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JP-2026075970-A - MEMS and method for manufacturing the same

JP2026075970AJP 2026075970 AJP2026075970 AJP 2026075970AJP-2026075970-A

Abstract

[Problem] To provide a MEMS and a method for manufacturing the same that can reduce manufacturing costs. [Solution] By dry etching, the piezoelectric film 20 and the first conductive film 21 are removed, leaving the outer region S1 that encloses the two inner regions S21 and S22. At the same time, the second conductive film 22 (one of the second conductive films 221) and the piezoelectric film 20 are removed in the first pad region S01 that is enclosed in one of the two inner regions S21 and S22, the inner region S21. [Selection Diagram] Figure 2C

Inventors

  • 竹原 優志

Assignees

  • スタンレー電気株式会社

Dates

Publication Date
20260511
Application Date
20241023

Claims (6)

  1. circuit board and In the outer region, a first conductive film formed on the surface of the substrate, A piezoelectric film formed on the surface of the first conductive film, excluding the first pad region of the outer region, A MEMS comprising a second conductive film formed on the surface of the piezoelectric film in an inner region that is enclosed within the outer region and encloses the first pad region, excluding the first pad region, and in the other inner region that is spaced apart from the first inner region.
  2. In the MEMS described in claim 1, A MEMS in which the first conductive film and the second conductive film are formed from the same material and have the same thickness.
  3. In the MEMS according to claim 1 or 2, A MEMS comprising a protective film that encloses the first conductive film, the piezoelectric film, and the second conductive film, excluding the first pad region and the second pad region which is enclosed within the other inner region.
  4. A first film deposition step involves sequentially depositing a first conductive film, a piezoelectric film, and a second conductive film onto a substrate, After the first film formation step, a first etching step is performed in which the second conductive film is removed by dry etching, leaving two inner regions that are separated from each other. A method for manufacturing a MEMS, comprising: a first etching step followed by a second etching step in which the piezoelectric film and the first conductive film are removed by dry etching, leaving an outer region encompassing the two inner regions, and the second conductive film and the piezoelectric film are removed in the first pad region encompassed by one of the two inner regions.
  5. In the method for manufacturing MEMS according to claim 4, A method for manufacturing MEMS, comprising forming a first conductive film and a second conductive film of the same thickness using the same material in the first film formation step.
  6. In the method for manufacturing MEMS according to claim 4 or 5, After the second etching step, a second film formation step is performed to form a protective film that completely encloses the first conductive film, the piezoelectric film, and the second conductive film. A method for manufacturing MEMS, comprising: a second film formation step followed by an etching step to remove the protective film in the first pad region and to remove the protective film in the second pad region which is enclosed within the other inner region of the two inner regions.

Description

This invention relates to MEMS and a method for producing the same. Microelectromechanical Systems (MEMS), such as optical deflectors, are known devices that utilize piezoelectric films. MEMS have a structure in which a thermal oxide film ( SiO2 film), a lower electrode, a piezoelectric film (e.g., a PZT film), and an upper electrode are sequentially laminated on a substrate (e.g., an SOI substrate). The overlapping portion of the lower electrode, piezoelectric film, and upper electrode functions as an actuator. Furthermore, the piezoelectric film and upper electrode are removed in the PAD portion so that the lower electrode is exposed. As a method of manufacturing the device, a method has been proposed in which the lower electrode, piezoelectric film, and upper electrode are sequentially deposited on the substrate and then processed into a desired shape by etching or the like (see, for example, Patent Documents 1 and 2). Patent Publication No. 4926596Patent Publication No. 7297538 A diagram illustrating the configuration of a MEMS as one embodiment of the present invention.An explanatory diagram relating to the manufacturing process 1 of a MEMS as one embodiment of the present invention.An explanatory diagram relating to the manufacturing process 2 of a MEMS as one embodiment of the present invention.An explanatory diagram of the manufacturing process 3 of a MEMS as one embodiment of the present invention.An explanatory diagram of the manufacturing process 4 of a MEMS as one embodiment of the present invention.An explanatory diagram of the manufacturing process 5 of a MEMS as one embodiment of the present invention.An explanatory diagram of the manufacturing process 6 of a MEMS as one embodiment of the present invention.An explanatory diagram of the manufacturing process 7 of a MEMS as one embodiment of the present invention.An explanatory diagram relating to the manufacturing process 2 of MEMS as a first modified example of the present invention.An explanatory diagram relating to the manufacturing process 3 of MEMS as a first modified example of the present invention.An explanatory diagram relating to the manufacturing process 4 of MEMS as a first modified example of the present invention.An explanatory diagram relating to the manufacturing process 2 of MEMS as a second modification of the present invention.An explanatory diagram relating to the manufacturing process 3 of MEMS as a second modification of the present invention.An explanatory diagram relating to the manufacturing process 3-2 of MEMS as a second modification of the present invention.An explanatory diagram relating to the manufacturing process 3 of MEMS as a second modification of the present invention.Diagram illustrating the configuration of an optical deflector as a MEMS (Mechanical Energy Element System).Cross-sectional view of the MEMS along line VII-VII in Figure 6.Diagram illustrating the configuration of a sound-producing device as a MEMS (Memory Energy Device).Cross-sectional view of the MEMS along the IX-IX line in Figure 8.An explanatory diagram of the manufacturing process of MEMS using the conventional method 1.An explanatory diagram of the manufacturing process 1 of MEMS using the conventional method 2.An explanatory diagram of the manufacturing process 2 of MEMS using the conventional method 2. (composition) Figure 1 shows a MEMS as one embodiment of the present invention, which is a cantilever actuator comprising a substrate 1 and a piezoelectric element 2. The upper part of Figure 1 shows a plan view of the MEMS, and the lower part of Figure 1 shows a schematic cross-sectional view of the MEMS. The MEMS may have different configurations, such as an optical deflector (MEMS mirror), but the structure of the main parts is substantially the same as in this embodiment. As shown in the lower part of Figure 1, the substrate 1 is made of an SOI wafer and has a five-layer structure in which the first oxide film 12, active layer 10, second oxide film 14, support layer 16, and third oxide film 18 are stacked in that order from top to bottom. The active layer 10 is composed of a silicon single crystal of an SOI wafer. The first oxide film 42 is, for example, an SiO2 film and is formed on one main surface (upper surface) of the active layer 10. The second oxide film 14 is, for example, a BOX film and is formed on the other main surface (lower surface) of the active layer 10. The support layer 16 is a handle silicon layer and is formed on the surface (lower surface) of the second oxide film 14. The third oxide film 18 is, for example, an SiO2 film and is formed on the surface (lower surface) of the support layer 16. As shown in the lower part of Figure 1, the support layer 16 and the third oxide film 18 are removed in a portion of the substrate 1 to ensure flexibility in that portion. As shown in the lower part of Figure 1, the piezoelectric element 2 comprises an active layer 10, a piezoelectric film 20, a first conductive film 21, a seco