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JP-2026074613-A - Light-emitting device and method for manufacturing the same

JP2026074613AJP 2026074613 AJP2026074613 AJP 2026074613AJP-2026074613-A

Abstract

[Problem] To provide a method for manufacturing a light-emitting device that can reduce the probability of cracking occurring in semiconductor elements. [Solution] A method for manufacturing a light-emitting device, comprising the steps of: preparing a laminate including a substrate having a crystalline structure and a plurality of semiconductor layers stacked on the substrate; forming grooves with branched ends in the laminate and obtaining semiconductor elements by dividing from the grooves; and bonding the semiconductor elements to a submount. [Selection Diagram] Figure 16

Inventors

  • 乗島 秀幸
  • 粟飯原 大士

Assignees

  • 日亜化学工業株式会社

Dates

Publication Date
20260507
Application Date
20241021

Claims (11)

  1. A step of preparing a laminate including a substrate having a crystalline structure and a plurality of semiconductor layers stacked on the substrate, A step of obtaining a semiconductor element by forming a groove with a branched tip in the laminate and dividing it starting from the groove, A method for manufacturing a light-emitting device, comprising the step of joining the semiconductor element to a submount.
  2. The method for manufacturing a light-emitting device according to claim 1, wherein the submount is a diamond submount.
  3. The laminate has a first main surface and a second main surface, The method for manufacturing a light-emitting device according to claim 1, wherein in the division step, a groove is formed that reaches the first main surface but does not reach the second main surface, and the laminate on which the groove is formed is pressed from the side of the second main surface to generate a crack starting from the groove, thereby dividing the laminate.
  4. The method for manufacturing a light-emitting device according to claim 1, wherein, in the division step, the direction in which the laminate is divided is different from the direction of easy cleavage of the substrate.
  5. The planar shape of the aforementioned semiconductor element has a short side and a long side. The method for manufacturing a light-emitting device according to claim 1, wherein the division step is a step of forming the longitudinal side surface.
  6. The method for manufacturing a light-emitting device according to claim 5, comprising the step of forming the short-side surface by dividing the laminate by cleavage.
  7. The plurality of semiconductor layers include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer sandwiched between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The method for manufacturing a light-emitting device according to any one of claims 1 to 6, wherein the semiconductor element is a semiconductor laser element.
  8. The method for manufacturing a light-emitting device according to claim 1, wherein the length of the side surface of the semiconductor element formed by the division step is 3 mm or more.
  9. A light-emitting device comprising a semiconductor element and a diamond submount on which the semiconductor element is fixed, The length of the side surface of the semiconductor element is 3 mm or more. The semiconductor element comprises a laminate having longitudinal sides, transverse sides, a first main surface, and a second main surface. The longitudinal side surface has a first region including a rough surface and a second region including a plurality of striated steps extending from the first region toward the second main surface, A light-emitting device having a plurality of recesses provided at the boundary between the first region and the second region.
  10. The longitudinal side surface has a first edge intersecting the first main surface, a second edge intersecting the transverse side surface, and a third edge intersecting the second main surface. The light-emitting device according to claim 9, wherein the first region has a first boundary coinciding with the first edge, a second boundary away from the second edge and facing the second edge, and a third boundary away from the third edge and facing the third edge, and the plurality of recesses are provided on the third boundary.
  11. The light-emitting device according to claim 9 or 10, wherein at least five different locations on the longitudinal side surface, the number of the plurality of recesses in a width of 20 μm is four or more.

Description

This disclosure relates to a light-emitting device and a method for manufacturing the same. Patent Document 1 describes a method for obtaining individual elements by forming dividing guide grooves in a wafer containing a group III nitride semiconductor substrate, and then dividing the wafer along the dividing guide grooves. Japanese Patent Publication No. 2009-81428 This is a flowchart showing a method for manufacturing a semiconductor device according to one embodiment.This is a schematic plan view showing a method for manufacturing a semiconductor device according to one embodiment.This is a cross-sectional view taken along line III-III in Figure 2.This is a schematic plan view showing a method for manufacturing a semiconductor device according to one embodiment.This is a schematic plan view showing a method for manufacturing a semiconductor device according to one embodiment.This is a cross-sectional view along the line VI-VI in Figure 5.This is a partially enlarged view showing an example of the groove shape.This is a schematic cross-sectional view showing a semiconductor device manufacturing method according to one embodiment.This is a schematic plan view showing a semiconductor device according to one embodiment.Figure 9 shows a cross-sectional view taken along the X-X line.This is a schematic perspective view showing a semiconductor device according to one embodiment.This is a schematic diagram showing a side view of a semiconductor device according to one embodiment.This is an optical microscope image of a groove in the semiconductor device manufacturing method of Reference Example 2.This is a scanning electron microscope (SEM) image of the side of the semiconductor device in Reference Example 2.This is a flowchart showing a method for manufacturing a light-emitting device according to one embodiment.This is a schematic cross-sectional view showing a light-emitting device according to one embodiment. The following describes one embodiment of the present invention with reference to the drawings. Note that the same elements are denoted by the same reference numerals in each drawing. Figure 1 is a flowchart illustrating the manufacturing method of the semiconductor device according to this embodiment. Figures 2 to 8 are schematic diagrams illustrating the manufacturing method of the semiconductor device according to this embodiment. Figures 9 to 12 are schematic diagrams illustrating the semiconductor device according to this embodiment. As shown in Figure 1, the semiconductor device manufacturing method of this embodiment includes a laminate preparation step S101 and a splitting step S103. In the laminate preparation step S101, a laminate 10 is prepared, comprising a substrate 11 having a crystalline structure and a plurality of semiconductor layers 12 laminated on the substrate 11. In the splitting step S103, grooves 20 with branched ends are formed in the laminate 10, and the laminate is split starting from the grooves 20. According to the semiconductor device manufacturing method of this embodiment, the probability of cracking at a location outside the grooves 20 can be reduced. The semiconductor device manufacturing method of this embodiment may further include a cleavage step S102. In a method of dividing an object using a groove as a starting point, making the groove deeper makes division easier, but the easier it is to divide, the higher the possibility of the object breaking at unintended times, such as during transportation. On the other hand, if the groove depth is kept low, the object may break at a location outside the groove. In the case of a laminate 10 in this embodiment, which includes a substrate 11 having a crystalline structure, if the groove depth is too shallow, the substrate 11 may break in an unintended direction due to the influence of its crystalline structure. Focusing on the shape of the groove 20, we found that when dividing the laminate 10 containing the substrate 11 with a crystalline structure, making the groove 20 branched at its tip reduces the probability of cracking outside the groove 20. This is thought to be because the branched tip of the groove 20 allows cracks to extend from any of these points, thereby reducing the possibility of cracking outside the groove 20. In other words, the branched tip of the groove 20 expands the effective width in which the groove 20 can act as a guide for division. (Laminate preparation process S101) First, the laminate preparation step S101 is performed. In the laminate preparation step S101, the laminate 10 is prepared as shown in Figures 2 and 3. Figure 2 is a schematic plan view showing the method for manufacturing a semiconductor device. Figure 3 is a cross-sectional view taken along line III-III in Figure 2. In each figure, the X, Y, and Z directions are shown, respectively. The plan view is a view from the Z direction. The X direction is the direction of cleavage in the cleavage step S102 described later. The Y direction is th