FR-3168317-A1 - Half-bridge power module made using isolated GaN-on-silicon transistors
FR3168317A1FR 3168317 A1FR3168317 A1FR 3168317A1FR-3168317-A1
Abstract
The invention relates to a half-bridge power module comprising a substrate structured in three layers: a first layer of p-doped silicon, a second layer of p-doped silicon with a lower doping level, and a third layer of n-doped silicon. The module integrates two active components. The first component, located in a first zone, includes a heterojunction, a box, and two terminals for a voltage. The second component, located in a second zone, includes a heterojunction and a box isolated from the first by deep insulating trenches reaching the first layer. Each trench comprises a dielectric encapsulation layer and a filler material. Figure for abstract: Fig. 1a
Inventors
- Julien BUCKLEY
- René Escoffier
- Florent GRECO
Assignees
- Commissariat à l'Energie Atomique et aux Energies Alternatives
Dates
- Publication Date
- 20260508
- Application Date
- 20241107