JP-2026076198-A - Semiconductor equipment

Abstract

[Problem] To provide a semiconductor device that has good productivity, low power consumption, good reliability, and includes a unipolar logic circuit. [Solution] A semiconductor device 100 that prevents a decrease in the output voltage of a logic circuit by boosting the gate voltage using a capacitive element 117, wherein the drain and gate of transistor 111 are connected to wiring 121 and the source is connected to node 131; the drain of transistor 112 is connected to node 131, the source is connected to wiring 122 and the gate is connected to node 132; the drain of transistor 113 is connected to wiring 123, the source is connected to node 133 and the gate is connected to node 131; the drain of transistor 114 is connected to node 133, the source is connected to wiring 124 and the gate is connected to node 132; one electrode of the capacitive element is connected to node 131 and the other electrode is connected to node 133. It is preferable to use an OS transistor for the transistor. [Selection Diagram] Figure 1

Inventors

• 松嵜 隆徳
• 大貫 達也

Assignees

• 株式会社半導体エネルギー研究所

Dates

Publication Date

20260511

Application Date

20260112

Priority Date

20150821

Claims (1)

1. It has first to fourth transistors and capacitive elements, Each of the first to fourth transistors has a first gate and a second gate, The first gate of the first transistor is electrically connected to the first wiring, The second gate of the first transistor is electrically connected to the first wiring, Either the source or the drain of the first transistor is electrically connected to the first wiring, The source or drain of the first transistor is electrically connected to the source or drain of the second transistor. The source or drain of the second transistor, the other of which is electrically connected to the second wiring, The first gate of the second transistor is electrically connected to the second gate of the second transistor. Either the source or drain of the third transistor is electrically connected to the first wiring. The first gate of the third transistor is electrically connected to the other of the source or drain of the first transistor. The second gate of the third transistor is electrically connected to the other of the source or drain of the third transistor. One of the source or drain of the fourth transistor is electrically connected to the other of the source or drain of the third transistor. The source or drain of the fourth transistor, the other of which is electrically connected to the second wiring, The first gate of the fourth transistor is electrically connected to the second gate of the fourth transistor. The first gate of the fourth transistor is electrically connected to the first gate of the second transistor. One electrode of the capacitive element is electrically connected to the first gate of the third transistor. The other electrode of the capacitive element is electrically connected to the other source or drain of the third transistor in a semiconductor device.

Description

One aspect of the inventions disclosed herein relates to a product, a method, or a method of manufacture. Alternatively, one aspect of the inventions disclosed herein relates to a process, a machine, a manufacture, or a composition of matter. In particular, one aspect of the inventions disclosed herein relates to semiconductor devices and electronic devices having semiconductor devices. In this specification, the term "semiconductor device" refers to all devices that can function by utilizing semiconductor properties. This includes display devices (liquid crystal displays, light-emitting displays, etc.), lighting devices, electro-optical devices, Energy storage devices, memory devices, semiconductor circuits, imaging devices, and electronic devices may contain semiconductor devices. In recent years, oxide semiconductors (OS) have been used in semiconductor layers where channels are formed. Transistors using an conductor (hereinafter also referred to as "OS transistors") are attracting attention. Oxide semiconductors can be deposited using methods such as sputtering, for example, It can be used in the semiconductor layer of transistors that make up large display devices. Furthermore, OS transistors can be produced by modifying and utilizing some of the production equipment for transistors that use amorphous silicon in the semiconductor layer where the channel is formed, which also has the advantage of reducing capital investment. Furthermore, OS transistors are known to have extremely low leakage current in the non-conductive state. For example, low-power CPUs that utilize the extremely low leakage current characteristic of OS transistors have been disclosed (see Patent Document 1). Japanese Patent Publication No. 2012-257187 A circuit diagram illustrating a semiconductor device.A timing chart illustrating the operation of a semiconductor device.A circuit diagram illustrating the operation of a semiconductor device.A circuit diagram illustrating the operation of a semiconductor device.A circuit diagram illustrating a semiconductor device.A timing chart illustrating the operation of a semiconductor device.A circuit diagram illustrating the operation of a semiconductor device.A circuit diagram illustrating the operation of a semiconductor device.A circuit diagram illustrating a semiconductor device.A diagram illustrating an example of a transistor.A diagram illustrating an example of a transistor.A diagram illustrating an example of a transistor.A diagram illustrating an example of a transistor.A diagram illustrating an example of a transistor.A diagram illustrating an example of a transistor.A diagram illustrating an example of a transistor.A diagram illustrating an example of a transistor.A diagram illustrating an example of a transistor.A diagram illustrating an example of a transistor.A diagram illustrating the energy band structure.A flowchart and perspective diagram illustrating an example of the manufacturing process for electronic components.A diagram illustrating an example of an electronic device.A diagram illustrating an example of an electronic device. Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention is not to be interpreted as being limited to the contents of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are used in common across different drawings for the same parts or parts having similar functions. The explanation of that repetition may be omitted in some cases. Furthermore, the position, size, and scope of each component shown in the drawings may not represent the actual position, size, and scope in order to facilitate understanding of the invention. Therefore, the disclosed invention is not necessarily limited to the position, size, and scope disclosed in the drawings. Furthermore, in order to facilitate understanding of the invention, some components may be omitted from the drawings. Also, some hidden lines may be omitted. In this specification, ordinal numbers such as "First,""Second," etc., are used to avoid confusion of constituent elements and do not indicate any order or ranking, such as process order or layering order. Furthermore, even if an ordinal number is not used for a term in this specification, it may be used in the claims to avoid confusion of its constituent elements. Also, even if an ordinal number is used for a term in this specification, a different ordinal number may be used in the claims. Furthermore, even if an ordinal number is used for a term in this specification, the ordinal number may be omitted in the claims. Furthermore, in this specification, the terms "electrode" and "wiring"