JP-2022514968-A5 -

Dates

Publication Date

20221223

Application Date

20191220

Description

Each emitter includes a lower mirror 25, an active layer 27 , an aperture-forming layer 29, and an upper mirror 31, as described with reference to Figures 1, 2a, and 2b. The aperture-forming layer 29 also includes an oxide layer 29x and a window layer 29w, and the current flow is limited to the window layer 29w. The basic structure of each emitter is the same as that of the emitter 150 described above, except for the insulating region 37 formed by ion implantation.