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JP-2026514246-A - Multichannel precursor delivery system

JP2026514246AJP 2026514246 AJP2026514246 AJP 2026514246AJP-2026514246-A

Abstract

A precursor delivery system for supplying a precursor to a process chamber includes a housing and a removable precursor dispensing assembly detachably coupled to the housing and configured to supply a precursor to the process chamber, the removable precursor dispensing assembly including an ampoule and a first valve assembly fluidly coupled to the ampoule and including a first valve, a second valve, a third valve, and a fourth valve. The precursor delivery system also includes a controller.

Inventors

  • ハリシュ・クマール・プレマクマール
  • カイル・ワット・ハート
  • アダム・フィッシャー
  • オーニッシュ・グプタ
  • ショーア・アレン・ラッセル
  • チャンドラシェカル・ラケシュ
  • スティーヴン・パヨンク・ルトゥルノー

Assignees

  • ラム リサーチ コーポレーション

Dates

Publication Date
20260507
Application Date
20240423
Priority Date
20230502

Claims (10)

  1. A precursor delivery system for supplying a precursor to a process chamber, wherein the precursor delivery system is The housing includes a front cover, rear cover, top cover, bottom cover, and two side covers, A removable precursor dispensing assembly, which is removably coupled to the housing and configured to supply the precursor to the process chamber, An ampoule configured to receive the precursor and supply it to the process chamber, A first valve assembly fluidly coupled to the ampoule, A first valve fluidly coupled to the first inlet to the ampoule and the precursor source supply section, A second valve fluidly coupled to the second inlet to the ampoule and the source gas supply section, A third valve is fluid-coupled to the outlet and internal vapor discharge line of the ampoule, A first joint between the second valve and the fourth valve, and a fourth valve fluidly coupled to the second joint between the third valve and the fourth valve, A first valve assembly comprising, A removable precursor dispensing assembly comprising, A precursor delivery system comprising a controller for controlling the operation of the precursor delivery system.
  2. The removable precursor dispensing assembly further comprises a second valve assembly, the second valve assembly is A fifth valve fluidly coupled to the second valve and the flow controller, The first valve and the sixth and seventh valves are fluid-coupled to the vacuum source, The precursor delivery system according to claim 1, comprising an eighth valve fluidly coupled to the precursor source supply unit having the first valve.
  3. The precursor delivery system according to claim 2, wherein the internal vapor discharge line bypasses the second valve assembly.
  4. The precursor delivery system according to claim 2, wherein the second valve assembly is positioned above the first valve assembly.
  5. A vapor discharge line is detachably coupled to the rear cover of the housing and fluidly coupled to the ampoule of the removable precursor dispensing assembly, A conduit fluidly coupled to the steam discharge line, including a distribution point fluidly coupled to the showerhead of the process chamber, Furthermore, The conduit is located near the bottom of the precursor delivery system or below the precursor delivery system. The precursor delivery system according to claim 1.
  6. The precursor delivery system according to claim 1, further comprising a pressure gauge positioned outside the housing, wherein the pressure gauge is fluidly coupled to the conduit.
  7. The precursor delivery system according to claim 5, further comprising an elbow valve that fluidly connects the inner steam discharge line to the steam discharge line.
  8. The precursor delivery system according to claim 1, wherein the precursor includes a silicon-containing precursor.
  9. An apparatus for processing one or more substrates, wherein the apparatus is It comprises one or more process chambers, and each process chamber is A chuck for supporting the circuit board, A precursor delivery system for supplying one or more precursors into the process chamber to form a film, Equipped with, The aforementioned precursor delivery system is The housing includes a front cover, rear cover, top cover, bottom cover, and two side covers. One or more removable precursor dispensing assemblies are removably housed within the housing, each of the one or more removable precursor dispensing assemblies is An ampoule configured to store the aforementioned precursor, A first valve assembly fluidly coupled to the ampoule, A first valve fluidly coupled to the first inlet to the ampoule and the precursor source supply section, A second valve fluidly coupled to the second inlet to the ampoule and the source gas supply section, A third valve is fluid-coupled to the outlet and internal vapor discharge line of the ampoule, A first joint between the second valve and the fourth valve, and a fourth valve fluidly coupled to the second joint between the third valve and the fourth valve, A first valve assembly comprising, A removable precursor dispensing assembly comprising one or more removable precursor dispensing assemblies, A controller for controlling the operation of the aforementioned precursor delivery system, Equipped with, The aforementioned controller, The ampoule receives the precursor from the precursor source supply unit. The carrier gas is flowed from the source gas supply unit to the ampoule to form a mixture containing the precursor and the carrier gas. The program includes instructions for flowing the mixture from the ampoule into the process chamber. Device.
  10. The apparatus according to claim 9, wherein the apparatus is configured for atomic layer deposition, plasma-enhanced atomic layer deposition, chemical vapor deposition, or plasma-enhanced chemical vapor deposition.

Description

Incorporation by Reference: The PCT invoice is filed concurrently with this application as part of this application. Each application claiming interest or priority identified in the PCT invoice filed concurrently with this application is incorporated herein by reference in its entirety for any purpose. In some semiconductor processing operations, such as deposition, chemical precursors are stored in ampoules and delivered to a process chamber to form layers on a substrate. The chemical precursors may be mixed with a carrier gas within the ampoules. In some deposition processes, two or more chemical precursors are delivered to the process chamber. The background art provided herein is for the purpose of generally presenting the context of this disclosure. To the extent described in the background art section, the inventors' research, and any aspects of the description that may not be considered prior art at the time of filing, are not expressly or implicitly considered prior art to this disclosure. This is a perspective view of an exemplary precursor delivery system for a process chamber according to several embodiments.This figure shows the internal workings of an exemplary precursor delivery system according to several embodiments.This is a schematic flow diagram of the precursor and carrier gas in an exemplary precursor delivery system according to several embodiments.This is an enlarged view of the interior of an exemplary precursor delivery system for delivering precursors and carrier gases, according to several embodiments.Figure 4 shows an example of a precursor delivery system for delivering a precursor and carrier gas according to several embodiments.This is an exemplary rear view of an exemplary precursor delivery system according to several embodiments.This is a schematic diagram of an exemplary processing apparatus for delivering a precursor according to several embodiments. The following description includes numerous specific details to provide a thorough understanding of the presented embodiments. The disclosed embodiments may be implemented without some or all of these specific details. In other examples, well-known process behaviors are not described in detail to avoid unnecessarily obscuring the disclosed embodiments. While the disclosed embodiments are described in conjunction with specific embodiments, it should be understood that this is not intended to limit the disclosed embodiments. In this disclosure, the terms “semiconductor wafer,” “wafer,” “substrate,” and “film on substrate” are used interchangeably. Those skilled in the art will understand that the term “film on substrate” can refer to one or more partially manufactured integrated circuits formed on a substrate during any of the many stages of integrated circuit manufacturing. Wafers or substrates used in the semiconductor device industry typically have a diameter of 200 mm, 300 mm, or 450 mm. The following detailed description assumes that this disclosure is implemented on a wafer. However, this disclosure is not limited thereto. Workpieces may vary in shape, size, and material. In addition to semiconductor wafers, other workpieces on which this disclosure can be utilized include various articles such as printed circuit boards. In this disclosure, the terms “deposit” and “form” are used interchangeably. Similarly, the terms “layer,” “film,” and “thin film” are used interchangeably. Those skilled in the art will understand that the “formation” of a “layer” in any of the many stages of integrated circuit manufacturing can refer to the “deposit” of a “film” or “thin film” by one of various film formation methods, including chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), or plasma-enhanced atomic layer deposition (PEALD), due to the reduction in feature size in semiconductor devices. Semiconductor device manufacturing typically involves various deposition processes for depositing films on substrates to form integrated circuits and associated devices by various methods including CVD, PECVD, ALD, or PEALD, where a gas mixture containing one or more precursors is introduced into a process chamber to deposit films on the substrate. In some substrate processing systems, radio frequency (RF) plasma may be used to activate the chemical reactions. ALD or PEALD is a film deposition process well suited for the deposition of conformal films due to the fact that a single cycle of ALD or PEALD deposits a single thin layer of material, the thickness being limited by the amount of one or more precursors that can be adsorbed onto the substrate surface before the film-forming chemical reaction itself (i.e., forming an adsorption limiting layer). Multiple "ALD cycles" may then be used to build films of the desired thickness, and since each layer is thin and conformal, the resulting films substantially conform to the shape of the underlying device structure. In certain embodiments, eac