JP-2026514467-A - Decreased etching resistance in advanced substrate patterning

Abstract

A subpixel circuit and a method for forming a subpixel circuit that can be used in displays such as organic light-emitting diode (OLED) displays. In one example, the device includes a substrate, a pixel definition layer (PDL) structure disposed on the substrate and defining subpixels of the device, and a plurality of overhang structures. A first subpixel includes a first anode, an OLED material, a first cathode, and a first encapsulation layer having a gap defined by a first portion of a first encapsulation layer disposed on the first cathode, a second portion of a first encapsulation layer disposed on the side wall of a main structure, and a third portion of a first encapsulation layer below the lower surface of the upper extension of a superstructure, wherein the first portion of the first encapsulation layer is in contact with the third portion of the first encapsulation layer. [Selection Diagram] Figure 1B

Inventors

• チェン チュン－チア
• チョン ジ ヨン
• ハース ディーター
• リン ユ－シン
• リー ジュンミン
• ウー ウェン－ハオ
• キム シ キョン

Assignees

• アプライド マテリアルズ インコーポレイテッド

Dates

Publication Date

20260511

Application Date

20240423

Priority Date

20230425

Claims (20)

1. circuit board and A pixel definition layer (PDL) structure is disposed on the substrate and defines the subpixels of the device, A plurality of overhang structures, each defined by an upper extension of a superstructure that extends laterally beyond the main structure, wherein each main structure is positioned on the upper surface of each PDL structure, and adjacent overhang structures define a plurality of subpixels including a first subpixel, Equipped with, The first subpixel described above is The first anode and, A first organic light-emitting diode (OLED) material is disposed above the first anode and below the adjacent overhang structure, A first cathode is disposed on the first OLED material and below the adjacent overhang structure, The first sealing layer, The first portion of the first encapsulation layer placed on the first cathode, The second portion of the first sealing layer, which is positioned on the side wall of the main body structure, The third portion of the first sealing layer below the lower surface of the upper extension of the superstructure, The fourth portion of the first sealing layer, which is positioned on the upper surface of the superstructure, A gap defined by the first portion, the second portion, and the third portion, wherein the first portion of the first encapsulation layer contacts the third portion of the first encapsulation layer, and the space between the fourth portion of the first encapsulation layer and the fourth portion of the second encapsulation layer disposed on the upper surface of the superstructure, A first encapsulation layer having, A device equipped with the following features.
2. The second anode and, A second organic light-emitting diode (OLED) material is positioned on the second anode, in contact with the second anode, and positioned beneath the adjacent overhang structure, A second cathode is positioned on the second OLED material and below the adjacent overhang structure, A second encapsulation layer having the gap defined by the first portion of the second encapsulation layer disposed on the second cathode, the second portion of the second encapsulation layer disposed on the side wall of the main body structure, and the third portion of the second encapsulation layer below the lower surface of the upper extension of the upper structure, wherein the first portion of the second encapsulation layer is in contact with the third portion of the second encapsulation layer, A second subpixel comprising, The device according to claim 1, further comprising:
3. The third anode and A third organic light-emitting diode (OLED) material is positioned on the third anode, in contact with the third anode, and positioned beneath the adjacent overhang structure, A third cathode is positioned on the third OLED material and below the adjacent overhang structure, A third encapsulating layer having the gap defined by the first portion of the third encapsulating layer disposed on the third cathode, the second portion of the third encapsulating layer disposed on the side wall of the main body structure, and the third portion of the third encapsulating layer below the lower surface of the upper extension of the upper structure, wherein the first portion of the third encapsulating layer is in contact with the third portion of the third encapsulating layer, The device according to claim 2, further comprising a third subpixel having the same.
4. The device according to claim 3, wherein the first encapsulation layer, the second encapsulation layer, and the third encapsulation layer include a silicon nitride material, a silicon oxynitride material, a silicon oxide material, or a combination thereof.
5. The device according to claim 3, wherein the first encapsulation layer comprises a material different from at least one of the second encapsulation layer or the third encapsulation layer.
6. The device according to claim 1, wherein the main body structure includes an inorganic material or a metal-containing material.
7. The device according to claim 3, wherein the first encapsulation layer, the second encapsulation layer, and the third encapsulation layer each comprise at least two layers of silicon-containing material, and at least one of the silicon-containing material layers of the first encapsulation layer, the second encapsulation layer, and the third encapsulation layer is different from the other two layers.
8. The device according to claim 2, wherein the first OLED material is positioned on the first anode, in contact with the first anode, and positioned below the overhang structure so as to contact the PDL structure, and the second OLED material is positioned on the second anode, in contact with the second anode, and positioned below the overhang structure so as to contact the PDL structure.
9. circuit board and A pixel definition layer (PDL) structure is disposed on the substrate and defines the subpixels of the device, A plurality of overhang structures, each defined by an upper extension of a superstructure that extends laterally beyond the main structure to form an overhang, wherein each main structure is positioned on the upper surface of each PDL structure, and adjacent overhang structures of the plurality of overhang structures define a plurality of subpixels including a first subpixel and a second subpixel, Equipped with, The first subpixel described above is The first anode and, A first organic light-emitting diode (OLED) material is disposed above the first anode and below the adjacent overhang structure, A first cathode is disposed on the first OLED material and below the adjacent overhang structure, A first encapsulation layer having an inner surface and an outer surface, wherein the inner surface is in contact with the first cathode, the side wall of the main body structure, the lower surface of the upper extension of the superstructure, and the upper surface of the superstructure, and the outer surface surrounds a void space outside the first encapsulation layer, Equipped with, The second subpixel is, The second anode and, A second organic light-emitting diode (OLED) material is disposed above the second anode and below the adjacent overhang structure, A second cathode is positioned on the second OLED material and below the adjacent overhang structure, A second encapsulation layer having the inner surface and the outer surface, wherein the inner surface is in contact with the second cathode, the side wall of the main body structure, the lower surface of the upper extension of the superstructure, and the outer surface of the first encapsulation layer on the superstructure, the outer surface surrounds the void space outside the second encapsulation layer, and the inner surface of the second encapsulation layer overlaps with the outer surface of the first encapsulation layer on the superstructure, A device equipped with the following features.
10. The third anode and A third organic light-emitting diode (OLED) material is positioned on the third anode, in contact with the third anode, and positioned beneath the adjacent overhang structure, A third cathode is positioned on the third OLED material and beneath the adjacent overhang structure, and is in contact with a portion of the overhang structure. A third encapsulation layer having the inner surface and the outer surface, wherein the inner surface is in contact with the third cathode, the side wall of the main body structure, and the lower surface of the upper extension of the superstructure, and the outer surface surrounds the void space outside the third encapsulation layer, The device according to claim 9, further comprising a third subpixel having the same.
11. The device according to claim 10, wherein the first encapsulation layer, the second encapsulation layer, and the third encapsulation layer include a silicon nitride material, a silicon oxynitride material, a silicon oxide material, or a combination thereof.
12. The device according to claim 9, wherein the main body structure includes an inorganic material, a non-conductive material, or a metal-containing material.
13. The device according to claim 9, wherein the superstructure comprises a non-conductive material, an inorganic material, or a metal-containing material.
14. The device according to claim 9, wherein the first cathode extends beyond the endpoint of the first OLED material to contact the PDL structure, and the second cathode extends beyond the endpoint of the second OLED material to contact the PDL structure.
15. The device according to claim 9, wherein the first OLED material is positioned on the first anode, in contact with the first anode, and positioned below the overhang structure so as to contact the PDL structure, and the second OLED material is positioned on the second anode, in contact with the second anode, and positioned below the overhang structure so as to contact the PDL structure.
16. circuit board and A pixel definition layer (PDL) structure is disposed on the substrate and defines the subpixels of the device, A plurality of overhang structures, each defined by an upper extension of a superstructure that extends laterally beyond the main structure, wherein each main structure is positioned on the upper surface of each PDL structure, and adjacent overhang structures define a plurality of subpixels including a first subpixel, Equipped with, The first subpixel described above is The first anode and, A first organic light-emitting diode (OLED) material is disposed on the first anode, in contact with the first anode, and positioned beneath the adjacent overhang structure, A first cathode is disposed on the first OLED material and below the adjacent overhang structure, The first sealing layer, The first portion of the first sealing layer that contacts the first cathode, The second portion of the first sealing layer that contacts the side wall of the main body structure, The third portion of the first sealing layer that contacts the lower surface of the upper extension of the superstructure, The fourth portion of the first sealing layer that contacts the upper surface of the superstructure, A gap defined by the first portion, the second portion, and the third portion, wherein the first portion of the first encapsulation layer contacts the third portion of the first encapsulation layer, and the space between the fourth portion of the first encapsulation layer and the fourth portion of the second encapsulation layer that contacts the upper surface of the superstructure. A first encapsulation layer having, A device equipped with the following features.
17. The device according to claim 16, wherein the first encapsulation layer comprises a silicon nitride material, a silicon oxynitride material, a silicon oxide material, or a combination thereof.
18. The device according to claim 16, wherein the first encapsulation layer comprises at least two layers of silicon-containing material.
19. The device according to claim 16, wherein the main body structure includes an inorganic material or a metal-containing material.
20. The device according to claim 16, wherein the first cathode extends beyond the endpoint of the first OLED material to contact the PDL structure.

Description

The embodiments described herein generally relate to displays. More specifically, the embodiments described herein relate to subpixel circuits and methods for forming subpixel circuits that may be used in displays such as organic light-emitting diode (OLED) displays. Input devices, including display devices, are used in a variety of electronic systems. Organic light-emitting diodes (OLEDs) are light-emitting diodes (LEDs) where the light-emitting electroluminescent layer is a film of an organic compound that emits light in response to an electric current. OLED devices are classified as bottom-emission devices if the emitted light passes through a transparent or translucent bottom electrode and the substrate on which the panel is manufactured. Top-emission devices are classified based on whether the light emitted from the OLED device exits through a lid that is added after the device is manufactured. OLEDs are used today to create display devices for many electronic devices. Today's electronics manufacturers are pushing to provide higher resolution than just a few years ago, while simultaneously reducing the size of these display devices. This is a schematic cross-sectional view of a subpixel circuit according to an embodiment.This is a schematic cross-sectional view of a subpixel circuit according to an embodiment.This is a schematic top cross-sectional view of a subpixel circuit having a dot-type architecture according to an embodiment.This is a schematic cross-sectional view of a subpixel circuit having a line-type architecture according to an embodiment.This is a schematic cross-sectional view of the overhang structure of a subpixel circuit according to an embodiment.This is a schematic cross-sectional view of the overhang structure of a subpixel circuit according to an embodiment.This is a flowchart of an on-demand method for forming subpixel circuits according to an embodiment.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment.This is a flowchart of a one-step method for forming a subpixel circuit according to an embodiment.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment described herein.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment described herein.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment described herein.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment described herein.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment described herein.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment described herein.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment described herein.This is a schematic cross-sectional view of a substrate in a method for forming a subpixel circuit according to an embodiment described herein. For ease of understanding, the same reference numerals are used to indicate identical elements common to the drawings, where possible. Elements disclosed in one embodiment are intended to be usefully utilized in relation to other embodiments without particular detail. The embodiments described herein generally relate to displays. More specifically, the embodiments described herein relate to subpixel circuits and methods for forming subpixel circuits t