JP-2026075720-A - Method for manufacturing perovskite solar cells and perovskite solar cells

Abstract

[Problem] The present invention provides a means for manufacturing a perovskite solar cell having high conversion efficiency and high durability. [Solution] One aspect of the present invention relates to a method for manufacturing a perovskite solar cell, comprising a coating step of coating a carrier transport layer with a precursor solution containing a precursor material for generating perovskite crystals, an additive represented by formula (I), and a solvent, and a heating step of heating the precursor layer obtained in the coating step to form a photoelectric conversion layer containing a perovskite film. Another aspect of the present invention relates to a perovskite solar cell. [Selection Diagram] None

Inventors

• 飯坂 浩文

Assignees

• トヨタ自動車株式会社

Dates

Publication Date

20260511

Application Date

20241023

Claims (6)

1. A method for manufacturing perovskite solar cells, A precursor material that produces perovskite crystals, and formula (I): [In the formula, n is an integer greater than or equal to 6. A coating step involves coating a carrier transport layer with a precursor solution containing an additive represented by and a solvent. Heating step, the precursor layer obtained in the coating step is heat-treated to form a photoelectric conversion layer containing a perovskite film. The method, including the method described above.
2. The method according to claim 1, wherein n is an integer between 6 and 11.
3. The method according to claim 1, wherein n is 7.
4. The method according to claim 1, wherein the precursor substance is a mixture of a halogenated organic amine, an amidinium halide, and a metal halide.
5. The method according to claim 4, wherein the precursor substance is a mixture of methylammonium iodide, formamidinium iodide, cesium iodide, and lead iodide.
6. A perovskite solar cell having at least a photoelectric conversion layer including a perovskite film containing a perovskite crystal, and two carrier transport layers disposed on both sides of the photoelectric conversion layer, The perovskite film contained in the photoelectric conversion layer has an orientation index of 1 or higher in at least the (100), (002), and (220) planes, as determined by X-ray diffraction (XRD) calculated using the Wilson method. The aforementioned perovskite solar cell.

Description

This invention relates to a method for manufacturing a perovskite solar cell and to a perovskite solar cell itself. In recent years, perovskite solar cells have been developed as a technology to achieve carbon neutrality. Perovskite solar cells have a perovskite film containing perovskite crystals as the photoelectric conversion layer. For example, Patent Document 1 describes a method for producing a microparticle perovskite film by coating and drying a solution obtained by dissolving a precursor material for generating perovskite crystals and an ionic liquid in a solvent, followed by an annealing treatment. This document also describes a method for producing a functional device, such as a perovskite solar cell, characterized by using the microparticle perovskite film produced by the above method. Patent No. 6501303 This is a cross-sectional view showing one embodiment of a perovskite solar cell manufactured by a method according to one aspect of the present invention.This graph shows the relationship between the number of carbon atoms in the side-chain alkyl group and the melting point of the additive used to prepare the perovskite film in the example. In the figure, the horizontal axis represents the number of carbon atoms in the side-chain alkyl group, and the vertical axis represents the melting point (K). In the additive represented by formula (I), the side-chain alkyl group is represented as H3C- ( CH2 ) n- . Therefore, the number of carbon atoms in the side-chain alkyl group is n+1.This graph shows the relationship between the number of carbon atoms in the side-chain alkyl group of the additive used to prepare the perovskite film in the examples and the average particle size of the perovskite particles contained in the prepared perovskite film. In the figure, the horizontal axis represents the number of carbon atoms in the side-chain alkyl group, and the vertical axis represents the average particle size (μm) of the perovskite particles.These are scanning electron microscope (SEM) images of the perovskite films prepared in the examples. In the figures, A is an SEM image of a perovskite film prepared using a precursor solution containing an additive with 8 carbon atoms in the side-chain alkyl group (i.e., n = 7), B is an SEM image of a perovskite film prepared using a precursor solution containing an additive with 16 carbon atoms in the side-chain alkyl group (i.e., n = 15), C is an SEM image of a perovskite film prepared using a precursor solution containing an additive with 4 carbon atoms in the side-chain alkyl group (i.e., n = 3), D is an SEM image of a perovskite film prepared using a precursor solution containing an additive with 6 carbon atoms in the side-chain alkyl group (i.e., n = 5), and E is an SEM image of a control perovskite film prepared using a precursor solution without additives.These are SEM images of perovskite films treated with high-temperature testing. In the figure, A is an SEM image of a perovskite film prepared using a precursor solution containing an additive with 8 carbon atoms in the side-chain alkyl group (i.e., n = 7), B is an SEM image of a perovskite film prepared using a precursor solution containing an additive with 16 carbon atoms in the side-chain alkyl group (i.e., n = 15), C is an SEM image of a perovskite film prepared using a precursor solution containing an additive with 4 carbon atoms in the side-chain alkyl group (i.e., n = 3), and D is an SEM image of a perovskite film prepared using a precursor solution containing an additive with 6 carbon atoms in the side-chain alkyl group (i.e., n = 5).This graph shows the orientation index of each plane index in X-ray diffraction (XRD) calculated using the Wilson method. In the figure, the horizontal axis represents the plane index, and the vertical axis represents the orientation index of each plane index.This graph shows the relationship between the number of carbon atoms in the side-chain alkyl group of the additive used to prepare the perovskite film in the examples, and the XRD area ratio (PbI2/PVK) of the ( 001 ) plane peak of lead iodide ( PbI2 ) and the (110) plane peak of the α-phase of the perovskite compound (PVK) contained in the prepared perovskite film. In the figure, the horizontal axis represents the number of carbon atoms in the side-chain alkyl group, and the vertical axis represents the XRD area ratio ( PbI2 /PVK).This graph shows the relationship between the temperature of the heat treatment test for perovskite films prepared in the examples without additives (control) or with an additive having 8 carbon atoms in the side-chain alkyl group (i.e., n = 7), and the XRD area ratio ( PbI₂ /PVK) of the ( 001 ) plane peak of PbI₂ and the (110) plane peak of the α-phase of PVK contained in the treated perovskite film. In the figure, the horizontal axis represents the temperature of the heat treatment test (°C), and the vertical axis represents the XRD area ratio ( PbI₂ /PVK). The following describes prefer