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JP-2026075889-A - Semiconductor equipment

JP2026075889AJP 2026075889 AJP2026075889 AJP 2026075889AJP-2026075889-A

Abstract

[Problem] To provide a heat dissipation sheet and a semiconductor device that improve heat dissipation efficiency by forming a heat dissipation sheet along the curvature of the base plate and increasing the contact area with the base plate. [Solution] The semiconductor device 1 comprises an insulating substrate 2, a semiconductor element 7 bonded to one side of the insulating substrate, a base plate 3 having one side bonded to the other side of the insulating substrate and having a curve on the other side, and a heat dissipation sheet 16 in contact with the other side of the base plate. The heat dissipation sheet is made of solid material, and one side of the heat dissipation sheet has a shape that conforms to the curved shape of the base plate. [Selection Diagram] Figure 1

Inventors

  • 小野又 樹

Assignees

  • 三菱電機株式会社

Dates

Publication Date
20260511
Application Date
20241023

Claims (13)

  1. Insulating substrate and A semiconductor element bonded to one side of the insulating substrate, One side of the insulating substrate is joined to the other side of a base plate having a curved shape on the other side, The base plate comprises a heat dissipation sheet in contact with the other side of the base plate, The heat dissipation sheet is solid, and one side of the heat dissipation sheet has a shape that conforms to the curvature of the base plate.
  2. The semiconductor device according to claim 1, wherein the heat dissipation sheet has no adhesive properties on one side that is in contact with the base plate.
  3. The semiconductor device according to claim 1, wherein the heat dissipation sheet has adhesive properties on one side that is not in contact with the base plate and is bonded to the base plate side.
  4. The semiconductor device according to claim 1, wherein the heat dissipation sheet has a hardness measured by a hardness tester type E in the range of 30 to 70 degrees.
  5. The heat dissipation sheet has mounting holes in the portion not in contact with the base plate, and is fixed to the base plate side using the mounting holes, as described in any one of claims 1 to 4.
  6. The semiconductor device according to any one of claims 1 to 4, wherein the heat dissipation sheet has a flat surface on the other side.
  7. The heat dissipation sheet comprises graphite as a component, according to any one of claims 1 to 4.
  8. The heat dissipation sheet has a thickness that varies according to the curvature of the base plate, as described in any one of claims 1 to 4.
  9. The heat dissipation sheet is composed of two sheets of different thicknesses, as described in any one of claims 1 to 4.
  10. The heat dissipation sheet has a plurality of slits, as described in any one of claims 1 to 4.
  11. The semiconductor device according to any one of claims 1 to 4, wherein the aforementioned curvature is a convex curvature in which the protrusion height increases as it approaches the center.
  12. The aforementioned curvature is a curvature in which the protruding height differs at each position in the first direction. A semiconductor device according to any one of claims 1 to 4, wherein the plurality of slits are arranged in the first direction.
  13. The semiconductor device according to claim 10, wherein the width of the slits increases as the protruding height of the curved portion facing each slit increases.

Description

This disclosure relates to semiconductor devices. For example, Patent Document 1 describes an apparatus characterized by having a bonding layer containing a thermocompression adhesive between at least one of the following: between the semiconductor module and the heat dissipation sheet, and between the heat dissipation sheet and a cooling device provided on the side of the heat dissipation sheet opposite the semiconductor module. Japanese Patent Publication No. 2018-133527 This is a cross-sectional view of the semiconductor device according to Embodiment 1.This is a cross-sectional view of the semiconductor device according to Embodiment 1.This is a bottom view of the heat dissipation sheet in a semiconductor device according to a modified example of Embodiment 1.This is a cross-sectional view of the semiconductor device according to Embodiment 2.This is a bottom view of the heat dissipation sheet in the semiconductor device according to Embodiment 2. 1. Embodiment 1 A semiconductor device 1 according to Embodiment 1 will be described with reference to the drawings. Figure 1 is a cross-sectional view of the semiconductor device 1 according to Embodiment 1. Figure 2 is a cross-sectional view of the semiconductor device 1 according to Embodiment 1. Figure 3 is a bottom view of the heat dissipation sheet 16 in a modified semiconductor device 1 according to Embodiment 1. 1-1. Configuration of Semiconductor Device 1 The semiconductor device 1 comprises an insulating substrate 2, a semiconductor element 7 bonded to one side of the insulating substrate 2, a base plate 3 having one side bonded to the other side of the insulating substrate 2 and having a curve on the other side, and a heat dissipation sheet 16 in contact with the other side of the base plate 3. The heat dissipation sheet 16 is made of solid material, and one side of the heat dissipation sheet 16 has a shape that conforms to the curved shape of the base plate 3. In this disclosure, the direction perpendicular to the direction in which the base plate 3 and the heat dissipation sheet 16 are joined is defined as the first direction. <Insulating substrate 2> In this embodiment, the insulating substrate 2 has a semiconductor element 7 bonded to one side and a base plate 3 bonded to the other side, and is made of ceramic, resin, or the like. A bonding material 4 such as solder is used to bond the insulating substrate 2, the base plate 3, and the semiconductor element 7. A circuit pattern is created on the insulating substrate 2. For example, the circuit pattern is created by etching copper or the like. For example, an insulating substrate consists of a circuit board and an insulating substrate. The insulating substrate is constructed by stacking circuit boards in the order of insulating substrate, with the insulating substrate sandwiched between the two circuit boards. The circuit boards are primarily made of copper and form the circuit pattern. The insulating substrate is made of an insulating ceramic material such as alumina. By sandwiching an insulator between the two types of circuit boards, the electrical circuits formed by the two types of circuit boards do not interfere with each other, preventing short circuits and electrical problems. Bonding material is provided on both sides of the insulating substrate (one side of the circuit board on one side, and the other side of the circuit board on the other side). Solder is primarily used as the bonding material, but a sintered material using a metal paste such as silver paste may also be used. A semiconductor element or capacitor chip is mounted on one side of the insulating substrate where the bonding material is provided, and a heat sink is mounted on the other side where the bonding material is provided. Multiple insulating substrates are connected to each other via bonding wires. The ends of the bonding wires are attached to one side of each insulating substrate so as to connect to the circuit board. <Semiconductor element 7> In this embodiment, the semiconductor element 7 is bonded to one side of the circuit pattern created on the insulating substrate 2. The semiconductor element 7 can be an IGBT (Insulated Gate Bipolar Transistor) or a diode. The semiconductor element 7 is connected to electrode terminals attached to a case using wires. For example, copper or aluminum can be used for the wires. For example, a semiconductor element is bonded to one side of an insulating substrate. The other side of the semiconductor element is attached to the aforementioned insulating substrate via an adhesive. One end of a bonding wire is joined to one side of the semiconductor element. The other end of the bonding wire is joined to an external terminal. The semiconductor element is electrically connected to the outside world by the bonding wire. This example uses an IGBT (Integrated Gauge Tester). IGBTs are used for high-voltage, high-current switching and are utilized in motor control and inverter circuits, among