JP-2026076186-A - Molybdenum (VI) precursor for molybdenum film deposition

Abstract

[Problem] To provide a molybdenum precursor that does not contain halogen groups or carbonyl groups and reacts to form molybdenum metal and molybdenum-based films. [Solution] A metal coordination complex containing molybdenum (VI) and substantially free of halogens and carbonyls is provided. [Selection Diagram] Figure 1

Inventors

• レオンチーニ， アンドレア
• メールマン， ポール
• ドルデヴィッチ， ネマニャ
• フィン， ハン ビン
• ヨン， ドリーン ウェイ イン
• サリー， マーク
• ブイヤン， バスカー ジョティ
• リウ， フェン キュー．

Assignees

• アプライド マテリアルズ インコーポレイテッド
• ナショナル ユニヴァーシティー オブ シンガポール

Dates

Publication Date

20260511

Application Date

20251226

Priority Date

20210112

Claims (20)

1. A metal-coordinate complex containing molybdenum (VI) and substantially free of halogens and carbonyls.
2. Formula (I) or Formula (II) The metal coordination complex according to claim 1, having the structure [wherein E is independently selected from an oxo group, an imide group, and a sulfide group; X is independently selected from O, SiR2 , and CR2 ; L is a ligand that coordinates to nitrogen or phosphorus; and R is independently an unsubstituted or substituted C1 - C10 alkyl group].
3. The metal coordination complex according to claim 2, wherein E independently comprises O, N-tBu, or S.
4. The above structure is of formula (I), and L is the following A metal coordination complex according to claim 2, selected from the group consisting of the following.
5. The above structure is of formula (II), However, the next A metal coordination complex according to claim 2, selected from the group consisting of the following.
6. R is Me-, Et-, iPr-, tBu-, and A metal coordination complex according to claim 2, independently selected from substituents.
7. Exposing the substrate to a molybdenum (VI) precursor, A method for depositing a film, comprising exposing the substrate to a reactant to form a molybdenum film on the substrate.
8. The molybdenum (VI) precursor is of formula (I) or formula (II) The method according to claim 7, having the structure [wherein E is independently selected from an oxo group, an imide group, and a sulfide group; X is independently selected from O, SiR2 , and CR2 ; L is a ligand that coordinates to nitrogen and phosphorus; and R is independently an unsubstituted or substituted C1 - C10 alkyl group].
9. The method according to claim 8, wherein E independently comprises O, N-tBu, or S.
10. The above structure is of formula (I), and L is as follows: The method according to claim 8, selected from the group consisting of the following.
11. The above structure is of formula (II), However, the next The method according to claim 8, selected from the group consisting of the following.
12. The method according to claim 7, wherein the reactant comprises one or more of an oxidizing agent and a reducing agent.
13. The method according to claim 7, wherein the molybdenum film comprises one or more of the following: a molybdenum metal (elemental Mo) film, a molybdenum oxide film, a molybdenum carbide film, a molybdenum silicide film, and a molybdenum nitride film.
14. The method according to claim 7, wherein the substrate is sequentially exposed to the molybdenum (VI) precursor and the reactant.
15. The method according to claim 7, wherein the substrate is simultaneously exposed to the molybdenum (VI) precursor and the reactant.
16. The method according to claim 7, further comprising purging the substrate for a molybdenum (VI) precursor before exposing the substrate to the reactant.
17. The method according to claim 16, wherein purging includes one or more of applying reduced pressure or flowing a purge gas over the substrate.
18. The method according to claim 7, further comprising repeating the above method to provide a molybdenum film having a thickness in the range of approximately 0.3 nm to approximately 100 nm.
19. A method for depositing a film, comprising forming a molybdenum-containing film in a processing cycle including sequential exposure of a substrate to a molybdenum (VI) precursor, a purge gas, reactants, and the purge gas.
20. The molybdenum (VI) precursor is of formula (I) or formula (II) The method according to claim 19, having the structure [wherein E is independently selected from an oxo group, an imide group, and a sulfide group; X is independently selected from O, SiR2 , and CR2 ; L is a ligand that coordinates to nitrogen or phosphorus; and R is independently an unsubstituted or substituted C1 - C10 alkyl group].

Description

[0001] Embodiments of this disclosure relate to a molybdenum precursor and a method for depositing a molybdenum-containing film. More specifically, embodiments of this disclosure relate to a molybdenum (VI) precursor containing a group XV donor and a method for using the same. [0002] The semiconductor processing industry continues to strive for higher production yields while increasing the uniformity of layers deposited on substrates with larger surface areas. These same elements, combined with new materials, also improve the density of circuits per unit area of the substrate. As circuit density increases, the need for uniformity and processing control regarding layer thickness becomes greater. As a result, various techniques have been developed to deposit layers on substrates in a cost-effective manner while maintaining control over layer characteristics. [0003] Chemical vapor deposition (CVD) is one of the most common deposition processes used to deposit layers on a substrate. CVD is a flux-dependent deposition technique that requires precise control of the substrate temperature and the precursor introduced into the processing chamber to produce the desired layer of uniform thickness. These requirements become more critical as the substrate size increases, necessitating more complex chamber designs and gas flow techniques to maintain proper uniformity. [0004] One type of CVD that exhibits excellent process coverage is periodic deposition or atomic layer deposition. Periodic deposition is based on atomic layer epitaxy (ALE) and uses chemiadsorption techniques to supply precursor molecules onto the substrate surface in sequential cycles. Each cycle exposes the substrate surface to a first precursor, a purge gas, a second precursor, and another purge gas. The first and second precursors react to form a product compound as a film on the substrate surface. The cycle is repeated to form a layer of the desired thickness. [0005] The increasing complexity of advanced microelectronic devices places demanding requirements on currently used deposition technologies. Unfortunately, the number of viable chemical precursors available that possess the essential properties of robust thermal stability, high reactivity, and vapor pressure suitable for film growth is limited. Furthermore, precursors that often meet these requirements still have poor long-term stability, resulting in thin films containing high concentrations of contaminants such as oxygen, nitrogen, and halides, which are often detrimental to the target film application. [0006] Molybdenum and molybdenum-based films possess attractive material and conductivity properties. These films have been proposed and tested for applications ranging from the front-end to the back-end of semiconductor and microelectronic devices. Processing of molybdenum precursors often involves the use of halogen and carbonyl-based substituents. These ligands provide sufficient stability at the expense of reduced reactivity and increased processing temperature. Other molybdenum precursors contain amide ligands, which can lead to nitride impurities. Therefore, there is a need in the art for molybdenum precursors that do not contain halogen and carbonyl groups and react to form molybdenum metal and molybdenum-based films. [0007] One or more embodiments of the present disclosure relate to metal coordination complexes. In one or more embodiments, the metal coordination complex comprises molybdenum (VI), and the metal coordination complex is substantially free of halogens and carbonyls. [0008] One or more embodiments of the present disclosure relate to a method for depositing a film. In one or more embodiments, the method for depositing a film includes exposing a substrate to a molybdenum (VI) precursor and exposing the substrate to a reactant to form a molybdenum-containing film on the substrate. [0009] Further embodiments of the present disclosure relate to a method for depositing a film. In one or more embodiments, the method for depositing a film includes forming a molybdenum-containing film in a processing cycle comprising sequential exposure of a substrate to a molybdenum (VI) precursor, a purge gas, reactants, and the purge gas. [0010] To enable a more detailed understanding of the above-mentioned features of this disclosure, a more detailed description of this disclosure, which has been briefly summarized above, can be given by reference to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings show only typical embodiments of this disclosure and should therefore not be considered to limit its scope. [0011] A processing flow diagram of a method according to one or more embodiments of the present disclosure is shown. [0012] Before describing some exemplary embodiments of the present invention, it should be understood that the present invention is not limited to the details of the configuration or processing steps des