MATRIX CONTAINING A MULTIPLE NUMBER OF NON-VOLATILE MEMORY CELLS

Abstract

The invention relates to a memory matrix comprising a plurality of memory cells (1) having a first electrode (2), a second electrode (3) and a layer (4) of crystalline active material disposed between the first electrode (2) and the second electrode and having a thickness between 2nm and 20nm, the active material being either hafnium dioxide doped with a dopant element selected from one of the following: Si, Al, Zr, Gd, Ge, Y or N, or an undoped HfxZr1-xO2 alloy or one doped with a dopant element selected from one of the following: Si, Al, Gd, Ge, Y or N, with 0<x<1; at least one of said first or second electrodes (3) being formed of at least two layers comprising a first conductive layer (5) in contact with the active material layer and chosen to create oxygen vacancies in the active material layer (4) and a second conductive layer (6) disposed on the first conductive layer. Figure 2

Inventors

GRENOUILLET LAURENT
COIGNUS JEAN
MARTIN SIMON

Assignees

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Dates

Publication Date: 20260501
Application Date: 20230127
Priority Date: 20230127