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JP-2026076304-A - Method for manufacturing vapor deposition masks and electronic devices

JP2026076304AJP 2026076304 AJP2026076304 AJP 2026076304AJP-2026076304-A

Abstract

[Problem] The objective is to provide a vapor deposition mask capable of forming a vapor-deposited film with excellent pattern dimensions, and a method for manufacturing an electronic device using the vapor deposition mask. [Solution] The vapor deposition mask of the present invention has a first surface and a second surface opposite to the first surface, and a plurality of openings are formed penetrating between the first surface and the second surface, wherein a protruding portion is formed on the side wall surface of the opening, extending from the first surface side to the second surface side, and the ratio of the protrusion of the protruding portion to the opening width of the opening is 0.001 or more and 0.018 or less. [Selection Diagram] Figure 3

Inventors

  • 茂木 涼真
  • 碓氷 数馬
  • 小林 昭彦

Assignees

  • ＴＯＰＰＡＮホールディングス株式会社

Dates

Publication Date
20260511
Application Date
20260210
Priority Date
20240617

Claims (10)

  1. A vapor deposition mask having a first surface and a second surface opposite to the first surface, wherein a plurality of openings are formed penetrating between the first surface and the second surface, A protruding portion is formed on the side wall surface of the opening, extending from the first surface to the second surface. The ratio of the protrusion of the ridge to the opening width of the opening is 0.001 or more and 0.018 or less. A vapor deposition mask characterized by the following features.
  2. The aforementioned protrusion ratio is 0.014 or less. The vapor deposition mask according to feature 1.
  3. When the substrate side to be deposited is referred to as the first surface and the deposition source side as the second surface, The aforementioned opening width is defined by the opening width on the first surface side. The vapor deposition mask according to feature 1.
  4. The average protrusion dimension of the aforementioned ridge is 150 nm or less. The vapor deposition mask according to feature 1.
  5. The maximum protrusion dimension of the aforementioned ridge is 200 nm or less. The vapor deposition mask according to feature 1.
  6. The aperture width is 10 μm or less. The vapor deposition mask according to feature 1.
  7. The deposition mask has a configuration in which a membrane having the opening is supported on a support substrate, and the membrane is composed of a single-layer silicon nitride film structure or a multilayer structure of silicon nitride film and silicon oxide film. The vapor deposition mask according to feature 1.
  8. The deposition mask has a membrane with the openings, and is composed of an SOI substrate in which a support substrate, an insulating layer, and a semiconductor layer are stacked in that order from the deposition source side to the substrate to be deposited. The semiconductor layer is the membrane, The vapor deposition mask according to claim 1, characterized in that a SiN layer is formed on the surface side of the membrane which is the substrate to be vapor-deposited, or on the back side of the support substrate which is the vapor deposition source side, or on both the surface side and the back side.
  9. The deposition mask has a configuration in which a membrane having the opening is supported on a support substrate. The vapor deposition mask according to claim 1, characterized in that at least one of the membrane or the support substrate has a polycrystalline silicon structure.
  10. The deposition mask described in claim 1 is placed between the substrate to be deposited and the deposition source such that the first surface faces the substrate to be deposited and the second surface faces the deposition source. The deposition material is deposited onto the surface of the substrate to be deposited through the opening. A method for manufacturing an electronic device characterized by the following:

Description

This invention relates to a vapor deposition mask and a method for manufacturing electronic devices. For example, vapor deposition masks used for separating RGB colors in the fabrication of organic EL displays are well-known. Patent Document 1 describes a vapor deposition mask in which a mask pattern is formed on a silicon layer. It is disclosed that the mask pattern is formed by etching. Patent document 2 describes a vapor deposition mask having a large number of pixel apertures. It is disclosed that these pixel apertures are formed by etching. Korean Patent No. 10-2358269Japanese Patent Publication No. 2022-175925 This is a cross-sectional view showing an example of a vapor deposition mask according to this embodiment.This is an enlarged plan view of the opening.This is an enlarged front view of the side wall surface revealed by cutting through the opening.Figure 4A is an SEM image showing the reference for measuring the protruding dimensions of the ridge, and Figure 4B is a schematic diagram thereof.Figure 5A is an SEM image showing a magnified portion of the aperture, and Figure 5B is a schematic diagram thereof.Figures 6A to 6E are schematic diagrams illustrating the method for calculating the opening width.Figure 7A is an SEM image of the side wall surface of the opening, and Figure 7B is a schematic diagram thereof.This is an illustrative diagram showing how vapor deposition material is deposited on the side wall surface of an opening.This is a process diagram showing an example of a method for manufacturing the vapor deposition mask of this embodiment.This is a process diagram showing an example of a method for manufacturing the vapor deposition mask of this embodiment.This is a cross-sectional view showing a method for manufacturing an electronic device using the deposition mask of this embodiment.This is a cross-sectional view showing an example of a vapor deposition mask according to another embodiment.This is a cross-sectional view showing an example of a vapor deposition mask according to another embodiment.This is a cross-sectional view showing an example of a vapor deposition mask according to another embodiment.This is a cross-sectional view showing an example of a vapor deposition mask according to another embodiment. The embodiments will be described below with reference to the drawings. However, the drawings are schematic or conceptual, and the dimensions and proportions in each drawing are not necessarily identical to those of actual objects. Furthermore, even when the same part is represented between drawings, the relationships between dimensions and proportions may differ. In particular, the embodiments shown below illustrate structures for realizing the technical concept of the present invention and do not specify the technical concept of the present invention. In the following description, elements having the same function and configuration are denoted by the same reference numeral, and redundant explanations are omitted. Also, the lower and upper limits of numerical ranges include the error range. Furthermore, the notation "~" includes the lower and upper limits. <Background to the present invention> Vapor deposition masks used for RGB color separation in OLED display fabrication are well-known, and there is a growing demand for vapor deposition masks specifically for RGB color separation. A deposition mask has multiple openings corresponding to the deposited film, and the accuracy of these openings is crucial for improving the pattern dimensions of the deposited film. The deposition mask is placed between the substrate to be deposited and the deposition source. The deposition material travels from the deposition source through the opening in the deposition mask to the surface of the substrate. If the deposition material accumulates on the sidewalls of the opening, the opening width becomes narrower than the actual width, making it difficult to form a deposition film with excellent pattern dimensions. Figure 8 shows an image of the deposition of the vapor-deposited material 12 on the side wall surface 52 of the opening 51 formed in the membrane 50. In this way, the deposition of the vapor-deposited material 12 on the side wall surface 52 of the opening 51 creates a shadow effect. Shadow effects during the manufacturing of high-resolution OLED display devices reduce the pattern dimensions of the deposited film. This reduction in pattern dimensions impacts device performance and becomes a limiting factor in the resolution of OLED microdisplay devices. As a result of diligent research, the inventors focused on the fact that the deposition material accumulates in the steps of the vertical ridges (protrusions) that form on the sidewall surface when the opening is processed by dry etching. By optimizing the ratio of the protrusion of these ridges to the opening width, they have developed a deposition mask that allows for a larger pattern size of the deposited film. <Overview of the vapor