JP-2026076289-A - Method of using irreversible circuit elements

Abstract

[Problem] To use non-reversible circuit elements in the 3GHz to 6GHz band. [Solution] A method for using an irreversible circuit element comprising a ferrimagnetic material having a main surface, a plurality of central conductors arranged on the main surface of the ferrimagnetic material in an insulated state from each other, and a laminated magnet in which a ferrite magnet containing Sr and a rare earth magnet containing Sm are stacked, wherein the laminated magnet is arranged opposite the plurality of central conductors, A method for using the non-reversible circuit element, wherein the frequency characteristics of the insertion loss in the non-reversible circuit element are such that, in a temperature range of -40°C to 125°C, the resonant frequency of the main band and the attenuation pole closest to the resonant frequency are separated by 200 MHz or more. [Selection Diagram] Figure 1

Inventors

• 野津 稔
• 倉元 建二
• 寺脇 武文
• 榎木 雅人

Assignees

• 株式会社プロテリアル

Dates

Publication Date

20260511

Application Date

20260206

Priority Date

20210128

Claims (5)

1. A ferrimagnetic material having a main surface, A plurality of central conductors are arranged on the main surface of the ferrimagnetic material in an insulated manner from one another, A laminated magnet comprising a ferrite magnet containing Sr and a rare earth magnet containing Sm, wherein the laminated magnet is arranged opposite to the plurality of central conductors, A method for using a non-reversible circuit element, comprising: In the aforementioned irreversible circuit element, the frequency characteristics of the insertion loss are such that, in a temperature range of -40°C to 125°C, the resonant frequency of the main band and the attenuation pole closest to the resonant frequency are separated by 200 MHz or more. Method of using irreversible circuit elements.
2. The method for using the non-reversible circuit element according to claim 1, wherein the combined temperature coefficient of the residual magnetic flux density of the stacked magnet is -0.14%/°C or higher and -0.06%/°C or lower, and the slope is 1/2 or less compared to the temperature coefficient of the saturation magnetic flux density of the ferrimagnetic material.
3. The temperature coefficient of the saturation magnetic flux density of the ferrimagnetic material is -0.45%/°C or higher and -0.25%/°C or lower. The saturation magnetic flux density of the ferrimagnetic material is 40 mT or more and 80 mT or less. A method for using the irreversible circuit element according to claim 1.
4. The combined temperature coefficient of the residual magnetic flux density of the stacked magnet is -0.12%/°C or higher and -0.08%/°C or lower. A method for using the irreversible circuit element according to claim 1.
5. The ferrimagnetic material has a ferromagnetic resonance half-width ΔH < 2500 A/m. A method for using the irreversible circuit element according to claim 1.

Description

This application relates to a non-reversible circuit element. Non-reversible circuit elements include isolators and circulators, and are used in the transmission and reception circuits of devices such as mobile phones and their base stations. Non-reversible circuit elements are used to prevent amplifier damage and to obtain stable output power with high linearity. They are designed to have low insertion loss in the signal transmission direction and high transmission loss in the reverse direction. For example, Patent Document 1 discloses a non-reversible circuit element that can be miniaturized. Japanese Patent Publication No. 2001-267810 Figure 1 is an exploded perspective view showing one form of the irreversible circuit element of this embodiment.Figure 2 shows the magnetic field strength applied to the ferrimagnetic material of a multilayer magnet in the temperature range of 5°C to 125°C.Figure 3A shows the frequency characteristics of the VSWR and insertion loss of the non-reversible circuit element of Example 1.Figure 3B shows the frequency characteristics of the attenuation of the non-reversible circuit element in Example 1.Figure 4A shows the frequency characteristics of the VSWR and insertion loss of the non-reversible circuit element of Comparative Example 1.Figure 4B shows the frequency characteristics of the attenuation of the non-reversible circuit element in Comparative Example 1.Figure 5A shows the frequency characteristics of the VSWR and insertion loss of the non-reversible circuit element of Comparative Example 2.Figure 5B shows the frequency characteristics of the attenuation of the non-reversible circuit element in Comparative Example 2.Figure 6A shows the frequency characteristics of the input-side VSWR and insertion loss of the non-reversible circuit element of Example 2.Figure 6B shows the output VSWR and isolation frequency characteristics of the non-reversible circuit element of Example 2.Figure 7A shows the frequency characteristics of the input-side VSWR and insertion loss of the non-reversible circuit element of Comparative Example 3.Figure 7B shows the output VSWR and isolation frequency characteristics of the non-reversible circuit element of Comparative Example 3. Figure 1 is an exploded perspective view of the non-reversible circuit element 30 of this embodiment. The non-reversible circuit element 30 is suitable for frequencies in the 3GHz to 6GHz band, for example, and is used in the transmitting and receiving circuits of mobile phones and mobile phone base stations. The external dimensions of the non-reversible circuit element 30 are, for example, approximately 5mm in length, 5mm in width, and 2.5 to 4mm in height. The non-reversible circuit element 30 is a lumped-parameter non-reversible circuit element. The non-reversible circuit element 30 comprises a ferrimagnetic material 3, multiple central conductors, and a stacked magnet 2. The ferrimagnetic material 3 has, for example, a disc shape with a main surface 3a. For example, the diameter of the main surface 3a is approximately 1.5 mm to 2.5 mm. The ferrimagnetic material 3 preferably has a low saturation magnetic flux density of, for example, 40 mT to 80 mT, and a low ferromagnetic resonance full width at half maximum (ΔH < 2500 A/m). Furthermore, the temperature coefficient (temperature dependence) of the saturation magnetic flux density is preferably -0.45%/°C to -0.25%/°C. Even more preferably, the saturation magnetic flux density is 40 mT to 70 mT, and the low ferromagnetic resonance full width at half maximum (ΔH < 2000 A/m). The temperature coefficient (temperature dependence) of the saturation magnetic flux density is even more preferably -0.4%/°C to -0.3%/°C. The ferrimagnetic material 3 is, for example, made of a ferrimagnetic compound such as yttrium iron garnet (YIG). Multiple central conductors are electrically insulated from each other and arranged on the main surface 3a of the ferrimagnetic material 3 in an overlapping, intersecting manner. In this embodiment, central conductors 4, 5, and 6 are arranged at a 120° angle. The ferrimagnetic material 3 and central conductors 4, 5, and 6 constitute a set 20. The stacked magnet 2 includes a rare-earth magnet 2A and a ferrite magnet 2B. The rare-earth magnet 2A contains Sm, and the ferrite magnet contains Sr. The rare-earth magnet 2A has a plate shape with main surfaces 2An and 2As, with the north pole located on the main surface 2An side and the south pole on the main surface 2As side. Similarly, the ferrite magnet 2B has a plate shape with main surfaces 2Bn and 2Bs, with the north pole located on the main surface 2Bn side and the south pole on the main surface 2Bs side. As shown in Figure 1, the rare-earth magnet 2A and the ferrite magnet 2B are stacked such that the main surface 2An of the rare-earth magnet 2A faces the main surface 2Bs of the ferrite magnet 2B. It is sufficient that the rare-earth magnet 2A and the ferrite magnet 2B are stacked in close proximit