JP-2026075254-A - Film deposition apparatus and film deposition method

Abstract

[Problem] To provide a technology that can measure the pressure in a diffusion space with high accuracy. [Solution] A film-forming apparatus according to one aspect of the present disclosure comprises a processing container capable of reducing the internal pressure, a shower head for supplying gas into the processing container, and a pressure sensor, wherein the shower head includes a lower member having a plurality of gas holes formed therein and an upper member forming a diffusion space between itself and the lower member for diffusing the gas, and the pressure sensor is provided inside the upper member, with its pressure sensing surface exposed to the diffusion space. [Selection Diagram] Figure 1

Inventors

• 深見 駿
• 田中 雅之

Assignees

• 東京エレクトロン株式会社

Dates

Publication Date

20260508

Application Date

20241022

Claims (6)

1. A processing container that can reduce the internal pressure, A shower head that supplies gas into the processing container, Pressure sensor and Equipped with, The shower head includes a lower member having a plurality of gas holes and an upper member that forms a diffusion space between itself and the lower member for diffusing the gas. The pressure sensor is provided inside the upper member, and its pressure sensing surface is exposed to the diffusion space. Film deposition equipment.
2. The difference between the height of the pressure sensing surface of the pressure sensor and the height of the lower surface of the upper member is 5 mm or less. The film deposition apparatus according to claim 1.
3. The pressure sensor is provided such that the pressure sensing surface is flush with the lower surface of the upper member. The film deposition apparatus according to claim 1.
4. The pressure sensor is provided at a position away from the center of the shower head. The film deposition apparatus according to claim 1.
5. A sealing member that seals the gap between the upper member and the pressure sensor, A seal gas supply channel is formed by the upper member, the pressure sensor, and the seal member, and supplies seal gas to a space separated from the diffusion space by the seal member, A seal gas discharge channel for discharging the seal gas supplied to the space, Equipped with, A film deposition apparatus according to any one of claims 1 to 4.
6. A film deposition apparatus comprising a processing container capable of reducing the internal pressure, a shower head for supplying gas into the processing container, and a pressure sensor, wherein the method for deposition is as follows: The shower head includes a lower member having a plurality of gas holes and an upper member that forms a diffusion space between itself and the lower member for diffusing the gas. The pressure sensor is provided inside the upper member, with its pressure sensing surface exposed to the diffusion space. The pressure inside the processing container is adjusted based on the measurement value of the pressure sensor. Film formation method.

Description

This disclosure relates to a film deposition apparatus and a film deposition method. A technology has been disclosed in which a pressure sensor and the space to be measured are connected by a tubular member, and the pressure in the space to be measured is indirectly measured using the pressure sensor. Japanese Patent Publication No. 2023-173097Patent No. 7386738Japanese Patent Publication No. 2022-89151 This is a cross-sectional view showing a film deposition apparatus according to an embodiment.Figure 1 is a cross-sectional view showing the showerhead of the film deposition apparatus.Figure 1 is a perspective view showing the showerhead of the film deposition apparatus.Figure 1 shows a view of the showerhead of the film deposition apparatus from below.This is a cross-sectional view (part 1) showing the pressure measurement section of the film deposition apparatus shown in Figure 1.This is a cross-sectional view (part 2) showing the pressure measurement section of the film deposition apparatus in Figure 1.This figure shows the film formation method according to the present invention. The following describes exemplary embodiments of this disclosure, not limited to those described herein, with reference to the attached drawings. In all attached drawings, identical or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted. [Film forming equipment] The film deposition apparatus 100 according to the embodiment will be described with reference to Figures 1 to 4. Figure 1 is a cross-sectional view showing the film deposition apparatus 100 according to the embodiment. Figure 2 is a cross-sectional view showing the shower head 3 of the film deposition apparatus 100 in Figure 1. Figure 3 is a perspective view showing the shower head 3 of the film deposition apparatus 100 in Figure 1. Figure 4 is a view of the shower head 3 of the film deposition apparatus 100 in Figure 1 from below. The film deposition apparatus 100 is configured to perform film deposition using the atomic layer deposition (ALD) method. The apparatus 100 comprises a processing container 1, a mounting table 2, a shower head 3, a gas supply unit 4, a gas introduction unit 5, an exhaust unit 6, a pressure measuring unit 7, and a control circuit 9. The processing container 1 is a vacuum container capable of reducing internal pressure. The processing container 1 is made of a metal material such as aluminum. The processing container 1 has a substantially cylindrical shape. The processing container 1 houses a substrate W. The substrate W is, for example, a semiconductor wafer. An inlet/outlet 11 for loading and unloading the substrate W is provided on the side wall of the processing container 1. The inlet/outlet 11 is opened and closed by a gate valve 12. An annular exhaust duct 13 with a rectangular cross-section is provided on the body of the processing container 1. A slit 13a is provided along the inner circumference of the exhaust duct 13. An exhaust port 13b is provided on the outer wall of the exhaust duct 13. A top plate 14 is provided on the upper surface of the exhaust duct 13 so as to close the upper opening of the processing container 1. The space between the exhaust duct 13 and the top plate 14 is airtightly sealed with a sealing member 15. The sealing member 15 is, for example, an O-ring. The mounting table 2 horizontally supports the substrate W within the processing container 1. The mounting table 2 has a disc shape larger than the substrate W. The mounting table 2 is made of a ceramic material such as aluminum nitride, or a metallic material such as aluminum or nickel alloy. A heater 21 for heating the substrate W is embedded inside the mounting table 2. The heater 21 is powered by a heater power supply (not shown) and generates heat. The output of the heater 21 is controlled by the temperature signal of a thermocouple (not shown) provided near the upper surface of the mounting table 2, thereby controlling the substrate W to a predetermined temperature. The mounting table 2 is provided with a cover member 22 made of ceramic material such as alumina, covering the outer peripheral region of the upper surface and the sides. The mounting platform 2 is supported by a support member 23. The support member 23 extends from the center of the bottom surface of the mounting platform 2, through a hole formed in the bottom wall of the processing container 1, and downwards to the processing container 1. Its lower end is connected to a lifting mechanism 24. The mounting platform 2 moves up and down by the lifting mechanism 24 between the processing position shown in Figure 1 and the transport position shown by the dashed line below it, where the substrate W can be transported. A flange portion 25 is attached to the support member 23 below the processing container 1. A bellows 26 is provided between the bottom surface of the processing container 1 and the flange portion 25. The