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JP-2026075402-A - Electrostatic chuck, substrate support, and plasma processing apparatus

JP2026075402AJP 2026075402 AJP2026075402 AJP 2026075402AJP-2026075402-A

Abstract

[Problem] To provide a technology that suppresses the rise in temperature at the edges of a substrate. [Solution] The dielectric member of the disclosed electrostatic chuck includes a first portion and a second portion. The first portion includes a plurality of first protrusions projecting upward. The second portion includes a second protrusion projecting upward. The upper surfaces of the second protrusions include a first annular region and a second annular region. The first annular region, together with the upper surfaces of each of the plurality of first protrusions, constitutes a substrate support surface. The second annular region extends radially with respect to the central axis, horizontally connected to the first annular region from its outer edge to the outer edge of the upper surface of the second protrusion. The radial width of the first annular region is 1 mm or more. The radial distance between the central axis and the outer edge of the electrostatic chuck electrode is greater than or equal to the radial distance between the central axis and the outer edge of the first annular region. [Selection Diagram] Figure 3

Inventors

  • 勝野 翔太郎
  • 山口 伸
  • 西 遼太

Assignees

  • 東京エレクトロン株式会社

Dates

Publication Date
20260508
Application Date
20241022

Claims (10)

  1. A dielectric member having a substrate support surface and supporting a substrate placed on the substrate support surface, An electrostatic chuck electrode is disposed within the dielectric member and extends along the substrate support surface, Equipped with, The dielectric member is A first portion including a plurality of first protrusions projecting upward, A second portion having a second protrusion that projects upward, and which extends circumferentially with respect to the central axis of the dielectric member so as to surround the plurality of first protrusions, Includes, The upper surface of the second protrusion is Together with the upper surfaces of each of the plurality of first protrusions, the substrate support surface is formed, and a first annular region extends from the inner edge of the upper surface of the second protrusion to the outer edge of the substrate support surface, A second annular region extends radially with respect to the central axis, horizontally connected to the first annular region from the outer edge of the first annular region to the outer edge of the upper surface of the second protrusion, Includes, The radial width of the first annular region is 1 mm or more. The radial distance between the central axis and the outer edge of the electrostatic chuck electrode is greater than or equal to the radial distance between the central axis and the outer edge of the first annular region. Electrostatic chuck.
  2. The radial width of the second annular region is 0.2 mm or more. The radial distance between the central axis and the outer edge of the electrostatic chuck electrode is greater than the radial distance between the central axis and the outer edge of the first annular region. The electrostatic chuck according to claim 1.
  3. The radial width of the second annular region is greater than 0.2 mm. The radial distance between the central axis and the outer edge of the electrostatic chuck electrode is 0.2 mm or more greater than the radial distance between the central axis and the outer edge of the first annular region. The electrostatic chuck according to claim 2.
  4. A dielectric member having a substrate support surface and supporting a substrate placed on the substrate support surface, An electrostatic chuck electrode is disposed within the dielectric member and extends along the substrate support surface, Equipped with, The dielectric member is A first portion including a plurality of first protrusions projecting upward, A second portion having a second protrusion that projects upward, and which extends circumferentially with respect to the central axis of the dielectric member so as to surround the plurality of first protrusions, Includes, The upper surface of the second protrusion, together with the upper surfaces of each of the plurality of first protrusions, constitutes the substrate support surface and includes an annular region extending from the inner edge of the upper surface of the second protrusion to the outer edge of the upper surface of the second protrusion. The width of the annular region in the radial direction with respect to the central axis is 1 mm or more. The outer edge of the substrate support surface in the annular region supports the edge of the substrate. The radial distance between the central axis and the outer edge of the electrostatic chuck electrode is greater than or equal to the radial distance between the central axis and the inner edge of the upper surface of the second protrusion. Electrostatic chuck.
  5. An electrostatic chuck according to any one of claims 1 to 4, A base for supporting the electrostatic chuck is placed on top of it, Equipped with, Board support.
  6. The base provides a refrigerant flow path. The substrate support according to claim 5.
  7. The refrigerant flow path is located below the substrate support surface. The substrate support according to claim 6.
  8. The substrate support according to claim 5, The substrate support comprises a chamber in which the substrate support is located, A plasma generation unit configured to generate plasma within the chamber, Equipped with, Plasma processing equipment.
  9. Gas supply department, Control unit and Furthermore, The control unit is configured to control the gas supply unit to supply precoat gas into the chamber in order to form a precoat film on the upper surface of the electrostatic chuck before placing the substrate on the substrate support surface. The plasma processing apparatus according to claim 8.
  10. The control unit is configured to control the gas supply unit and the plasma generation unit so as to generate plasma from the processing gas in the chamber in order to perform plasma processing on the substrate after the precoat film has been formed and the substrate has been placed on the substrate support surface. The plasma processing apparatus according to claim 9.

Description

Exemplary embodiments of this disclosure relate to an electrostatic chuck, a substrate support, and a plasma processing apparatus. A plasma processing apparatus is used in plasma processing of a substrate. The plasma processing apparatus includes a chamber, a substrate support, and a plasma generation unit. The substrate support has an electrostatic chuck and a base. The dielectric member has a substrate support surface. The dielectric member supports the substrate placed on the substrate support surface. Patent Document 1 below discloses an electrostatic chuck including a dielectric member that supports the central region of a substrate. Japanese Patent Publication No. 2012-195463 Figure 1 is a diagram illustrating an example of the configuration of a plasma processing system.Figure 2 is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus.Figure 3 is a partially enlarged cross-sectional view of a substrate support according to one exemplary embodiment.Figure 4 is a partially enlarged cross-sectional view of a substrate support according to one exemplary embodiment.Figure 5 is a partially enlarged cross-sectional view of a substrate support according to another exemplary embodiment.Figure 6 is a partially enlarged cross-sectional view of a substrate support according to yet another exemplary embodiment.Figure 7 is a flowchart showing a plasma processing method according to one exemplary embodiment. The following describes various exemplary embodiments in detail with reference to the drawings. Note that the same or corresponding parts in each drawing will be denoted by the same reference numerals. Figure 1 is a diagram illustrating an example configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas outlet is connected to an exhaust system 40 (described later). The substrate support unit 11 is located within the plasma processing space and has a substrate support surface for supporting a substrate. The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR (Electron Cyclotron Resonance) plasma, helicon wave excited plasma (HWP), or surface wave plasma (SWP), etc. Furthermore, various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, may be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz. The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is implemented, for example, by a computer 2a. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions realized by the processing unit 2a1 described herein may be implemented in a circuit or processing circuit, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), a conventional circuit, and/or a combination thereof, programmed to realize the described functions. The processor is considered to be a circuit or processing circuit, including transistors and other circuits. The processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit