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JP-2026076312-A - electrostatic chuck

JP2026076312AJP 2026076312 AJP2026076312 AJP 2026076312AJP-2026076312-A

Abstract

[Problem] To provide an electrostatic chuck that can improve the uniformity of the in-plane temperature distribution of an object being processed while suppressing the complexity of temperature control. [Solution] An electrostatic chuck comprising a ceramic dielectric substrate, a base plate, and a heater section, wherein the heater section has a first heater element, a bypass layer, and first and second power supply terminals, the first heater element has a plurality of zones including a first zone, the first zone has a first heater line and first and second power supply sections, the first and second power supply sections are provided in positions that do not overlap with the first and second power supply terminals, the first heater line has a first extension section provided with a first protrusion and a second extension section provided with a second protrusion, the first zone has a first opposing region where the first protrusion and the second protrusion are arranged adjacent to each other and facing each other, and the first opposing region is provided in a position that overlaps with at least one of the first power supply terminal and the second power supply terminal. [Selection Diagram] Figure 15

Inventors

  • 小野 瑛人
  • 上藤 淳平

Assignees

  • ＴＯＴＯ株式会社

Dates

Publication Date
20260511
Application Date
20260213
Priority Date
20220329

Claims (4)

  1. A ceramic dielectric substrate having a first main surface on which the object to be processed is placed, and a second main surface opposite to the first main surface, A base plate having an upper surface on the ceramic dielectric substrate side, a lower surface opposite to the upper surface, and a refrigerant flow path for a cooling medium, and supporting the ceramic dielectric substrate, A heater section for heating the ceramic dielectric substrate, Equipped with, The heater section comprises a first heater element, a second heater element, a bypass layer which is a power supply path to the first heater element and the second heater element, and a first power supply terminal, a second power supply terminal, a third power supply terminal, and a fourth power supply terminal electrically connected to the bypass layer. The first heater element is provided between the first main surface and the upper surface, The second heater element is provided between the first main surface and the first heater element or between the first heater element and the upper surface. The first heater element has a plurality of zones, The plurality of zones of the first heater element have a first zone, The first zone includes a first heater line that generates heat when an electric current flows through it, and a first power supply unit and a second power supply unit that supply power to the first heater line. The first power supply unit is provided in a position that does not overlap with the first power supply terminal in the Z direction perpendicular to the first main surface, and is electrically connected to the first power supply terminal via the bypass layer. The second power supply unit is provided in a position that does not overlap with the second power supply terminal in the Z direction, and is electrically connected to the second power supply terminal via the bypass layer. The second heater element has multiple zones, The plurality of zones of the second heater element have a second zone, The second zone includes a second heater line that generates heat when current flows through it, and a third power supply unit and a fourth power supply unit that supply power to the second heater line. The third power supply unit is provided in a position that does not overlap with the third power supply terminal in the Z direction, and is electrically connected to the third power supply terminal via the bypass layer. The fourth power supply unit is provided in a position that does not overlap with the fourth power supply terminal in the Z direction, and is electrically connected to the fourth power supply terminal via the bypass layer. An electrostatic chuck wherein at least one of the third power supply terminal and the fourth power supply terminal is provided at a position that coincides with a virtual line segment connecting the center of the first power supply unit and the center of the second power supply unit in the Z direction.
  2. The electrostatic chuck according to claim 1, wherein at least one of the centers of the third power supply terminal and the fourth power supply terminal is located at a position overlapping with the virtual line segment.
  3. The first zone, when viewed along the Z direction, has a central region located in the center of the first zone and an outer peripheral region located outside the central region. The electrostatic chuck according to claim 1 or 2, wherein at least one of the first power supply unit and the second power supply unit is provided in the central region.
  4. The first zone includes the outer edge of the first heater element, The first zone has an inner circumferential portion located radially inside the radial center line that divides the first zone radially into two equal parts, and an outer circumferential portion located radially outside the radial center line and including the outer edge. The electrostatic chuck according to claim 1 or 2, wherein at least one of the first power supply unit and the second power supply unit is provided on the inner circumference.

Description

Aspects of this invention generally relate to electrostatic chucks. In plasma processing chambers used for etching, CVD (Chemical Vapor Deposition), sputtering, ion implantation, and ashing, electrostatic chucks are used to hold and adsorb objects such as semiconductor wafers and glass substrates. Electrostatic chucks work by applying electrostatic power to their internal electrodes, thereby attracting substrates such as silicon wafers through electrostatic force. In recent years, there has been a demand for miniaturization and increased processing speed in IC chips, including semiconductor elements such as transistors. Consequently, there is a need to improve the processing accuracy, such as etching, when forming semiconductor elements on wafers. Etching accuracy refers to whether the wafer processing can create patterns with the designed width and depth. Improving etching accuracy allows for miniaturization of semiconductor elements and increased integration density. In other words, improving processing accuracy enables both miniaturization and increased speed of chips. It is known that the processing accuracy, such as etching, depends on the wafer temperature during processing. Therefore, in substrate processing equipment equipped with an electrostatic chuck, controlling the temperature distribution within the wafer surface during processing is required to achieve a uniform etching rate. One known method for controlling the temperature distribution within the wafer surface is to use an electrostatic chuck with a built-in heater (heating element). In particular, with the miniaturization of semiconductor devices in recent years, there is a demand for faster heating and more precise control of the in-plane temperature distribution. To achieve this, a two-layer structure consisting of a main heater and a sub-heater is known. Furthermore, heater patterns for configurations with multiple zones are also known. Japanese Patent Publication No. 2004-111107 This is a schematic perspective view of an electrostatic chuck according to an embodiment.Figures 2(a) and 2(b) are schematic cross-sectional views showing a part of the electrostatic chuck according to the embodiment.This is an exploded perspective view schematically showing the heater section according to the embodiment.This is an exploded cross-sectional view schematically showing the heater section according to the embodiment.This is a schematic plan view showing the main zone of the main heater element according to the embodiment.This is a schematic plan view showing a subzone of a subheater element according to the embodiment.This is a schematic plan view showing the positional relationship between the main zone of the main heater element and the subzone of the subheater element according to the embodiment.This is a schematic plan view showing a part of the first zone of the heater section according to the embodiment.This is a schematic plan view showing a part of the first zone of the heater section according to a modified embodiment.This is a schematic plan view showing a part of the first zone of the heater section according to a modified embodiment.This is a schematic plan view showing a part of the first zone of the heater section according to a modified embodiment.This is a schematic plan view showing a part of the first zone of the heater section according to a modified embodiment.This is a schematic plan view showing the positional relationship between a part of the first zone and the second zone of the heater section according to the first embodiment.This is a schematic plan view showing the positional relationship between a part of the first zone and the second zone of the heater section according to the first embodiment.This is a schematic plan view showing the first zone of the heater section according to the second embodiment.This is a schematic plan view showing the first zone of the heater section according to the third embodiment.This is a schematic plan view showing the first zone of the heater section according to the fourth embodiment.This is a schematic plan view showing the first zone of the heater section according to the fifth embodiment. The embodiments of the present invention will be described below with reference to the drawings. In each drawing, similar components are denoted by the same reference numerals, and detailed descriptions are omitted as appropriate. Figure 1 is a schematic perspective view of an electrostatic chuck according to an embodiment. Figures 2(a) and 2(b) are schematic cross-sectional views showing a part of the electrostatic chuck according to the embodiment. In Figure 1, for the sake of explanation, a cross-sectional view of a part of the electrostatic chuck is shown. Figure 2(a) is a cross-sectional view taken along the line A1-A2 shown in Figure 1. Figure 2(b) is an enlarged view of region B1 shown in Figure 2(a). Note that the object to be processed W is omitted in Figure 2(b). As shown in Figures 1, 2(a