JP-2026514518-A - Bonding method and method for manufacturing SOI substrate

Abstract

This application provides a bonding method and a method for manufacturing an SOI substrate. The bonding method includes the steps of providing a first silicon substrate and a second silicon substrate; performing an activation treatment on the surface of the first silicon substrate and/or the second silicon substrate to adsorb -OH groups onto the surface; temporarily bonding the first silicon substrate and the second silicon substrate to form a composite substrate; and heating the composite substrate after temporary bonding, maintaining the temperature for a predetermined time, and preserving and dehydrating the bonding interface. In this application, the van der Waals forces at the interface are converted into chemical bonding forces using the activation and preservation method, thereby increasing the bonding interface strength and reducing the width of the unbonded region. By applying this to the field of SOI substrate manufacturing, a better support environment for the delamination process can be provided.

Inventors

• 陳 猛
• 張 晨▲びん▼
• 叶 斐
• 黎 敬
• 王 千喜
• 劉 紅兵

Assignees

• 上海超硅半導体股▲フン▼有限公司
• 重慶超硅半導体有限公司

Dates

Publication Date

20260511

Application Date

20240321

Priority Date

20231130

Claims (10)

1. The steps include providing a first silicon substrate and a second silicon substrate, The steps include: performing an activation treatment on the surface of the first silicon substrate and/or the second silicon substrate to adsorb -OH groups onto its surface; The steps include: temporarily joining the first silicon substrate and the second silicon substrate to form a composite substrate; The steps include heating the composite substrate after temporary bonding, maintaining the temperature for a predetermined time, and keeping the bonding interface warm and dehydrating it, A joining method that includes [a specific type of joining].
2. The method according to claim 1, characterized by heating the composite substrate to 60 to 120°C after temporary bonding.
3. The method according to claim 1, characterized in that the predetermined time is 3 to 8 hours.
4. The method according to claim 1, characterized in that an activation treatment is performed on the surfaces of both the first silicon substrate and the second silicon substrate.
5. The method according to claim 1, characterized in that at least one surface of the first silicon substrate and the second silicon substrate has an oxide layer.
6. The steps include providing a first silicon substrate and a second silicon substrate, The steps include: performing ion implantation on the first silicon substrate to form a device layer; The steps include forming an oxide layer on the surface of the first silicon substrate and/or the second silicon substrate, The steps include: performing an activation treatment on the surface of the first silicon substrate and/or the second silicon substrate to adsorb -OH groups onto its surface; The steps include: temporarily joining the first silicon substrate and the second silicon substrate to form a composite substrate; The steps include heating the composite substrate after temporary bonding, maintaining the temperature for a predetermined time, and keeping the bonding interface warm and dehydrating it, A method for manufacturing an SOI substrate that includes [a specific component].
7. The method according to 6, characterized in that the composite substrate after temporary bonding is heated to 60 to 120°C.
8. The method according to claim 6, characterized in that the predetermined time is 3 to 8 hours.
9. The method according to 6, characterized in that an activation treatment is performed on the surfaces of both the first silicon substrate and the second silicon substrate.
10. The method according to 6, characterized in that an oxide layer is formed on both the surface of the first silicon substrate and the second silicon substrate.

Description

Reference to Related Applications This application claims priority to Chinese Patent Application No. 202311629938.5, filed on November 30, 2023, entitled “Method of Bonding and Method for Manufacturing an SOI Substrate,” the contents of which are incorporated herein by reference. This application relates to the field of semiconductor processes, and more particularly to bonding methods and methods for manufacturing SOI substrates. In the semiconductor field, a low-temperature temporary bonding technology already exists that obtains an SOI substrate by directly peeling the bonded wafer from the hydrogen-implanted surface after high-temperature annealing. However, in this process flow, a wide unbonded, floating region remains at the SOI edge after peeling. Therefore, improving the bonding process and reducing the width of the unbonded region at the SOI edge is a challenge that needs to be addressed in conventional technology. The technical problem that this application aims to solve is to provide a bonding method and a method for manufacturing an SOI substrate that can reduce the width of the unbonded region at the edge during the bonding process. To solve the above problems, the embodiments of this application provide a bonding method. This method includes the steps of: providing a first silicon substrate and a second silicon substrate; performing an activation treatment on the surface of the first silicon substrate and/or the second silicon substrate to adsorb -OH groups onto the surface; temporarily bonding the first silicon substrate and the second silicon substrate to form a composite substrate; and heating the composite substrate after temporary bonding, maintaining the heat for a predetermined time, and preserving and dehydrating the bonding interface. Optionally, the composite substrate is heated to 60-120°C after temporary bonding. Optionally, the specified time is 3 to 8 hours. Optionally, the surfaces of the first and second silicon substrates are subjected to activation treatment. Optionally, at least one surface of the first silicon substrate and the second silicon substrate has an oxide layer. To solve the above problems, the embodiments of this application further provide a method for manufacturing an SOI substrate. This method includes the steps of: providing a first silicon substrate and a second silicon substrate; performing ion implantation on the first silicon substrate to form a device layer; forming an oxide layer on the surface of the first silicon substrate and/or the second silicon substrate; performing an activation treatment on the surface of the first silicon substrate and/or the second silicon substrate to adsorb -OH groups on its surface; temporarily joining the first silicon substrate and the second silicon substrate to form a composite substrate; and heating the composite substrate after temporary joining, maintaining the heat for a predetermined time, and preserving and dehydrating the bonding interface. Optionally, the composite substrate is heated to 60-120°C after temporary bonding. Optionally, the specified time is 3 to 8 hours. Optionally, the surfaces of the first and second silicon substrates are subjected to activation treatment. Optionally, an oxide layer is formed on the surfaces of both the first and second silicon substrates. This application describes a method of converting van der Waals forces at the interface into chemical bonding forces using activation and heat retention, thereby increasing the bonding interface strength and reducing the width of the unbonded region. Applying this to the field of SOI substrate manufacturing can provide a superior support environment for the delamination process. A schematic diagram of the steps for implementing one specific embodiment of the joining method described in this application is shown.A diagram illustrating the principle of one specific embodiment of the joining method described in this application is shown.This diagram shows a schematic representation of the steps of one specific embodiment of the SOI substrate manufacturing method described in this application. The following describes in detail specific embodiments of the bonding method and SOI substrate manufacturing method provided in this application, with reference to the attached drawings. Figure 1 shows a schematic diagram of the steps of a specific embodiment of the bonding method described in this application, and includes: step S10 of providing a first silicon substrate and a second silicon substrate; step S11 of performing an activation treatment on the surface of the first silicon substrate and/or the second silicon substrate to adsorb -OH groups onto the surface; step S12 of temporarily bonding the first silicon substrate and the second silicon substrate to form a composite substrate; and step S13 of heating the composite substrate after temporary bonding, maintaining the temperature for a predetermined time, and preserving and dehydrating the bonding in