JP-2026075116-A - Components for semiconductor manufacturing equipment

JP2026075116AJP 2026075116 AJP2026075116 AJP 2026075116AJP-2026075116-A

Abstract

[Problem] To increase the withstand voltage between the power supply component and the base plate, and to suppress variations in withstand voltage between products. [Solution] The wafer mounting table 10 comprises a ceramic plate 20 with a built-in electrostatic electrode 22, a base plate 30 bonded to the lower surface 23 of the ceramic plate 20 via a bonding layer 40 and containing a refrigerant flow path 32, a base plate through hole 34 that penetrates the base plate 30 vertically at a position that does not interfere with the refrigerant flow path 32 and has an opening 34c on the ceramic plate 20 side that is chamfered with a diameter of C0.5 or more, an insulating tube 50 inserted into the base plate through hole 34, a power supply member 70 inserted into the insulating tube 50 and whose tip is electrically connected to the electrostatic electrode 22, and an adhesive layer 60 provided between the inner circumferential surface 34b of the base plate through hole 34 including the chamfered opening 34c and the outer circumferential surface 50b of the insulating tube 50. [Selection Diagram] Figure 3

Inventors

井上靖也
久野達也
山越晶太
宮本寛大

Assignees

ＮＧＫ株式会社

Dates

Publication Date: 20260507
Application Date: 20260227
Priority Date: 20240903

Claims (6)

A ceramic plate having a wafer mounting surface on its upper surface and containing electrodes, A base plate is bonded to the lower surface of the ceramic plate via a bonding layer and incorporates a refrigerant flow path, A base plate through-hole that penetrates the base plate vertically at a position that does not interfere with the refrigerant flow path, and has an opening on the ceramic plate side that is chamfered with a C0.5 or larger diameter, The insulating tube inserted into the through hole of the base plate, A power supply member is inserted into the insulating tube, and its tip is electrically connected to the electrode, An adhesive layer is provided between the inner circumferential surface of the through-hole in the base plate, including the C-chamfered opening, and the outer circumferential surface of the insulating tube. A component for semiconductor manufacturing equipment, equipped with the following features.
When the semiconductor manufacturing apparatus component is viewed from above, the opening of the through-hole in the base plate and the refrigerant flow path do not overlap. A component for semiconductor manufacturing equipment according to claim 1.
The aforementioned chamfered opening is C2 or less. A component for semiconductor manufacturing equipment according to claim 1 or 2.
The adhesive layer has air bubbles between the opening of the through-hole in the base plate and the outer surface of the insulating tube, and the air bubbles are located at a position spaced apart from the insulating tube. A component for semiconductor manufacturing equipment according to claim 1 or 2.
The bonding layer has bonding layer through holes at positions opposite to the base plate through holes, The distance from the outer edge of the opening in the base plate through hole to the inner circumferential surface of the bonding layer through hole is 0.5 mm or less. A component for semiconductor manufacturing equipment according to claim 1 or 2.
The thermal conductivity of the adhesive layer is 0.5 W/mK or higher. A component for semiconductor manufacturing equipment according to claim 1 or 2.

Description

This invention relates to a component for semiconductor manufacturing equipment. Conventionally, semiconductor manufacturing equipment components comprising a ceramic plate, a base plate, a through-hole in the base plate, and a power supply member are known. For example, in the semiconductor manufacturing equipment component described in Patent Document 1, the ceramic plate has a wafer mounting surface on its upper surface and incorporates heater electrodes. The base plate is bonded to the lower surface of the ceramic plate via a bonding layer and incorporates a refrigerant flow path. The through-hole in the base plate penetrates the base plate vertically at a position that does not interfere with the refrigerant flow path and has a chamfered opening on the ceramic plate side. The power supply member is inserted into the through-hole in the base plate, and its tip is electrically connected to the heater electrodes. It has also been described that the through-hole in the base plate may include an insulating tube through which the power supply member is inserted. Japanese Patent Publication No. 2023-27641 Plan view of the wafer mounting stage 10.A cross-sectional view along line A-A in Figure 1.A magnified view of a portion of Figure 2.An explanatory diagram showing the bonding process of the insulating tube 50 in this embodiment.An explanatory diagram showing the bonding process of the comparative insulating tube 50.A graph showing the relationship between the C value of the opening 34c and voltage-bearing related parameters.A partially enlarged view of a longitudinal section of another embodiment.A partially enlarged view of a longitudinal section of another embodiment. Preferred embodiments of the present invention will be described with reference to the drawings. Figure 1 is a plan view of the wafer mounting stage 10, Figure 2 is a cross-sectional view taken along line A-A in Figure 1, and Figure 3 is a partially enlarged view of Figure 2 (enlarged view within the frame indicated by the dashed line). The wafer mounting stage 10 is an example of a semiconductor manufacturing apparatus component of the present invention, and as shown in Figure 2, it comprises a ceramic plate 20, a base plate 30, a bonding layer 40, a base plate through hole 34, an insulating tube 50, and a power supply member 70. The ceramic plate 20 is a ceramic disc (for example, 300 mm in diameter and 5 mm thick) made of an alumina sintered body or an aluminum nitride sintered body. The upper surface of the ceramic plate 20 is the wafer mounting surface 21 on which the wafer W is placed. The ceramic plate 20 incorporates electrostatic electrodes 22. Although not shown in the figure, an annular sealing band is formed along the outer edge of the wafer mounting surface 21 of the ceramic plate 20, and multiple small circular protrusions are formed on the entire inner surface of the sealing band. The electrostatic electrodes 22 are planar mesh electrodes and are connected to an external DC power supply (not shown) via a power supply member 70. When a DC voltage is applied to the electrostatic electrodes 22, the wafer W is attracted and fixed to the wafer mounting surface 21 by electrostatic attraction force, and when the DC voltage is removed, the attraction and fixation of the wafer W to the wafer mounting surface 21 is released. The base plate 30 is a disc with good electrical and thermal conductivity (for example, a disc with the same or larger diameter as the ceramic plate 20 and a thickness of 25 mm). A refrigerant flow path 32 is formed inside the base plate 30 through which the refrigerant circulates. The refrigerant flowing through the refrigerant flow path 32 is preferably a liquid and preferably electrically insulating. Examples of electrically insulating liquids include fluorine-based inert liquids. As shown in Figure 1, the refrigerant flow path 32 is formed in a spiral shape in a single continuous line across the entire base plate 30 in a plan view, from one end (inlet 32in) to the other end (outlet 32out). The inlet 32in and outlet 32out of the refrigerant flow path 32 are connected to a supply port and a recovery port of an external refrigerant device (not shown), respectively. The refrigerant supplied from the supply port of the external refrigerant device to the inlet 32in of the refrigerant flow path 32 passes through the refrigerant flow path 32, returns to the recovery port of the external refrigerant device from the outlet 32out of the refrigerant flow path 32, is temperature-adjusted, and then supplied again from the supply port to the inlet 32in of the refrigerant flow path 32. The base plate 30 is connected to a high-frequency (RF) power supply and is also used as an RF electrode. The material of the base plate 30 can be, for example, a metal or a composite material of metal and ceramic. Examples of metal materials include Al, Ti, Mo, or alloys thereof. Examples of composite materials of metal and ceramic include metal