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JP-7854604-B2 - Structure, infrared detection device, light-emitting device, and method for manufacturing the structure

JP7854604B2JP 7854604 B2JP7854604 B2JP 7854604B2JP-7854604-B2

Inventors

  • 吉岡 達郎
  • 佐藤 夏希
  • 栗副 直樹
  • 澤 亮介
  • 関野 徹
  • 後藤 知代
  • 趙 成訓
  • 徐 寧浚

Assignees

  • パナソニックＩＰマネジメント株式会社

Dates

Publication Date
20260507
Application Date
20230707
Priority Date
20220719

Claims (8)

  1. The structure comprises a base material containing a continuous phase of polycrystalline alkali metal-containing complex fluorides, The aforementioned structure contains 85% by mass or more of inorganic material, The structure contains 50% by mass or more of the polycrystalline compound of the polyfluoride, The porosity of the aforementioned structure is 30% or less. The median pore size of the aforementioned structure is 500 nm or less. The thickness of the aforementioned structure is 10 μm or more. The aforementioned complex fluoride mainly contains fluorine, the aforementioned alkali metal, and an additional metal. The alkali metal includes sodium, or sodium and potassium. The additional metal includes at least one metal selected from the group consisting of magnesium and aluminum. A structure in which, within the target wavelength band of 3 μm to 5 μm, the wavelength bandwidth in which the linear transmittance continuously exceeds 50% is 0.1 μm or more.
  2. The structure comprises a base material containing a continuous phase of polycrystalline alkali metal-containing complex fluorides, The aforementioned structure contains 85% by mass or more of inorganic material, The structure contains 50% by mass or more of the polycrystalline compound of the polyfluoride, The porosity of the aforementioned structure is 30% or less. The median pore size of the aforementioned structure is 500 nm or less. The thickness of the aforementioned structure is 10 μm or more. The aforementioned complex fluoride mainly contains fluorine, the aforementioned alkali metal, and an additional metal. The alkali metal includes sodium, or sodium and potassium. The additional metal includes at least one metal selected from the group consisting of magnesium and aluminum. A structure in which the weight loss rate when the structure is heated from 200°C to 500°C is 0.5% or less.
  3. The structure comprises a base material containing a continuous phase of polycrystalline alkali metal-containing complex fluorides, The aforementioned structure contains 85% by mass or more of inorganic material, The structure contains 50% by mass or more of the polycrystalline compound of the polyfluoride, The porosity of the aforementioned structure is 30% or less. The median pore size of the aforementioned structure is 500 nm or less. The thickness of the aforementioned structure is 10 μm or more. The aforementioned complex fluoride mainly contains fluorine, the aforementioned alkali metal, and an additional metal. The alkali metal includes sodium, or sodium and potassium. The additional metal includes at least one metal selected from the group consisting of magnesium and aluminum. A structure that acts as an infrared transmission filter.
  4. The structure according to any one of claims 1 to 3, wherein the complex fluoride mainly comprises fluorine, the alkali metal, and aluminum.
  5. An infrared detection device comprising a structure, The aforementioned structure comprises a base material including a continuous polycrystalline phase of alkali metal-containing polyfluoride, The aforementioned structure contains 85% by mass or more of inorganic material, The structure contains 50% by mass or more of the polycrystalline compound of the polyfluoride, The porosity of the aforementioned structure is 30% or less. The median pore size of the aforementioned structure is 500 nm or less. The thickness of the aforementioned structure is 10 μm or more. The aforementioned complex fluoride mainly contains fluorine, the aforementioned alkali metal, and an additional metal. The alkali metal includes sodium, or sodium and potassium. An infrared detection device wherein the additional metal includes at least one metal selected from the group consisting of magnesium and aluminum.
  6. The infrared detection device according to claim 5, wherein the complex fluoride mainly comprises fluorine, the alkali metal, and aluminum.
  7. A light-emitting device comprising a structure, The aforementioned structure comprises a base material including a continuous polycrystalline phase of an alkali metal-containing polyfluoride, The aforementioned structure contains 85% by mass or more of inorganic material, The structure contains 50% by mass or more of the polycrystalline compound of the polyfluoride, The porosity of the aforementioned structure is 30% or less. The median pore size of the aforementioned structure is 500 nm or less. The thickness of the aforementioned structure is 10 μm or more. The aforementioned complex fluoride mainly contains fluorine, the aforementioned alkali metal, and an additional metal. The alkali metal includes sodium, or sodium and potassium. The light-emitting device wherein the additional metal includes at least one metal selected from the group consisting of magnesium and aluminum.
  8. The light-emitting device according to claim 7, wherein the complex fluoride mainly comprises fluorine, the alkali metal, and aluminum.

Description

This invention relates to a structure, an infrared detection device, a light-emitting device, and a method for manufacturing the structure. Conventionally, infrared-transmitting windows based on inorganic fluorides have been used for special applications in fields such as academic research and industry, such as window materials for scientific and chemical instruments. Patent Document 1 discloses a Fourier transform infrared spectrophotometer that measures fluorine-based gases in a sample containing corrosive gases, and includes a measuring cell whose cell window is composed of one selected from the group consisting of CaF₂ , BaF₂, MgF₂ , LiF, and ZnSe. International Publication No. 2019/176624 On the other hand, technologies for sensing various gases and flames using infrared detection elements and infrared-transmitting optical filters are known. However, alkali metal fluorides, as mentioned above, are highly hygroscopic and may not be suitable for general applications such as gas sensors and flame detection sensors. Furthermore, alkaline earth metal fluorides have high melting points of 1200 to 1500°C, and it may be impossible to manufacture structures with high infrared transmittance without using advanced technologies that require high temperatures of at least 1000°C or higher. This invention has been made in view of the problems of the prior art. The object of this invention is to provide a structure suitable for applications such as infrared-transmitting windows for gas sensors and flame detection sensors, and an infrared detection device using the same. Another object of this invention is to provide a method for manufacturing the above structure, which can be manufactured by a simple low-temperature process. To solve the above problems, a structure according to a first aspect of the present invention comprises a base material containing a continuous phase of polycrystalline polycrystalline polyfluoride containing an alkali metal. The structure contains 85% by mass or more of inorganic material, 50% by mass or more of polycrystalline polycrystalline polyfluoride, the porosity of the structure is 30% or less, the median pore diameter of the structure is 500 nm or less, and the thickness of the structure is 10 μm or more. An infrared detection device according to a second aspect of the present invention comprises a structure. A third aspect of the present invention provides a light-emitting device comprising a structure. A method for producing a structure according to a fourth aspect of the present invention includes the step of pressurizing and heating a raw material containing at least one of a primary fluoride containing an alkali metal, a secondary fluoride containing a metal other than an alkali metal, water, and a polyfluoride containing at least one of a hydroxyl group and a water molecule, under conditions of a pressure of 10 to 600 MPa and a temperature of 50 to 300°C. The structure contains 85% by mass or more of inorganic material, 50% by mass or more of polycrystalline polyfluoride, the porosity of the structure is 30% or less, the median pore diameter of the structure is 500 nm or less, and the thickness of the structure is 10 μm or more. Figure 1 is a schematic cross-sectional view showing an example of a structure according to this embodiment.Figure 2 is an enlarged cross-sectional view schematically showing another example of the structure according to this embodiment.Figure 3 is a schematic cross-sectional view showing an example of an infrared detection device according to this embodiment.Figure 4 is a schematic diagram showing an example of a light-emitting device according to this embodiment.Figure 5 shows a SEM image of the synthesized Na₃AlF₆powder observed at 10,000x magnification.Figure 6 shows a SEM image of the synthesized K₂NaAlF₂₆powder observed at 10,000x magnification.Figure 7 shows a SEM image of the synthesized NaMgF3 powder observed at a magnification of 10,000x.Figure 8 shows the XRD pattern of the powder of the test sample according to Example 1.Figure 9 shows the XRD pattern of the powder of the test sample according to Example 2.Figure 10 shows the XRD patterns of the raw material and test sample powders according to Example 3.Figure 11 shows the XRD patterns of the raw material and test sample powders according to Example 4.Figure 12 shows the XRD patterns of the raw material and test sample powders according to Example 5.Figure 13 is a secondary electron image of the cross-section of the CP processed (cross-section polishing) test sample according to Example 1, observed at a magnification of 10,000 times.Figure 14 is a backscattered electron image of the CP processed cross section of the test sample according to Example 1, observed at a magnification of 10,000 times.Figure 15 is a secondary electron image of the CP processed cross-section of the test sample according to Example 2, observed at a magnification of 10,000 times.Figure 16 is a backscattered electron imag