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JP-2026514319-A - Multiple overhangs against enhanced pixel encapsulation

JP2026514319AJP 2026514319 AJP2026514319 AJP 2026514319AJP-2026514319-A

Abstract

Embodiments described herein relate to a device comprising a substrate, a plurality of protruding structures, and a plurality of subpixels. The plurality of protruding structures include a first structure, a second structure disposed on the upper surface of the first structure, an adjacent first protrusion, a third structure disposed on the second structure, and an adjacent second protrusion. Each first protrusion is defined by a first protrusion extension of the second structure that extends laterally past the upper surface of the first structure. Each subpixel includes an anode, an organic light-emitting diode (OLED) material disposed on the anode, and a cathode disposed on the OLED material.

Inventors

  • リン ユ－シン
  • チェン チュン－チア
  • リー ジュンミン

Assignees

  • アプライド マテリアルズ インコーポレイテッド

Dates

Publication Date
20260511
Application Date
20240207
Priority Date
20230425

Claims (20)

  1. circuit board and A plurality of protruding structures are arranged on the substrate, and each protruding structure is The first structure and A second structure is placed on the upper surface of the first structure, An adjacent first projection, each first projection defined by an extension of the first projection of the second structure that extends laterally past the upper surface of the first structure, A third structure placed on top of the second structure, Multiple cantilever structures having adjacent second cantilevers, It consists of multiple subpixels, and each subpixel is A-scatter, An organic light-emitting diode (OLED) material disposed on the anode, A device comprising a plurality of subpixels, each comprising a cathode disposed on the OLED material.
  2. The device according to claim 1, wherein the adjacent second protrusion is defined by a second protrusion extension of the third structure that extends laterally past the upper surface of the second structure, and the third structure is positioned on the upper surface of the second structure.
  3. The third structure described above is The bottom and, The top surface is wider than the bottom surface, The device according to claim 1, further comprising a side wall formed between the bottom surface and the top surface, wherein the adjacent second protrusion is defined by the side wall.
  4. The third structure further comprises a fourth structure disposed on the upper surface thereof, wherein the fourth structure is The bottom and, The top surface is wider than the bottom surface, The device according to claim 3, comprising a side wall formed between the bottom surface and the top surface, and an adjacent third protrusion defined by the side wall.
  5. The device according to claim 1, wherein there are adjacent third projections, each third projection defined by a third extension of a fourth structure that extends laterally past the upper surface of the third structure, and the fourth structure further comprises adjacent third projections positioned on the upper surface of the third structure.
  6. The device according to claim 1, further comprising an intermediate structure disposed on the second structure, wherein the third structure is disposed on the intermediate structure.
  7. The third structure further comprises a fourth structure disposed on the upper surface thereof, wherein the fourth structure is The bottom and, The top surface is wider than the bottom surface, The device according to claim 1, comprising a side wall formed between the bottom surface and the top surface, and an adjacent third protrusion defined by the side wall.
  8. The device according to claim 1, further comprising a pixel structure (PS) disposed on the substrate, wherein the protruding structure is disposed on the PS.
  9. The device according to claim 7, wherein the PS comprises polyimide, silicon oxide (SiO₂), silicon nitride (Si₃N₄), silicon oxynitride (Si₂N₂O ) , magnesium fluoride ( MgF₂ ), or a combination thereof.
  10. The device according to claim 1, further comprising a pixel structure (PS) disposed on the substrate, wherein the protruding structure is disposed on the PS.
  11. The device according to claim 9, wherein the PS comprises polyimide, silicon oxide (SiO₂), silicon nitride (Si₃N₄), silicon oxynitride (Si₂N₂O ) , magnesium fluoride ( MgF₂ ), or a combination thereof.
  12. circuit board and A plurality of protruding structures are arranged on the substrate, and each protruding structure is The first structure and A second structure is disposed on the upper surface of the first structure, and the second structure is Internal plane and, Top surface and, An upper side wall formed between the aforementioned internal plane and the aforementioned upper surface, The bottom and, A second structure comprising a lower side wall formed between the internal plane and the bottom surface, An adjacent first projection, each first projection defined by an extension of the first projection of the second structure that extends laterally past the upper surface of the first structure, A plurality of cantilever structures comprising an adjacent second cantilever formed by the upper side wall, It consists of multiple subpixels, and each subpixel is A-scatter, An organic light-emitting diode (OLED) material disposed on the anode, A device comprising a plurality of subpixels, each comprising a cathode disposed on the OLED material.
  13. The device according to claim 12, wherein the width of the upper side wall is wider than the width of the second structure in the internal plane.
  14. The device according to claim 12, further comprising a pixel structure (PS) disposed on the substrate, wherein the protruding structure is disposed on the PS.
  15. The device according to claim 14, wherein the pixel structure (PS) comprises polyimide, silicon oxide ( SiO₂ ), silicon nitride ( Si₃N₄ ), silicon oxynitride ( Si₂N₂O ), magnesium fluoride ( MgF₂ ), or a combination thereof.
  16. The device according to claim 12, further comprising a pixel structure (PS) disposed on the substrate, wherein the protruding structure is disposed on the PS.
  17. The device according to claim 15, wherein the PS comprises polyimide, silicon oxide (SiO₂), silicon nitride (Si₃N₄), silicon oxynitride (Si₂N₂O ) , magnesium fluoride ( MgF₂ ), or a combination thereof.
  18. The process involves depositing a first structural layer and a second structural layer on a substrate, The portion exposed by the resist of the second structural layer is removed to form the second and third structures, The first structure is formed by removing the portion of the first structural layer exposed by the resist, Removing the resist from the third structure, A method comprising depositing organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer.
  19. The method according to claim 18, wherein the portion of the second structural layer is removed by a dry etching process.
  20. The method according to claim 18, wherein the portion of the first structural layer is removed by a wet etching process.

Description

The embodiments described herein generally relate to displays. More specifically, the embodiments described herein relate to subpixel circuits that may be used in displays such as organic light-emitting diode (OLED) displays, and methods for forming subpixel circuits. Input devices, including display devices, are used in a variety of electronic systems. Organic light-emitting diodes (OLEDs) are light-emitting diodes (LEDs) in which the light-emitting electroluminescent layer is a film of an organic compound, and this film emits light in response to an electric current. OLED devices are classified as bottom-emitting devices if the emitted light passes through a transparent or translucent bottom electrode and substrate on which the panel is manufactured. Top-emitting devices are classified based on whether the light emitted from the OLED device passes through a lid added after the device was manufactured. OLEDs are used today to manufacture display devices for many electronic devices. Today's electronics manufacturers are pushing to reduce the size of these display devices while simultaneously providing higher resolution than was possible just a few years ago. OLED pixel patterning is currently based on processes that limit panel size, pixel resolution, and substrate size. Photolithography is preferable to using fine metal masks for pixel patterning. Currently, OLED pixel patterning requires the removal of organic material after the patterning process. Once removed, the organic material causes particle problems that impair OLED performance. Therefore, there is a need in this field for sub-pixel circuits and methods for forming sub-pixel circuits to increase the number of pixels per inch and provide improved OLED performance. In one embodiment, a device is provided. This device includes a substrate, a plurality of protruding structures, and a plurality of subpixels. The plurality of protruding structures include a first structure, a second structure positioned on the upper surface of the first structure, an adjacent first protrusion, a third structure positioned on the second structure, and an adjacent second protrusion. Each first protrusion is defined by a first protrusion extension of the second structure that extends laterally beyond the upper surface of the first structure. Each subpixel includes an anode, an organic light-emitting diode (OLED) material positioned on the anode, and a cathode positioned on the OLED material. In another embodiment, a device is provided. This device includes a substrate, a plurality of protruding structures disposed on the substrate, and a plurality of subpixels. Each protruding structure includes a first structure, a second structure disposed on the upper surface of the first structure, an adjacent first protrusion, and an adjacent second protrusion. The second structure includes an internal plane, a top surface, an upper sidewall formed between the internal plane and the top surface, a bottom surface, and a lower sidewall formed between the internal plane and the bottom surface. Each first protrusion is defined by a first protruding extension of the second structure that extends laterally past the upper surface of the first structure. Each second protrusion is formed by the upper sidewall. Each subpixel includes an anode, an organic light-emitting diode (OLED) material disposed on the anode, and a cathode disposed on the OLED material. In another embodiment, a method is provided. This method includes depositing a first structural layer and a second structural layer on a substrate. The portion exposed by the resist of the second structural layer is removed to form the second and third structures. The portion exposed by the resist of the first structural layer is removed to form the first structure. The resist is removed from the third structure. Organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer are deposited. A more detailed description of the disclosure outlined above can be obtained by referring to embodiments, some of which are shown in the accompanying drawings, so that the features of the disclosure listed above can be understood in detail. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered limiting the scope of the disclosure, as other equally valid embodiments may be accepted. This is a schematic cross-sectional view of a subpixel circuit according to an embodiment.This is a schematic cross-sectional view of a protruding subpixel circuit structure according to an embodiment.This is a schematic cross-sectional view of a subpixel circuit according to an embodiment.This is a schematic cross-sectional view of a protruding subpixel circuit structure according to an embodiment.This is a schematic cross-sectional view of a protruding subpixel circuit structure according to an embodiment.This is a schematic cross-sectional view of a protruding subpixel circuit structure acc