Search

JP-2026074642-A - Substrate processing method and substrate processing apparatus

JP2026074642AJP 2026074642 AJP2026074642 AJP 2026074642AJP-2026074642-A

Abstract

[Problem] To provide a technology that can selectively crystallize silicon-containing films. [Solution] A substrate processing method according to one aspect of the present disclosure comprises preparing a substrate having an amorphous first silicon-containing film that does not come into contact with an amorphous first film, and an amorphous second silicon-containing film that comes into contact with the first film, and heat-treating the substrate at a temperature above the crystallization temperature of the first film and below the crystallization temperature of the first silicon-containing film, wherein the crystallization temperature of the first film is lower than the crystallization temperature of the first silicon-containing film. [Selection Diagram] Figure 1

Inventors

  • バス トウヒン シュブラ
  • 藤川 尋斗
  • 熊谷 圭太
  • 遠藤 篤史

Assignees

  • 東京エレクトロン株式会社

Dates

Publication Date
20260507
Application Date
20241021

Claims (9)

  1. A substrate is prepared having an amorphous first silicon-containing film that does not come into contact with the amorphous first film, and an amorphous second silicon-containing film that comes into contact with the first film. The substrate is heat-treated at a temperature above the crystallization temperature of the first film and below the crystallization temperature of the first silicon-containing film. It has, The crystallization temperature of the first film is lower than the crystallization temperature of the first silicon-containing film. Substrate processing method.
  2. Heat treatment of the aforementioned substrate is The substrate is heat-treated at a first temperature, The substrate heat-treated at the first temperature is then heat-treated at a second temperature higher than the first temperature, including, The substrate processing method according to claim 1.
  3. Preparing the aforementioned substrate is Forming an insulating film on the first silicon-containing film, Forming the second silicon-containing film on the insulating film, Forming the first film on the second silicon-containing film, including, The substrate processing method according to claim 1.
  4. The first silicon-containing film has an upper surface and a side surface connected to the upper surface, The insulating film is formed to cover the upper surface and the side surface of the first silicon-containing film. The substrate processing method according to claim 3.
  5. The second silicon-containing film is of the same film type as the first silicon-containing film. A substrate processing method according to any one of claims 1 to 4.
  6. The first silicon-containing film and the second silicon-containing film are silicon films. The substrate processing method according to claim 5.
  7. The first film contains germanium, A substrate processing method according to any one of claims 1 to 4.
  8. The first film is a germanium film or a silicon-germanium film. The substrate processing method according to claim 7.
  9. A substrate processing apparatus, A processing container for housing the substrate, A heating unit for heating the substrate housed in the processing container, Control unit and Equipped with, The control unit is configured to control the substrate processing apparatus to house a substrate having an amorphous first silicon-containing film that does not come into contact with an amorphous first film, and an amorphous second silicon-containing film that comes into contact with the first film, within the processing container. The control unit is configured to control the heating unit to heat-treat the substrate at a temperature above the crystallization temperature of the first film and below the crystallization temperature of the first silicon-containing film. The crystallization temperature of the first film is lower than the crystallization temperature of the first silicon-containing film. Circuit board processing equipment.

Description

This disclosure relates to a substrate processing method and a substrate processing apparatus. Patent Document 1 discloses a technique for forming an amorphous germanium film on an amorphous silicon film and then crystallizing the amorphous germanium film by heat treatment at an appropriate temperature, followed by crystallizing the amorphous silicon film. Japanese Patent Publication No. 2020-87993 This is a flowchart showing the substrate processing method according to the embodiment.This is a cross-sectional view (1) showing a substrate processing method according to an embodiment.This is a cross-sectional view (2) showing the substrate processing method according to the embodiment.This is a cross-sectional view (3) showing the substrate processing method according to the embodiment.This is a vertical cross-sectional view showing a substrate processing apparatus according to an embodiment.This is a horizontal cross-sectional view showing a substrate processing apparatus according to an embodiment. The following describes exemplary embodiments of this disclosure, not limited to those described herein, with reference to the attached drawings. In all attached drawings, identical or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted. [Substrate processing method] The substrate processing method according to the embodiment will be described with reference to Figures 1 to 4. Figure 1 is a flowchart of the substrate processing method according to the embodiment. Figures 2 to 4 are cross-sectional views showing the substrate processing method according to the embodiment. The substrate processing method according to the embodiment has steps S11 to S13 shown in Figure 1. In step S11, the substrate 100 is prepared as shown in Figure 2. The substrate 100 has a silicon film 110, a silicon oxide film 120, a silicon film 130, and a germanium film 150. The silicon film 110 is amorphous. The silicon film 110 is undoped. The silicon film 110 has an upper surface 111, a side surface 112 connected to the upper surface 111, and a lower surface 113 connected to the side surface 112. The silicon film 110 forms a recess 114 with two adjacent side surfaces 112 and the lower surface 113 connected to both of these side surfaces 112. For example, the silicon film 110 can be formed by chemical vapor deposition (CVD) using a silicon source gas. The silicon film 110 is an example of a first silicon-containing film. The silicon oxide film 120 is provided on top of the silicon film 110. The silicon oxide film 120 covers the upper surface 111, side surfaces 112, and lower surface 113 of the silicon film 110. The silicon oxide film 120 is provided along the upper surface 111, side surfaces 112, and lower surface 113 of the silicon film 110. The silicon oxide film 120 is provided so as not to block the opening of the recess 114. For example, the silicon oxide film 120 can be formed by chemical vapor deposition (QV) using a silicon source gas and an oxidizing gas, atomic layer deposition (ALD), etc. The silicon oxide film 120 is an example of an insulating film. The silicon film 130 is amorphous. The silicon film 130 is undoped. The silicon film 130 is provided on top of the silicon oxide film 120. The silicon film 130 covers the surface of the silicon oxide film 120. The silicon film 130 fills the recesses 114. For example, the silicon film 130 can be formed by chemical vapor deposition using a silicon source gas. The silicon film 130 is an example of a second silicon-containing film. The germanium film 150 is amorphous. The germanium film 150 is undoped. The crystallization temperature of the germanium film 150 is lower than that of the silicon film 110 and the silicon film 130. The germanium film 150 is provided on top of the silicon film 130. The germanium film 150 covers the surface of the silicon film 130. The germanium film 150 is in contact with the silicon film 130. The germanium film 150 is provided with a silicon oxide film 120 sandwiched between it and the silicon film 110. The germanium film 150 is not in contact with the silicon film 110. For example, the germanium film 150 can be formed by chemical vapor deposition using a germanium raw material gas. Before forming the germanium film 150, a treatment to remove the native oxide film from the surface of the silicon film 130 may be performed. The germanium film 150 is an example of the first film. In step S12, the substrate 100 is heat-treated at a first temperature, which is above the crystallization temperature of the germanium film 150 and below the crystallization temperatures of the silicon films 110 and 130, under the atmosphere of a heat treatment gas. As a result, as shown in Figure 3, the germanium film 150 crystallizes to form a polycrystalline germanium film 160. Furthermore, induced by the crystallization of the germanium film 150, the crystallization of the silicon film 130 progresse