is increased.
12. The gas control system for semiconductor equipment of claim 11, further comprising a second pressure sensor measuring a second pressure of the gas passing through the sub-pipe, wherein the second energy controller includes a second rotation module capable of rotating, wherein when an absolute value of the second pressure measured by the second pressure sensor is greater than a second set value, a rotation speed of the second rotation module is reduced, and wherein when the absolute value of the second pressure measured by the second pressure sensor is less than the second set value, the rotation speed of the second rotation module is increased.
13. The gas control system for semiconductor equipment of claim 12, wherein the first pressure remains constant even if the rotation speed of the second rotation module is changed.
14. A gas control system for semiconductor equipment, comprising: a plurality of process chambers in which semiconductor processes are performed; a plurality of exhaust pipes connected respectively to the plurality of process chambers and discharging gas used in the semiconductor processes performed in the plurality of process chambers; an inlet pipe connected to all of the plurality of exhaust pipes; an energy dissipating device connected to the inlet pipe to dissipate energy of the gas supplied through the inlet pipe; a sub-pipe through which the gas having passed through the energy dissipating device is discharged; a main pipe connected to the sub-pipe; and an energy controller disposed in the sub-pipe to control energy of the gas passing through the sub-pipe, wherein the gas is supplied to the energy dissipating device through the plurality of exhaust pipes and the inlet pipe, wherein thereafter the gas is discharged to the outside through the sub-pipe and the main pipe, and wherein a ratio of a sum of cross-sectional areas of the plurality of exhaust pipes to a cross-sectional area of the sub-pipe at a connection portion between the main pipe and the sub-pipe is between 2 and 10.
15. The gas control system for semiconductor equipment of claim 14, wherein a cross-sectional area of the sub-pipe remains constant from the energy dissipating device toward the main pipe.
16. The gas control system for semiconductor equipment of claim 14, wherein the energy dissipating device comprises a scrubber, the scrubber comprising: a scrubbing chamber defining a scrubbing space for scrubbing impurities contained in the gas; a scrubbing plate disposed in the scrubbing chamber; and a plurality of scrubbing holes penetrating the scrubbing plate, wherein the gas loses energy while passing through the plurality of scrubbing holes.
17. The gas control system for semiconductor equipment of claim 16, further comprising a solution supply nozzle supplying a scrubbing solution onto an upper surface of the scrubbing plate, and wherein at least a portion of the impurities contained in the gas dissolves into the scrubbing solution on the upper surface of the scrubbing plate after the gas ascends through the plurality of scrubbing holes.
18. A gas control system for semiconductor equipment, comprising: a process chamber in which a semiconductor process is performed; an exhaust pipe connected to the process chamber and through which gas used in the semiconductor process is discharged; an inlet pipe connected to the exhaust pipe; an energy dissipating device connected to the inlet pipe to dissipate energy of the gas supplied through the inlet pipe; a sub-pipe through which the gas having passed through the energy dissipating device is discharged; a main pipe connected to the sub-pipe; a velocity sensor that measures a flow velocity of the gas passing through the sub-pipe; a pressure sensor that measures a pressure of the gas passing through the sub-pipe; and an energy controller disposed in the sub-pipe to control energy of the gas passing through the sub-pipe and including a rotation module capable of rotating, wherein the gas is supplied to the energy dissipating device through the exhaust pipe and the inlet pipe, wherein thereafter the gas is discharged to the outside through the sub-pipe and the main pipe, wherein the energy of the gas includes a pressure energy and a kinetic energy, wherein the kinetic energy of the gas is proportional to the flow velocity of the gas, wherein the pressure energy of the gas is proportional to the pressure of the gas, wherein the kinetic energy of the gas is calculated based on the flow velocity measured by the velocity sensor, wherein the pressure energy of the gas is calculated based on the pressure measured by the pressure sensor, wherein when a sum of the kinetic energy and the pressure energy of the gas exceeds a preset value, a rotation speed of the rotation module of the energy controller is reduced, and wherein when the sum of the kinetic energy and the pressure energy of the gas is less than the preset value, the rotation speed of the rotation module of the energy controller is increased.
19. The gas control system for semiconductor equipment of claim 18, wherein the energy dissipating device comprises a scrubber, the scrubber comprising: a scrubbing chamber defining a scrubbing space for scrubbing impurities contained in the gas; a scrubbing plate disposed in the scrubbing chamber; and a plurality of scrubbing holes penetrating the scrubbing plate, wherein the gas loses energy while passing through the plurality of scrubbing holes.
20. The gas control system for semiconductor equipment of claim 19, further comprising a solution supply nozzle supplying a scrubbing solution onto an upper surface of the scrubbing plate, and wherein at least a portion of the impurities contained in the gas dissolves into the scrubbing solution on the upper surface of the scrubbing plate after the gas ascends through the plurality of scrubbing holes.

Description

TECHNICAL FIELD The present invention relates to a gas control system for semiconductor equipment. Specifically, the present invention relates to the gas control system for semiconductor equipment that improves the stability of a semiconductor process chamber and the spatial efficiency of a semiconductor production line by controlling the pressure of gas discharged after a semiconductor process is performed. BACKGROUND ART Conventionally, a semiconductor manufacturing plant (semiconductor production line) may include manufacturing equipment and utilities necessary for operating the equipment. The utilities may include various pipes, conduits, wiring, facilities, and ducts for supplying electricity, gas, water, chemicals, and the like. The pipes, conduits, wiring, and other components may be densely installed within a limited space. When a large number of pipes are connected to a utility main pipe, an overload may be applied to the utility main pipe, whereas when only a small number of pipes are connected to the utility main pipe, the spatial efficiency of the semiconductor manufacturing plant may be reduced. Accordingly, in recent years, research has been continuously conducted to improve the plant efficiency of semiconductor manufacturing plants by increasing the number of pipes connected to the utility main pipe, or the number of semiconductor process chambers connected to the utility main pipe, while reducing the load applied to the utility main pipe. DESCRIPTION OF EMBODIMENTS TECHNICAL PROBLEM The technical problem to be solved by the present invention is to provide a gas control system for semiconductor equipment that controls the energy of gas passing through a sub-pipe connected to a main pipe. By using the gas control system for semiconductor equipment according to the present invention, a semiconductor production line with improved spatial efficiency may be provided by increasing the number of semiconductor process chambers relative to the number of main pipes. The problems that the present invention is trying to solve are not limited to the problems mentioned above, and other problems that are not mentioned can be clearly understood by those skilled in the art from the description below. SOLUTION TO PROBLEM A gas control system for semiconductor equipment according to some embodiments of the present invention for achieving the above technical problem comprises a first process chamber in which a first semiconductor process is performed, a first exhaust pipe connected to the first process chamber and through which gas used in the first semiconductor process is discharged, a first inlet pipe connected to the first exhaust pipe, an energy dissipating device connected to the first inlet pipe to dissipate energy of the gas supplied through the first inlet pipe, a sub-pipe through which the gas having passed through the energy dissipating device is discharged, a main pipe connected to the sub-pipe, a first energy controller disposed in the first inlet pipe to control a first energy of the gas passing through the first inlet pipe, and a second energy controller disposed in the sub-pipe to control a second energy of the gas passing through the sub-pipe, wherein the gas is supplied to the energy dissipating device through the first exhaust pipe and the first inlet pipe, wherein thereafter the gas is discharged to the outside through the sub-pipe and the main pipe, wherein the first energy of the gas in the first inlet pipe is controlled to a constant value by the first energy controller, and wherein the second energy of the gas in the sub-pipe is controlled to a constant value by the second energy controller. The gas control system for semiconductor equipment with improved stability may be provided because the energy of the gas inside the pipe is constantly controlled. In some embodiments, wherein the first energy comprises a first pressure energy and a first kinetic energy, and wherein the first energy controller controls the first pressure energy of the gas to a constant value. In some embodiments, wherein the second energy comprises a second pressure energy and a second kinetic energy, and wherein the first kinetic energy of the gas in the first inlet pipe is less than the second kinetic energy of the gas in the sub-pipe. In some embodiments, wherein a width of the first inlet pipe is greater than a width of the sub-pipe. In some embodiments, wherein the sub-pipe includes a section whose width gradually decreases from the energy dissipating device toward the main pipe. In some embodiments, wherein the energy dissipating device comprises a scrubber, the scrubber comprising a scrubbing chamber defining a scrubbing space for scrubbing impurities contained in the gas, a scrubbing plate disposed in the scrubbing chamber and a plurality of scrubbing holes penetrating the scrubbing plate, wherein the gas loses energy while passing through the plurality of scrubbing holes. In some embodiments, the gas control s