JP-2026076042-A - PCB mounting stand for PCB processing equipment
Abstract
[Problem] To provide a substrate mounting stand that can suppress heat loss to the outside for heating the substrate, and can heat the substrate to a high temperature. [Solution] The substrate mounting table (10) comprises a substrate mounting section (11) made of a predetermined metal material or a material containing the metal material, and a cylindrical support member (13) having a smaller diameter than the substrate mounting section (11) that supports the substrate mounting section (11) from below. The support member (13) is located on the substrate mounting section (11) side and consists of a first part (131) made of a first material which is a metal material, and a second part (132) made of a second material which is a metal material with lower thermal conductivity than the first material, and connected to the first part (131) by friction stir welding (FSW). [Selection Diagram] Figure 1
Inventors
- 谷野 雄祐
Assignees
- サムコ株式会社
Dates
- Publication Date
- 20260511
- Application Date
- 20241023
Claims (4)
- A substrate mounting section made of a predetermined metal material or a material containing said metal material, The substrate mounting portion is supported from below by a cylindrical support member having a smaller diameter than the substrate mounting portion, The aforementioned support member is Located on the substrate mounting side, the first part is made of a first material which is a metallic material, A substrate mounting base for a substrate processing apparatus, comprising a second material which is a metallic material having a lower thermal conductivity than the first material, and a second part which is connected to the first part by friction stir bonding.
- The substrate mounting platform for a substrate processing apparatus according to claim 1, wherein the first material is pure aluminum or a composite material containing an aluminum alloy, and the second material is pure nickel or a nickel alloy.
- The substrate mounting stand for a substrate processing apparatus according to claim 1, wherein the substrate mounting portion and the first portion are joined by welding.
- A method for manufacturing a cylindrical body that is a support member for supporting a substrate mounting portion in a substrate mounting table for a substrate processing apparatus, wherein two cylindrical members made of different metal materials are joined together, A step of joining a first rod-shaped member made of a first material which is a metallic material and a second rod-shaped member made of a second material which is a metallic material having a lower thermal conductivity than the first material by friction stir welding, A method for manufacturing a cylindrical body, comprising the steps of: hollowing out the central part of the first rod-shaped member and the second rod-shaped member joined by the above step in the axial direction by machining.
Description
This invention relates to a substrate mounting platform used in apparatuses that perform some kind of processing on substrates, such as plasma processing apparatuses, atomic layer deposition (ALD) processing apparatuses, and heat processing apparatuses. In semiconductor substrate manufacturing processes using plasma processing equipment, plasma processing is sometimes performed while heating the substrate to temperatures exceeding 400°C (e.g., 450°C). A typical example is plasma CVD processing. When performing such processing, a substrate mounting stage with a built-in heater is used. Patent Document 1 discloses a plate-shaped substrate mounting platform made of aluminum alloy with a built-in resistance heating element (heater) in a CVD (chemical vapor deposition) apparatus. This substrate mounting platform is supported from below by a cylindrical support made of the same aluminum alloy and is positioned approximately in the center of the reaction chamber. The substrate mounting platform and the support are joined by TIG (Tungsten Inert Gas) welding. When processing a substrate with this apparatus using CVD, the substrate is placed on the upper surface of the substrate mounting platform, and the substrate is heated through the substrate mounting platform by passing an electric current through the resistance heating element. However, this apparatus has the drawback that, because the support is made of the same aluminum alloy material as the sample mounting platform, some of the heat generated by the heater escapes to the outside through the support. Patent Document 2 describes a semiconductor manufacturing apparatus comprising a plate-shaped substrate mounting table with a built-in heater and a cylindrical support fixed to the underside of the substrate mounting table. The substrate mounting table is made of a metal such as copper or aluminum, while the support is made of a metal with lower thermal conductivity than the substrate mounting table material, such as nickel or a nickel alloy. By using these materials for the substrate mounting table and the support, it is possible to suppress the heat generated by the heater from escaping to the outside through the support. Utility Model Registration No. 3122477 (Publication)Japanese Patent Publication No. 2009-065033Japanese Patent Publication No. 2001-225179Japanese Patent Publication No. 2017-220327 A longitudinal cross-sectional view showing one embodiment of a substrate mounting platform for a substrate processing apparatus according to the present invention.A photograph of the substrate mounting base of this embodiment, focusing on the area near the joint between the first and second parts of the support member.This figure shows the manufacturing process for a cylindrical member, which is a component of the substrate mounting stand in this embodiment.This figure shows the substrate mounting platform of this embodiment fixed to the bottom plate of the chamber of the plasma processing apparatus. An embodiment of the substrate mounting stand for a substrate processing apparatus according to the present invention (hereinafter abbreviated as "substrate mounting stand") will be described using Figures 1 to 4. Figure 1 shows the configuration of the substrate mounting stand 10 of this embodiment. Figure 2 shows a photograph of the fabricated substrate mounting stand 10. The substrate mounting stand 10 of this embodiment includes a substrate mounting section 11, a heater 12, and a support member 13. The substrate mounting section 11 is made of an aluminum (Al) plate, a composite material plate made by mixing aluminum with alumina ( Al₂O₃ ), or a composite material plate (aluminum composite material) made by impregnating an alumina support with aluminum as described in Patent Document 4. In the case of the aluminum composite material, the outer surface of the support is made of aluminum without alumina. Therefore, the lower surface of the substrate mounting section is also made of aluminum. This configuration allows for greater strength at high temperatures than aluminum alone, while maintaining the temperature uniformity obtained due to the high thermal conductivity of aluminum, and suppressing deformation. Furthermore, this configuration increases the plasma resistance of the substrate mounting section, so the substrate mounting stand of the present invention can be used in a plasma processing apparatus. In addition, this configuration improves the throughput when cleaning the substrate mounting stand compared to when the substrate mounting stand is made of SUS (stainless steel). Generally, when the substrate mounting table is made of SUS (stainless steel), the temperature of the substrate mounting table must be lower than that during film deposition to prevent cleaning gases such as NF3 from corroding the SUS. This reduces throughput due to the time required for heating and cooling. However, since the substrate mounting section 11 made of aluminum or aluminum com